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  • 11
    Electronic Resource
    Electronic Resource
    Equivalent-time sampling force microscopy using pulse position modulation method (2002)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 73 (2002), S. 323-329 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This paper presents a homodyne pulse-sampling electrostatic force microscopy technique using a pulse position modulation method for the noncontact measurement of internal voltage waveforms in integrated circuits. The measurement system operates by monitoring the mechanical deflection of a micromachined probe as it responds to electric forces induced by the circuit voltage waveform. Although the mechanical response of typical probes used in such systems is limited to few kHz, measurement of high frequency repetitive waveforms is enabled by applying a high speed sampling pulse signal to the probe with the pulse position modulated at a rate below the probe mechanical resonance. This results in down conversion of the circuit induced electric force harmonics to within the probe mechanical response, thus allowing the measurement of high frequency signals. The proposed technique is modeled using Fourier analysis of the measurement system response, and is demonstrated by the measurement of a 0.8 Mbit/s digital pattern on a CMOS test pad. The performance of the measurement system is analyzed based on obtained measurements and simulated system response. An analysis of the method capabilities shows a measurement sensitivity of 13 mVrms/(square root of)Hz. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1430549
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  • 12
    Electronic Resource
    Electronic Resource
    Spin-glass behavior of cubic Tb0.3Y0.7Ag: A scaling of the thermoremanence (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 4340-4342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnetization-versus-temperature (M-vs-T) measurements in a fixed field on cubic pseudobinary Tb0.3Y0.7Ag show that M for increasing and then decreasing T bifurcates at the antiferromagnetic Néel point (TN=36 K), where M is maximum. The resulting thermoremanence (MR), which decays very slowly with time, diminishes with increasing T and vanishes at TN. Thus, the long-range antiferromagnetism appears to coexist with spin-glass ordering. Measurements of MR with increasing T were also made for different cooling fields (Hc1) The changes of MR with Hcl and T are found to reduce to a universal relationship between the temperature-normalized quantities, m=MR/M0(T) and h=Hcl /H0(T). Setting both the initial slope of m vs h and the saturation m at high h equal to unity, we determine that M0(T)=M0(0) exp (−T/T0), with M0(0)=0.82μB/Tb atom and T0=4.3 K, and that H0(T) varies analogously, with H0(0)=225 kOe and the same T0. A similar temperature scaling of MR vs Hcl , with similar exponential forms for M0(T) and H0(T), has been deduced earlier for Ag-Mn and other canonical spin glasses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340194
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  • 13
    Electronic Resource
    Electronic Resource
    Observation of a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1024-1026 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells with Shubnikov–de Haas measurements. The saturated reduction of the electron density in the InAs well was about 10%. The electron effective mass was found to be (0.048±0.004) m0 for an electron density of 18.0×1011 cm−2. The electron quantum lifetime decreased as the electron density was reduced by the negative persistent photoconductivity effect due to electron-hole interaction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112141
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  • 14
    Electronic Resource
    Electronic Resource
    Scanned electrostatic force microscope for noninvasive high frequency potential measurement (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1442-1444 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter presents a technique for performing localized noncontact measurements of high frequency signals on integrated circuits using a scanned force microscope. The technique extracts the amplitude and phase of the signal voltage at a point on the circuit by nulling the electrostatic force interaction between a small driven probe and the test point. A heterodyne approach is used to enable the measurement of high frequency signals, including frequencies which are much greater than the mechanical resonance of the probe mechanism. Accurate measurements can be performed without complex calibration requirements and are not sensitive to dc offset effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111910
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  • 15
    Electronic Resource
    Electronic Resource
    Femtosecond time-resolved refractive index changes in CdS0.75Se0.25 and CdS (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1878-1880 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A pump-probe, light by light deflection technique employing 120 fs pulses at λ=620 nm has been used to measure the temporal and irradiance (I) dependence of the refractive index (n) in 100-μm-thick single crystals of CdS0.75Se0.25 and CdS at 295 K. For I〈3 GW/cm2 only instantaneous negative changes in n are observed and are attributed to Stark and two-photon resonance effects while for higher I negative changes with onset times of approximately 2 ps are attributed to the cooling of two-photon generated carriers. For I(approximately-greater-than)30 GW/cm2 a partial recovery of n occurs within 10 ps and is attributed to possible threshold dependent recombination processes. The variation of probe-beam deflection with pump irradiance has been determined for different probe delays and related to two photon absorption of the pump beam.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106175
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  • 16
    Electronic Resource
    Electronic Resource
    High-efficiency and high-resolution fiber-optic probes for near field imaging and spectroscopy (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 2886-2888 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate that fiber-optic probes with an intermediate section followed by a rapidly tapering tip lead to transmission efficiency enhancement of better than four orders-of-magnitude at 60 nm tip diameter and more than five orders-of-magnitude at smaller than 40 nm tip diameter over typical taffy-pulled fiber probes. Our highest resolution probes have a tip diameter of 30 nm with a transmission efficiency of 0.02%, and as an example we image tobacco mosaic virus with a resolution better than 35 nm. The probes are made in a two-step process involving pulling and then etching that permits both high efficiency and control of the mechanical resonance properties. The efficiency is enhanced by reducing the distance that the electromagnetic mode travels in the cut-off mode of the fiber probe. The higher resolution is achieved because sharper tips can be made through the etching process. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120206
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  • 17
    Electronic Resource
    Electronic Resource
    A simple velocity model for low-pressure metalorganic chemical vapor deposition (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 869-871 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new simple transport model is used to describe the dependence of the electrical characteristics of the epitaxial layer on the growth parameters in low-pressure metalorganic chemical vapor deposition. The important parameters of this model are the mean velocity of the gases and the [V]/[III] ratio. Undoped GaAs epitaxial layers are prepared at various operating pressures. A semi-empirical correlation relating the reactor pressure and flow rate is established that dictates the operating conditions for a single set of film properties. This enables growth of a material with constant characteristics while pressure can be varied. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115532
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  • 18
    Electronic Resource
    Electronic Resource
    Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 171-173 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Persistent photoconductivity has been observed at low temperatures in thin, unintentionally doped GaInP/GaAs/GaInP quantum wells. The two-dimensional electron gas was studied by low field Hall and Shubnikov–de Haas effects. After illumination with red light, the electron concentration increased from low 1011 cm−2 to more than 7×1011 cm−2 resulting in an enhancement of both the carrier mobility and the quantum lifetime. The persistent photocarriers cannot be produced by DX-like defects since the shallow dopant concentration in the GaInP layers is too low to produce the observed concentration. We suggest that the persistent carriers are produced by photoionization of deep intrinsic donors in the GaInP barrier layer. We also report observation of a parallel conduction path in GaInP induced by extended illumination. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113553
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  • 19
    Electronic Resource
    Electronic Resource
    Se chemical passivation and annealing treatment for GaAs Schottky diode (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2125-2127 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A Se chemical passivation [(NH4)2S+Se] for GaAs Schottky diodes is presented. We have found that our (NH4)2S+Se passivated Schottky diodes have more than one order of magnitude higher forward current density than the (NH4)2Sx passivated ones. In rapid thermal annealing treatment, an initial decrease and then increase of forward current density for (NH4)2Sx passivated diodes is observed. For the (NH4)2S+Se and (NH4)OH treated diodes, a steady decrease of Schottky barrier height with increased annealing temperature is observed. With or without annealing treatment, the (NH4)2S+Se passivated diodes have the lowest barrier height. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.113924
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  • 20
    Electronic Resource
    Electronic Resource
    Interface roughness scattering in thin, undoped GaInP/GaAs quantum wells (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1578-1580 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electronic transport properties of very thin undoped GaInP/GaAs quantum wells have been measured by temperature dependent low field Hall effect and by Shubnikov–de Haas effect. Strong Shubnikov–de Haas oscillations were observed after increasing the electron concentration via the persistent photocurrent effect. Low temperature mobilities of up to 70 000 cm2/V s at carrier concentrations of 6.5×1011 cm−2 were observed in a 20 A(ring) quantum well. The results are compared with the theory of interface roughness scattering which indicates extremely smooth interfaces; however, discrepancies between experiment and theory are observed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112920
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