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  • 1
    Electronic Resource
    Electronic Resource
    Ion mass influence on transient enhanced diffusion and boron clustering in silicon: Deviation from the "+1" model (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 6182-6184 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron in silicon doping superlattices is used to trace native point defect behavior during a 790 °C, 15 min anneal following a 200 keV, 1×1013/cm2 Pb+ or 40 keV 1×1013/cm2 Si+ implant. These nonamorphizing implants lead to transient enhanced diffusion and clustering of the boron doping spikes. The enhancement in B diffusion scales sublinearly with mass of the ion implant. Clustering of the boron occurs deeper and more extensively in the Pb+-implanted sample due to greater mass of the ion. Measurement of the number of interstitials bound by extended defects after an 800 °C/10 s rapid thermal anneal confirm that the Pb+ implant has "+4.5" of the implant dose bound by extended defects, compared to "+0.6" in the Si+ implant for the same anneal. Both of these results indicate that the "+1" model is not valid for heavy mass ion implants. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367489
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  • 2
    Electronic Resource
    Electronic Resource
    Low resistivity TiSi2 on narrow p+ polycrystalline silicon lines (2002)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 259-261 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have achieved low resistivity TiSi2 on 0.25 μm wide polysilicon lines doped to 5×1020/cm3 with boron by use of in situ doping of polysilicon. By controlling the Si deposition such that an amorphous undoped "cap" was deposited on p+ polycrystalline Si (polysilicon) subsequently formed TiSi2 wires had a lower resistivity consistent with C54 phase formation, while maintaining direct contact between TiSi2 and p+ Si. When TiSi2 was formed directly on p+ polysilicon, it had increasing resistivity as the linewidth decreased below 0.5 μm. The mechanism for lower resistivity TiSi2 is attributed to an increased density of C49-to-C54 phase transformation sites when the silicide is formed on amorphous undoped silicon. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1492010
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  • 3
    Electronic Resource
    Electronic Resource
    Boron-enhanced diffusion of boron from ultralow-energy ion implantation (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2435-2437 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the diffusion enhancement mechanism of boron-enhanced diffusion (BED), wherein boron diffusivity is enhanced four to five times over the equilibrium diffusivity at 1050 °C in the proximity of a silicon layer containing a high boron concentration. It is demonstrated that BED is driven by excess interstitials injected from the high boron concentration layer during annealing. For evaporated layers, BED is observed above a threshold boron concentration between 1% and 10%, though it appears to be closer to 1% for B-implanted layers. For sub-keV B implants above the threshold, BED dominates over the contribution from transient-enhanced diffusion to junction depth. For 0.5 keV B, this threshold implantation dose lies between 3×1014 and 1×1015 cm−2. It is proposed that the excess interstitials responsible for BED are produced during the formation of a silicon boride phase in the high B concentration layers. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123872
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  • 4
    Electronic Resource
    Electronic Resource
    Capture of vacancies by extrinsic dislocation loops in silicon (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 67-69 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The capture of a flux of vacancies in Si by a band of extrinsic dislocation loops has been observed in Sb doping superlattices. Annealing Sb doping superlattices containing a band of dislocation loops in NH3 results in an injection of vacancies, which enhances the diffusion of Sb spikes located between the surface and loop band. By extracting the diffusivity in the Sb spikes on either side of the loop band, we conclude that over 90% of the injected vacancies are captured by the loops. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120646
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  • 5
    Electronic Resource
    Electronic Resource
    Native point defects in Si with a CoSi2 film: Single crystal versus polycrystalline (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 2289-2291 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have determined the native point defects concentrations in silicon with single and polycrystalline CoSi2 films by annealing Sb and B doping superlattices at 850 °C/60 min in N2. The polycrystalline film results in enhanced Sb diffusion in Si, indicating a vacancy supersaturation (CV/CV*)∼2.4±0.8, while the single crystal film maintains a vacancy concentration near equilibrium. Boron diffusion is retarded by the same amount by both films, indicating an interstitial undersaturation (CI/CI*∼0.3±0.1). This directly implies that CoSi2 grain boundaries are the cause of the higher vacancy supersaturation that is well known to occur during standard Co silicidation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121275
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  • 6
    Electronic Resource
    Electronic Resource
    Point defects in Si after formation of a TiSi2 film: Evidence for vacancy supersaturation and interstitial depletion (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 1687-1689 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The influence of TiSi2 formation on native Si point defects has been studied at temperatures between 800 and 890 °C. Sb and B in doping superlattices were employed to trace point defect behavior. Formation of TiSi2 at 890 °C gives rise to an interface root-mean-square (rms) roughness of 22 nm. Ambiguities in the interpretation of the data arising from possible secondary ion mass spectroscopy artifacts due to sputtering through such a rough interface were avoided by etching the TiSi2 film and replanarizing the Si surface. A rms roughness of 0.05 nm was obtained, as checked by atomic force microscopy and cross-sectional transmission electron microscopy. We observed an enhancement in Sb diffusion and retardation of B diffusion over control samples without TiSi2. This indicates a vacancy supersaturation and an interstitial depletion in the Si due to the presence of the silicide. Possible mechanisms of vacancy creation and interstitial depletion are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115906
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  • 7
    Electronic Resource
    Electronic Resource
    Investigation of mechanisms of vacancy generation in silicon in the presence of a TiSi2 film (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 583-588 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have determined the perturbance in the silicon vacancy concentration induced by the presence of TiSi2 films. Antimony in silicon doping superlattices was employed as a vacancy detector. Under all conditions studied (deposited titanium thickness 4–312 nm, 800–850 °C, 15–600 min), we always observe a relative vacancy supersaturation on the order of 1.5. Two mechanisms of vacancy injection during titanium silicidation were studied: (1) stress compensation; by varying the thickness of the deposited films and annealing for 60 min at 850 °C, a range of stresses was induced in the substrate via the coefficient of thermal expansion mismatch between the film and substrate. The observed vacancy supersaturation was independent of film thickness, indicating that stress compensation is not a mechanism of vacancy generation for titanium disilicide; (2) volume contraction; annealing for 15, 60, and 600 min at 800 °C after identical 30-nm-thick titanium films were deposited allowed the time variation of the vacancy supersaturation to be studied. While the vacancy supersaturation decayed slightly with time, its time dependence is incompatible with a large "pulse" of vacancies injected during the silicidation reaction. This indicates that volume contraction at the growing film interface is not a mechanism for vacancy generation. The thicker TiSi2 films (〉22 nm) and those annealed for ≤60 min were continuous in their coverage of the substrate as observed by transmission electron microscopy, while the thinner films and those annealed for longer times had islanded. However, there was no relationship between film coverage and vacancy behavior in the substrate, or was there any relation between deposition method (evaporation versus sputtering) and vacancy behavior. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365619
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  • 8
    Electronic Resource
    Electronic Resource
    Extrinsic dislocation loop behavior in silicon with a thermally grown silicon nitride film (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 7175-7180 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of a thermally grown silicon nitride (SiNx) film on end-of-range extrinsic dislocation loops in a silicon substrate was investigated by transmission electron microscopy. A layer of extrinsic dislocation loops was formed by annealing a Si wafer amorphized by a Ge+ ion implant. A nitride film was grown on the Si by further annealing in ammonia (NH3) at 810 and 910 °C for 30–180 min. Wafers with a loop layer were also annealed in argon (Ar) at the same conditions as the NH3-annealed wafers to determine loop behavior in an inert environment. Samples annealed in NH3 had a significant decrease in the net number of interstitials bound by the loops, while those annealed in Ar showed no change. The results are explained by a supersaturation of vacancies caused by the presence of the nitride film, resulting in loop dissolution. By integrating the measured vacancy flux over the distance from the nitride/Si interface to the loop layer, we extract an estimate for the relative supersaturation of vacancies at 910 °C, CV/CV*∼4, where CV is the concentration of vacancies and the asterisk denotes equilibrium. We rule out interstitial undersaturation-induced loop dissolution based on loop stability with temperature and oxidation-enhanced loop growth calculations. A comparison with estimated CV/CV* values from a previous report using the same processing equipment and parameters but monitoring the change in Sb diffusivity with nitridation shows excellent agreement. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.365316
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  • 9
    Electronic Resource
    Electronic Resource
    The influence of TiSi2 and CoSi2 growth on Si native point defects: The role of the diffusing species (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 68 (1996), S. 2870-2872 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron- and Sb-doped superlattice samples have been used to investigate intrinsic point defects in Si after formation of TiSi2 and CoSi2 films from codeposited metal and Si. The as-deposited films had the compositions Ti, TiSi0.8, TiSi2.2, and CoSi0.8. After annealing in argon for 1 h at 850 °C, the films formed TiSi2 and CoSi2, respectively. All samples showed the same slight interstitial undersaturation and vacancy supersaturation. Since TiSi2 and all its precursor phases form completely by Si diffusion and the CoSi+Si→CoSi2 transformation occurs by Co diffusion, this indicates that the diffusing species during film growth is not the determining factor in the point defect perturbance in the Si substrate. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116352
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  • 10
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    Effect of surface proximity on end-of-range loop dissolution in silicon (1999)
    American Institute of Physics
    Details
    Publication Date: 1999-03-15
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
    Published by American Institute of Physics
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