Persistent photoconductivity has been observed at low temperatures in thin, unintentionally doped GaInP/GaAs/GaInP quantum wells. The two‐dimensional electron gas was studied by low field Hall and Shubnikov–de Haas effects. After illumination with red light, the electron concentration increased from low 1011 cm−2 to more than 7×1011 cm−2 resulting in an enhancement of both the carrier mobility and the quantum lifetime. The persistent photocarriers cannot be produced by DX‐like defects since the shallow dopant concentration in the GaInP layers is too low to produce the observed concentration. We suggest that the persistent carriers are produced by photoionization of deep intrinsic donors in the GaInP barrier layer. We also report observation of a parallel conduction path in GaInP induced by extended illumination.
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9 January 1995
Research Article|
January 09 1995
Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells
Said Elhamri;
Said Elhamri
Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221‐0011
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M. Ahoujja;
M. Ahoujja
Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221‐0011
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K. Ravindran;
K. Ravindran
Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221‐0011
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D. B. Mast;
D. B. Mast
Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221‐0011
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R. S. Newrock;
R. S. Newrock
Department of Physics, University of Cincinnati, Cincinnati, Ohio 45221‐0011
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W. C. Mitchel;
W. C. Mitchel
Wright Laboratory, Materials Directorate, Wright‐Patterson Air Force Base, Ohio 45433‐7707
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G. J. Brown;
G. J. Brown
Wright Laboratory, Materials Directorate, Wright‐Patterson Air Force Base, Ohio 45433‐7707
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Ikai Lo;
Ikai Lo
Wright Laboratory, Materials Directorate, Wright‐Patterson Air Force Base, Ohio 45433‐7707
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Manijeh Razeghi;
Manijeh Razeghi
Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208
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Xiaguang He
Xiaguang He
Center for Quantum Devices, Department of Electrical Engineering and Computer Science, Northwestern University, Evanston, Illinois 60208
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Appl. Phys. Lett. 66, 171–173 (1995)
Article history
Received:
September 14 1994
Accepted:
November 04 1994
Citation
Said Elhamri, M. Ahoujja, K. Ravindran, D. B. Mast, R. S. Newrock, W. C. Mitchel, G. J. Brown, Ikai Lo, Manijeh Razeghi, Xiaguang He; Persistent photoconductivity in thin undoped GaInP/GaAs quantum wells. Appl. Phys. Lett. 9 January 1995; 66 (2): 171–173. https://doi.org/10.1063/1.113553
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