Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
59 (1991), S. 3488-3489
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Current dopant diffusion theory is based on dopant-point-defect interaction, and assumes that the number of dopant-defect pairs is much smaller than the unpaired dopant concentration. In cases where a large number of excess defects are created from implantation damage, this may no longer be a valid assumption. A new derivation of the dopant and defect equations is presented which is valid for any concentration of dopant-defect pairs.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.105662
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