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  • 1
    Monograph available for loan
    Monograph available for loan
    Boston [u.a.] : Artech House
    Call number: M 00.0085
    Type of Medium: Monograph available for loan
    Pages: xiv, 422 S.
    ISBN: 0890063443
    Classification:
    Engineering
    Location: Upper compact magazine
    Branch Library: GFZ Library
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 856-858 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, the spatial dependence of the carrier recombination centers induced in phosphorus-implanted and annealed silicon wafers have been examined. Ultrafast time-resolved reflectivity measurements of a set of phosphorus-implanted annealed silicon wafers (1016 P+/cm2) as a function of position on the wafer have been carried out, and an x–y map of the carrier lifetime for each of the samples has been obtained. Measurements reveal distinct features of the distribution of carrier recombination centers for the nonannealed and annealed samples between 350 °C and 1100 °C in an area of 36×36 μm2 with resolution better than 3 μm. The presence of islands of clusters in ion-implanted and annealed samples is also discussed in this letter. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 796-800 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature photoluminescence measurements are performed in order to study the effect of thermal annealing on phosphorus implanted silicon wafers. Measurements are carried out at near band gap excitation with a Nd:YAG laser operating at 1.06 μm. Photoluminescence measurements are also carried out with 0.488 μm laser excitation. It was found that implantation conditions (dose and energy) and annealing temperature strongly influence the intensity of the photoluminescence signal. Contribution from the bulk silicon and the effects from the ion implantation to the photoluminescence signal are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3377-3384 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the effects of annealing temperature on phosphorus-implanted silicon films is carried out. Fourier transform infrared spectroscopy has been performed with two different instruments in the spectral ranges of 0.75–4 μm and 3–25 μm. In the first spectrum range special attention was given to the influence of implantation dose on reflectivity. The minimum reflectivity associated with plasma resonance has been fully employed for estimation of the electrical activation of implanted impurities. Other conclusions concerning the activation of free carriers (implanted impurities) with implantation dose and annealing temperature have been reached.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8032-8038 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman and electrical characterization measurements are performed in order to study the effects of thermal annealing on phosphorus implanted silicon wafers. The silicon layers were implanted for various implantation energies and doses, below, and over the critical dose of amorphization. The post-implanted period was followed by thermal isochronal annealing at various temperatures. Special attention has been given to the amorphous/crystal transition occurring at various annealing temperatures. A bi layer model [R. Loudon, J. Phys. (Paris) 26, 677 (1965)] has been used for a quantitative determination of the annealing temperature at which a complete annihilation of implantation defects takes place. For this analysis, Raman spectra, resistivity depth profiles, as well as 1D-SUPREM III simulation were used.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 69 (1998), S. 3331-3338 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: The optical properties of several thin metal film palladium-silicon oxide structures are examined at room temperature before and after annealing to 200 °C and also at 90 °C—in all cases in the presence of hydrogen gas. Multicycling sample activation is shown to occur in the presence of hydrogen at room temperature with an increase in reflectivity on exposure to hydrogen, in contrast to thicker 80 Å films. The reflectivity change increases with increasing film thickness (1–10 Å). The surface activation at room temperature, before and after annealing to 200 °C, is compared with the performance at 90 °C, where it is shown that heat treatment strongly influences the behavior of the metal film.© 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 66 (1995), S. 3112-3115 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A spectrally narrow linewidth KrF excimer laser has been developed for the application of writing Bragg gratings in optical fibers. Two air spaced etalons 80 and 6 cm−1 have been incorporated within the laser cavity resulting in a laser line with a linewidth of approximately 4 pm. A stable wavelength setting for writing Bragg gratings has been achieved without the necessity of a feedback mechanism. A study of the formation of Bragg grating in optical fibers with this narrow linewidth KrF excimer laser has been carried out. High quality gratings have been demonstrated in hydrogen sensitized fibers with a pulse energy density as low as 20 mJ/cm2. Limitations and various problems encountered in inscribing Bragg gratings (such as two simultaneous grating lines) with the narrow linewidth excimer laser source are also discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 3544-3552 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A study of a thermal wave hydrogen sensor interrogated via transverse optical beam deflection spectroscopy is presented. The sensor is a thin film polyvinylidene fluoride film coated with a thin palladium layer. The sensitivity to hydrogen results from thermal boundary condition changes at the gas–film interface and depends upon the thermophysical properties of the gas. A simple one-dimensional model is developed to qualitatively and semi-quantitatively describe the experimental results and it shows good agreement with the experiment. Concentrations of 0.1% hydrogen in the presence of a balanced air mixture and at room temperature were measured for this sensor and they indicate possible sensitivities approaching 100 ppm. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 68 (1997), S. 4309-4341 
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: Since the discovery of photosensitivity in optical fibers there has been great interest in the fabrication of Bragg gratings within the core of a fiber. The ability to inscribe intracore Bragg gratings in these photosensitive fibers has revolutionized the field of telecommunications and optical fiber based sensor technology. Over the last few years, the number of researchers investigating fundamental, as well as application aspects of these gratings has increased dramatically. This article reviews the technology of Bragg gratings in optical fibers. It introduces the phenomenon of photosensitivity in optical fibers, examines the properties of Bragg gratings, and presents some of the important developments in devices and applications. The most common fabrication techniques (interferometric, phase mask, and point by point) are examined in detail with reference to the advantages and the disadvantages in utilizing them for inscribing Bragg gratings. Reflectivity, bandwidth, temperature, and strain sensitivity of the Bragg reflectors are examined and novel and special Bragg grating structures such as chirped gratings, blazed gratings, phase-shifted gratings, and superimposed multiple gratings are discussed. A formalism for calculating the spectral response of Bragg grating structures is described. Finally, devices and applications for telecommunication and fiber-optic sensors are described, and the impact of this technology on the future of the above areas is discussed. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1280-1285 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A quantitative analysis of the influence of temperature and modulation frequency on the thermal activation coupling term in laser photothermal theory is performed. Until now it was taken for granted that the coupling term is negligible only in the case of "relatively low" temperatures and generally when the equilibrium free-carrier density n0 satisfies the Sablicov's, Vasil'ev, and Sandomirskii inequality. In this work an extensive computational study of this inequality in the temperature range of 300–1000 K was performed and a precise "map" is given concerning the violation of the inequality under various conditions including modulation frequency (0.1–106 Hz) and doping concentration (intrinsic to 1020 cm−3). Some experimental photomodulated measurements have been performed in order to test the validity of the "map." © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
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