ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
GaAs(111)A and (111)B static surface phase maps have been generated under a variety of substrate temperature and incident As4 flux conditions ranging from, respectively, 400–700 °C, and from 1×1014 to 1×1016 molecules cm−2 s−1. For the case of GaAs(111)A only a (2×2) reconstruction was observed. However, four GaAs(111)B surface reconstructions were identified below a critical As4 flux of JcAs4(approximately-equal-to)5×1015 molecules cm−2 s−1, viz.: (2×2); (1×1)LT; ((square root of)19×(square root of)19); and, (1×1)HT. Above JcAs4 the ((square root of)19×(square root of)19) surface phase was quenched, such that the (1×1)LT and (1×1)HT structures merged to form a single (1×1) phase. The transitions to and from each of these surface phases were found to be reversible, occurring at very specific substrate temperatures for a given incident As4 flux. The activation energies (εA) characterizing the reversible surface phase transitions were measured and compared with those on the GaAs(100) surface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.108682
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