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  • 1
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 178 (1956), S. 798-799 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] The volume of nerve in the lateral rectus was calculated to be approximately 9 per cent. Four main types of ending were observed in the muscle : (1) motor end-plates, found most abundantly in the posterior and middle thirds ; (2) muscle spindles of standard type, anteriorly placed and deep to the ...
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  • 2
    Electronic Resource
    Electronic Resource
    [s.l.] : Nature Publishing Group
    Nature 165 (1950), S. 978-978 
    ISSN: 1476-4687
    Source: Nature Archives 1869 - 2009
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
    Notes: [Auszug] This findingso interesting in the general morphology of the nerves of special sensehas caused us to re-examine the nerve supply of the circumvallate papillae in other animals, and we find, particularly in the calf and dog, a similar but much more diffuse arrangement. It is hoped to publish details ...
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 828-831 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The extended defects in laser activated and subsequently thermally annealed high concentration arsenic layers have been investigated in a range of surface concentrations from 2.3×1020 to 1.9×1021 As/cm3 with transmission electron microscopy. We observe a rapid change in the density of dislocation loops with dose which is indicative of a homogeneous nucleation mechanism. The number of atoms bound by the defects is insufficient to account directly for all of the inactive arsenic. The defects lie uniformly inside the As layer up to the junction depth, which suggests that As inactive complexes are aiding the loop formation. Our results support the proposition that arsenic deactivation injects silicon interstitials. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2298-2302 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A boron doped epilayer was used to investigate the interaction between end of range dislocation loops (formed from Ge+ implantation) and excess point defects generated from a low dose 1014/cm2 B+ implant into silicon. The boron doping spike was grown in by chemical vapor deposition at a depth of 8000 A(ring) below the surface. The intrinsic diffusivity of the boron in the doped epilayer was determined by simply annealing the as-grown layer. The end of range (type II) dislocation loops were created using two overlapping room-temperature Ge+ implants of 75 and 190 keV each at a dose of 1×1015/cm2. Upon annealing the amorphous layer regrew and a layer of type II dislocation loops formed ∼2300 A(ring) deep at a density of ∼8×1010/cm2. The enhancement in the buried boron layer diffusivity due to the type II loop forming Ge+ implant was observed to increase approximately between 2.5 and 5 min from 1500× to a value 2500× above the intrinsic diffusivity before dropping back to intrinsic levels after 30 min at 800 °C. A low-energy (8 keV) 1×1014/cm2 B+ (Rp=320 A(ring)) implant into material without loops resulted in an average enhancement of 1540× in boron epilayer diffusivity after 2.5 min at 800 °C. The enhancement dropped down to intrinsic diffusivity levels after 5 min at 800 °C. When a layer of loops was introduced and annealed prior to and deeper than a subsequent low-energy B+ implant, annealing of the B+ implant produced no measurable enhancement in the buried B layer diffusivity. Taken together this imples that the interaction kinetics between the dislocation loop layer and the damage induced interstitials are primarily diffusion limited and the loops are absorbing a significant fraction of the interstitials produced by the low-energy B+ implant. © 1995 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 955-960 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Short-time/low-temperature thermal oxidation is known to lead to point defect perturbations in silicon. This study investigates the interaction between oxidation-induced point defects and type II dislocation loops intentionally introduced in silicon via ion implantation. The type II (end-of-range) dislocation loops were introduced via implantation of either Si+ ions at 50 keV or Ge+ ions at 100 keV into 〈100(approximately-greater-than)Si wafers at doses ranging from 2×1015 to 1×1016/cm2. Furnace anneals were done at 900 °C for times between 30 min and 4 h in both a dry oxygen and nitrogen ambient. The change in atom concentration bound by dislocation loops as a result of oxidation was measured by plan-view transmission electron microscopy. The results show type II dislocation loops can be used as point defect detectors. When Ge+ implantation was used to form the dislocation loops, a decrease in trapped atom concentration relative to the control was observed upon oxidation. These results imply that oxidation of high dose Ge+ implanted silicon results either in vacancy injection or provides an excellent sink for interstitials. It is also shown that when Si+ implantation is used to form the dislocation loops, the measured net interstitial flux trapped by dislocation loops is linearly proportional to the total supersaturation of interstitials determined by oxidation-enhanced diffusion studies done by Packan and Plummer [J. Appl. Phys. 68, 4327 (1990)].
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 3555-3560 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interstitials can recombine at an oxide/silicon interface. Previous experimental work produces contradictory results. Transient enhanced diffusion experiments suggest a nearly infinite surface recombination rate, while oxidation enhanced diffusion suggests a much weaker recombination rate. A di-interstitial mechanism is investigated, and analytic solutions are developed. This is compared to the more commonly used interstitial mechanism. The di-interstitial mechanism can account for most of the discrepancy in the data. © 1998 American Institute of Physics.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 2038-2040 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron-doped well structures formed in Czochralski silicon are subjected to a self-implant and various anneals to form a population of type {311} defects. Quantitative transmission electron microscopy is then used to measure the residual interstitials trapped in the {311} defects as a function of boron concentration and anneal temperature. We have found a strong tendency for increased dissolution rates of {311} type defects at boron concentrations above 1018 cm−3, providing direct evidence for the formation of boron–interstitial clusters. By profiling the samples with secondary ion mass steptroscopy and comparing the results to spreading resistance measurements the degree of deactivation can be determined. © 1999 American Institute of Physics.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 700-702 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interactions between end-of-range dislocation loops and {311} defects as a function of their proximity were studied. The dislocation loops were introduced at 2600 Å by a dual 1×1015 cm−2, 30 keV and a 1×1015 cm−2, 120 keV Si+ implantation into silicon followed by an anneal at 850 °C for 30 min. The depth of the loop layer from the surface was varied from 2600 to 1800 Å and 1000 Å by polishing off the Si surface using a chemical–mechanical polishing (CMP) technique. A post-CMP 1×1014 cm−2, 40 keV Si+ implantation was used to create point defects at the projected range of 580 Å. The wafers were annealed at 700, 800, and 900 °C, and plan-view transmission electron microscopy study was performed. It was found that the number of interstitials in {311} defects decreased as the projected range damage was brought closer to the loop layer, while the number of rectangular elongated defects (REDs) increased. Experimental investigation showed that REDs are formed at the end of range. It is concluded that the interstitials introduced at the projected range are trapped at the end of range. The REDs are formed due to the interactions between the interstitials and the pre-existing dislocation loops. © 1999 American Institute of Physics.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3844-3846 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Amorphization of a n-type Czochralski wafer was achieved using a series of Si+ implants of 30 and 120 keV, each at a dose of 1×1015 cm2. The Si+ implants produced a 2400 Å deep amorphous layer, which was then implanted with 4 keV 1×1014/cm2 B+. Postimplantation anneals were performed in a tube furnace at 750 °C, for times ranging from 15 min to 6 h. Secondary ion mass spectrometry was used to monitor the dopant diffusion after annealing. Transmission electron microscopy (TEM) was used to study the EOR defect evolution. Upon annealing, the boron peak showed no clustering, and TED was observed in the entire boron profile. TEM results show that both {311} defects and dislocation loops were present in the EOR damage region. The majority of the {311} defects dissolved in the interval between 15 min and 2 h. Results indicate that {311} defects release interstitials during the time that boron exhibits TED. These results show that there is a strong correlation between {311} dissolution in the EOR and TED in the regrown silicon layer. Quantitative TEM of dislocation loop growth and {311} dissolution indicates that in addition to {311} defects, submicroscopic sources of interstitials may also exist in the EOR which may contribute to TED. © 1999 American Institute of Physics.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1591-1593 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of surface proximity on the dissolution of end-of-range dislocation loops in silicon was investigated by transmission electron microscopy (TEM). A layer of dislocation loops was formed at a depth of 2600 Å by annealing a Si wafer amorphized by a 1015 cm−2, 120 keV, and a 1015 cm−2, 30 keV dual Si+ implant for 30 min at 850 °C. The wafer was diced into 1 cm×1 cm pieces and polished by a chemical–mechanical polishing technique to decrease the loop depth to 1800 and 1000 Å. The samples were then furnace annealed at 900 and 1000 °C in N2 gas. Quantitative TEM analysis revealed that the density of small loops decreases as the loop band is brought closer to the surface. The flux of interstitials to the surface varied inversely with loop depth, indicating that the loop dissolution is diffusion limited. Assuming that the loops maintain a supersaturation of interstitials (CIL) around them, and by integrating the measured interstitial flux from the loop layer to the surface, the relative supersaturation of interstitials near the loop layer (CIL/CI*) was extracted 900 and 1000 °C. © 1999 American Institute of Physics.
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