ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Material-dependent amorphization and epitaxial crystallization in ion-implanted AlAs/GaAs layer structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1211-1213 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: When AlAs/GaAs layer samples are subjected to Ar+ ion bombardment at liquid-nitrogen temperature, it is shown that very different damage structures are produced in the two materials. While the GaAs is relatively easily amorphized, the AlAs is quite resistant to damage accumulation and remains crystalline for the ion doses employed in these investigations. Epitaxial regrowth of buried amorphous GaAs layers of thicknesses up to 150 nm can be induced by rapid thermal annealing. It is demonstrated that differences in the initial damage state have a strong influence upon the nature of lattice defects produced by annealing.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101657
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Spatially resolved critical current limitations in YBa2Cu3O7 multilayer structures (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 918-920 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current flow in YBa2Cu3O7/PrBa2Cu3O7 multilayer structures has been studied using low temperature, scanning electron microscope, beam-induced voltage contrast. Specialized data acquisition has been used to limit thermalization effects and improve resolution. For both via hole contacts and crossovers, the lowest critical current densities were found at steps where the superconductor tracks climb up or down over patterned edges of the insulator.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110995
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Low-noise YBa2Cu3O7 -PrBa2Cu3O7 multiturn flux transformers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 366-368 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial thin-film YBa2Cu3O7 flux transformers with multiturn input coils have been constructed on 1 cm2 MgO substrates using PrBa2Cu3O7 as an insulator. By coupling these to high-temperature superconducting quantum interference devices (SQUIDs) using a flip-chip technology, several low-noise magnetometers and a gradiometer have been constructed. The yield of fully working flux transformers on 1 cm2 substrates exceeds 80%, and field sensitivities at 77 K of (520±30)fT/(square root of)Hz at 1 Hz and (165±8)fT/(square root of)Hz above 10 Hz have been achieved. No evidence for excess low-frequency noise above that of the uncoupled SQUID has been found in the flip-chip magnetometers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111149
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    The influence of ambient magnetic environments on high-Tc superconducting quantum interference device gradiometers (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 8783-8791 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The performance of high-temperature superconducting gradiometers have been evaluated in fields of up to 70 μT to determine their limitations in unshielded environments. The sensors incorporate first-order gradiometric superconducting quantum interference devices (SQUIDs) coupled to first-order gradiometric flux transformers. A gradiometer was operated successfully at all angles with respect to an ambient field with less than 20% variation in critical current and voltage/flux ratio. Magnetic hysteresis at 77 K was measured for field excursions up to 70 μT. The hysteresis factor, referred to the SQUID, averaged 10−3 Φ0/μT. Flux movement in the SQUID washers rather than the flux transformer was found to be the dominant cause of the hysteresis and the presence of the flux transformer reduced the hysteresis. This is interpreted as due to the coupling coil pinning the vortices against radial motion. The spectral noise density of the gradiometer was only weakly dependent on the orientation with respect to static fields of up to 70 μT except for narrow angular ranges where dominating random telegraph signal processes occurred. In contrast, field cooling the gradiometer above 15 μT was found to substantially increase the low-frequency noise. A gradiometer was successfully transported and operated out of doors with no shielding. Only a relatively minor degradation of performance was observed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362504
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Epitaxial NiSi layers on 〈111〉-oriented Si obtained by pulsed laser irradiation (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 861-866 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thermally grown NiSi layers on (111) Si substrates have been irradiated by 35-ns Nd laser pulses in the energy density range of 0.3–2.0 J/cm2. The duration of the laser-induced melt was monitored in situ by transient reflectivity measurements. Samples have been subsequently analyzed by Rutherford backscattering in combination with channeling and by transmission electron microscopy. It is shown that laser irradiation in a narrow energy density range results in the formation of a novel epitaxial NiSi phase on (111) Si. Electron microscopy studies show that this silicide phase could have a cubic symmetry with a lattice constant very similar to that of Si. This phase is, however, metastable and it transforms into the orthorhombic one upon thermal annealing at about 300 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343510
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    X-ray microanalysis of InGaAs/InP multilayer structures grown by metalorganic chemical vapor deposition (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 2293-2299 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray microanalysis in a scanning transmission electron microscope can be employed to determine concentration profiles with a spatial resolution of (approximately-less-than)2 nm across layer interfaces in III-V compound semiconductor multilayer structures. Here we describe its application to the InGaAs/InP multilayer system grown by metalorganic chemical vapor deposition at atmospheric pressure. The results show that even when the material is structurally perfect, there can be a significant As and Ga content beyond the boundaries of the InGaAs layers. Furthermore, the composition profiles can show a marked asymmetry relating to the growth direction. The results are consistent with previous imaging observations but provide quantitative information with high spatial resolution on individual element distributions. This combination of analytical attributes is not available using any other assessment technique.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342843
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Molecular-beam epitaxy of (100) InSb for CdTe/InSb device applications (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1526-1532 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interest in InSb and InSb-based heterostructures has recently been renewed in view of their important potential applications in infrared, logic, and novel quantum-well devices. Our work to date has concentrated on the growth of CdTe/InSb multilayer structures in which the properties of the InSb constituent layers have a very significant influence on subsequent device performance. The present paper describes data obtained during a systematic investigation of the growth, using molecular-beam epitaxy (MBE), of (100) InSb homoepitaxial layers, specifically for CdTe/InSb device applications. Modulated-beam mass spectrometry experiments have shown that polycrystalline InSb can be used as an MBE source of antimony, and the properties of InSb epilayers grown using either elemental antimony or polycrystalline InSb as the group-V source are compared. Cross-sectional transmission electron microscope analysis indicates that very high structural quality layers can be produced and has also identified the mechanisms which give rise to structural breakdown in layers grown under nonoptimum conditions. All unintentionally doped InSb layers grown to date have exhibited n-type conductivity (n(approximately-greater-than)3×1015 cm−3) and secondary ion mass spectrometry data has indicated the presence of tellurium, sulfur, and selenium contamination. The mechanisms by which tellurium and sulfur become incorporated in the grown layers are identified.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339936
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Ion beam crystallography of InGaAs epitaxial layers on InP substrates (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2639-2641 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first direct measurements of the strain in a series of In1−xGaxAs/InP structures by ion beam crystallography. A compression strain of 0.0152±0.0008 was obtained for an In0.47Ga0.53As epitaxial layer on an InP substrate compared with an expansion strain of 0.0126±0.0010 for an In0.58Ga0.42As layer structure. The method used allows quantitative strain measurements to be performed without the need for computer simulations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337087
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Growth of CdTe-InSb multilayer structures on (100) InSb substrates using molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1847-1849 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Molecular beam epitaxy has been used to grow multilayer structures of CdTe/InSb on (100)InSb substrates. To minimize interdiffusion effects, a particularly low growth temperature was used. This study presents the first transmission electron microscope and secondary-ion mass spectrometer investigations of this multilayer system. The work clearly demonstrates that the multilayers have high structural quality and that there is no large scale interdiffusion of the matrix elements. Roughening is observed at the "InSb grown on CdTe'' interface, although only relatively minor undulations are present at the inverted interface. A possible explanation for this effect is described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100373
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Narrow tracks in YBa2Cu3O7 thin films defined by laser ablation (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 75-77 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of cw laser ablation for defining narrow tracks in YBa2Cu3O7 thin films on (001) SrTiO3 substrates is described. Critical current densities have been observed up to 5×105 A/cm2 in 4-μm-wide tracks at 77 K. For these films, it is found that the value of critical current density calculated is insensitive to the length of track and the voltage criterion used.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101438
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...