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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3377-3384 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the effects of annealing temperature on phosphorus-implanted silicon films is carried out. Fourier transform infrared spectroscopy has been performed with two different instruments in the spectral ranges of 0.75–4 μm and 3–25 μm. In the first spectrum range special attention was given to the influence of implantation dose on reflectivity. The minimum reflectivity associated with plasma resonance has been fully employed for estimation of the electrical activation of implanted impurities. Other conclusions concerning the activation of free carriers (implanted impurities) with implantation dose and annealing temperature have been reached.
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  • 2
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8032-8038 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman and electrical characterization measurements are performed in order to study the effects of thermal annealing on phosphorus implanted silicon wafers. The silicon layers were implanted for various implantation energies and doses, below, and over the critical dose of amorphization. The post-implanted period was followed by thermal isochronal annealing at various temperatures. Special attention has been given to the amorphous/crystal transition occurring at various annealing temperatures. A bi layer model [R. Loudon, J. Phys. (Paris) 26, 677 (1965)] has been used for a quantitative determination of the annealing temperature at which a complete annihilation of implantation defects takes place. For this analysis, Raman spectra, resistivity depth profiles, as well as 1D-SUPREM III simulation were used.
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  • 3
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: For this cubic pseudobinary compound, the bifurcation of the magnetization (M) vs temperature for warming and cooling in low fields (after zero-field cooling) indicates a spin-glass freezing point (Tg) of ∼20 K. Isotherms of M vs cooling field show zero spontaneous moments down to 4.2 K but an initial susceptibility that almost diverges below Tg〈sbxs〉. From rotational measurements of M as a vector in a fixed field (H) at 4.2 K, the anisotropy field produced by field cooling (HK) is found to turn rigidly with the sample for H below ∼1 kOe. At higher H, HK rotates up to some angle relative to H and then stays fixed as the sample continues to turn, thus exhibiting a frictional rotation relative to the sample. Nevertheless, HK remains sizeable in magnitude (∼12 kOe). Comparisons are made with analogous results for isostructural (Tb, Y) Ag, where spin-glass order coexists with antiferromagnetism, as well as for various prototypal spin-glass alloys.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5261-5261 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: As nonmagnetic yttrium is substituted for terbium, TbAg changes from a conventional antiferromagnet into a complex magnetic system with components of both commensurate and incommensurate spin structures and bulk magnetic properties typical of spin-glass behavior for x≤0.5. We have carried out neutron diffraction experiments on polycrystalline samples with x=0.15, 0.5, and 1.0 to complement our earlier studies for x=0.3.1 For x=0.5, the system orders at T≈58 K into the mixed structure observed for x=0.3, but with a much sharper (1/2 1/2 0) peak. On cooling below 40 K the incommensurate peaks almost disappear, remaining only as low-intensity shoulders of the commensurate peak at the lowest temperature measured (T=4 K). Hysteresis is observed in the relative intensity of the two components of the structure between 45 and 55 K. For x=0.15, the system orders at T≈18 K into the two-component structure, but with an approximately constant intensity ratio and no evidence of hysteresis, similar to the behavior found for x=0.3. Thus, as the Tb concentration decreases, the relative stability of the commensurate and incommensurate structures appears to change. This balance between competing magnetic structures will be related to the spin-glass properties observed in this system.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 5961-5963 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This cubic pseudobinary compound with antiferromagnetic order and spin-glass properties below Tg (36 K) was studied by magnetization-vector measurements on a field-cooled (FC) polycrystalline sample disk rotated in various fixed fields (H). At 4.2 K, the FC-induced anisotropy field HK is seen to turn rigidly with the sample for all rotation angles (θ≤180°) even at H=15 kOe, and since the rotational magnetization follows HK very closely, it is deduced that HK 〉100 kOe. At 20 K, HK turns rigidly, but only below a threshold field, above which HK rotates up to some critical angle relative to H, where it remains as the sample continues to turn. Thus HK rotates frictionally relative to the sample. Nevertheless, it is found that its magnitude continues to exceed 100 kOe.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 61-68 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effects of high-dose silicon and arsenic ion implantation on the electrical and structural properties of silicon layers are investigated. Combining electrical, transmission electron microscopy, and triple-crystal x-ray-diffraction measurements made it possible to characterize the effects of thermal annealing both on defect annihilation mechanisms and on electrical doping activation. It is clearly shown that a low-temperature (≤450 °C) electrical activation process is taking place in the amorphous surface layer induced by high-dose ion implantation. This phenomenon is found to be completely independent of the recrystallization regrowth by solid phase epitaxy which occurs at higher temperature. This electrical activation process is found to be well described by a local relaxation model involving point defect migration.
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 65 (1994), S. 3378-3381 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A high-resolution noncontact scanned probe technique has been developed for sampling the internal signals of an operating integrated circuit. The signal waveform is extracted by sensing the localized electrostatic force between a small probe and point on the circuit being measured. A heterodyne approach is used to enable the sampled measurement of high-frequency digital or analog waveforms. In conjunction with a nulling method, the technique is capable of accurate signal measurement without complex calibration or probe positioning, and can be performed over passivated structures. Measurement of digital and analog signals is demonstrated with a voltage accuracy of less than 100 mV.
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 1024-1026 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed a negative persistent photoconductivity effect in In0.25Ga0.75Sb/InAs quantum wells with Shubnikov–de Haas measurements. The saturated reduction of the electron density in the InAs well was about 10%. The electron effective mass was found to be (0.048±0.004) m0 for an electron density of 18.0×1011 cm−2. The electron quantum lifetime decreased as the electron density was reduced by the negative persistent photoconductivity effect due to electron-hole interaction.
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1442-1444 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This letter presents a technique for performing localized noncontact measurements of high frequency signals on integrated circuits using a scanned force microscope. The technique extracts the amplitude and phase of the signal voltage at a point on the circuit by nulling the electrostatic force interaction between a small driven probe and the test point. A heterodyne approach is used to enable the measurement of high frequency signals, including frequencies which are much greater than the mechanical resonance of the probe mechanism. Accurate measurements can be performed without complex calibration requirements and are not sensitive to dc offset effects.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1878-1880 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A pump-probe, light by light deflection technique employing 120 fs pulses at λ=620 nm has been used to measure the temporal and irradiance (I) dependence of the refractive index (n) in 100-μm-thick single crystals of CdS0.75Se0.25 and CdS at 295 K. For I〈3 GW/cm2 only instantaneous negative changes in n are observed and are attributed to Stark and two-photon resonance effects while for higher I negative changes with onset times of approximately 2 ps are attributed to the cooling of two-photon generated carriers. For I(approximately-greater-than)30 GW/cm2 a partial recovery of n occurs within 10 ps and is attributed to possible threshold dependent recombination processes. The variation of probe-beam deflection with pump irradiance has been determined for different probe delays and related to two photon absorption of the pump beam.
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