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  • 1
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 81 (2002), S. 856-858 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In this letter, the spatial dependence of the carrier recombination centers induced in phosphorus-implanted and annealed silicon wafers have been examined. Ultrafast time-resolved reflectivity measurements of a set of phosphorus-implanted annealed silicon wafers (1016 P+/cm2) as a function of position on the wafer have been carried out, and an x–y map of the carrier lifetime for each of the samples has been obtained. Measurements reveal distinct features of the distribution of carrier recombination centers for the nonannealed and annealed samples between 350 °C and 1100 °C in an area of 36×36 μm2 with resolution better than 3 μm. The presence of islands of clusters in ion-implanted and annealed samples is also discussed in this letter. © 2002 American Institute of Physics.
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2392-2394 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laser-induced photothermal reflectance (PTR) measurements of arsenic-implanted silicon are reported. The photothermal signals as a function of temperature are presented for both annealed and as-implanted silicon films. The ability to monitor the dependence of signal on doping and on the temperature suggests a novel nondestructive means for characterization of implanted layers. The latter dependence has been qualitatively explained in terms of the temperature variation of the thermal wave effect.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 796-800 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Room-temperature photoluminescence measurements are performed in order to study the effect of thermal annealing on phosphorus implanted silicon wafers. Measurements are carried out at near band gap excitation with a Nd:YAG laser operating at 1.06 μm. Photoluminescence measurements are also carried out with 0.488 μm laser excitation. It was found that implantation conditions (dose and energy) and annealing temperature strongly influence the intensity of the photoluminescence signal. Contribution from the bulk silicon and the effects from the ion implantation to the photoluminescence signal are discussed. © 1995 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3377-3384 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A study of the effects of annealing temperature on phosphorus-implanted silicon films is carried out. Fourier transform infrared spectroscopy has been performed with two different instruments in the spectral ranges of 0.75–4 μm and 3–25 μm. In the first spectrum range special attention was given to the influence of implantation dose on reflectivity. The minimum reflectivity associated with plasma resonance has been fully employed for estimation of the electrical activation of implanted impurities. Other conclusions concerning the activation of free carriers (implanted impurities) with implantation dose and annealing temperature have been reached.
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8032-8038 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Raman and electrical characterization measurements are performed in order to study the effects of thermal annealing on phosphorus implanted silicon wafers. The silicon layers were implanted for various implantation energies and doses, below, and over the critical dose of amorphization. The post-implanted period was followed by thermal isochronal annealing at various temperatures. Special attention has been given to the amorphous/crystal transition occurring at various annealing temperatures. A bi layer model [R. Loudon, J. Phys. (Paris) 26, 677 (1965)] has been used for a quantitative determination of the annealing temperature at which a complete annihilation of implantation defects takes place. For this analysis, Raman spectra, resistivity depth profiles, as well as 1D-SUPREM III simulation were used.
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  • 6
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4496-4504 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed photothermal electrostatic consideration of the Pd-pyroelectric junction H2 sensor is presented. Experimental evidence is in agreement with the fundamental features of the theory, which supports two possible mechanisms of ac-mode device operation: pyroelectric coefficient dependence on the hydrogenic dipole-induced charge density at the Pd-insulator polyvinylidene fluoride interface, and thermal-wave modulation of the hydrogen-concentration-dependent Pd work function. The dominant operating mechanism is found to depend on the experimental conditions. The concept of image dipole thermostatistical vibration and libration in the pyroelectric matrix is further successfully used to explain the temperature dependence of the photopyroelectric signal in support of the former above-mentioned mechanism.
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  • 7
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon films damaged by ion implantation have been examined using the photothermal reflectance technique in the thermal wave regime (low-modulation frequencies, large laser beam spot sizes). Data are presented on the sensitivity of this method to the implant dose and to the effects of thermal annealing. It has been shown that the technique provides information about the state of the implanted layer, and is a sensitive probe for monitoring the annihilation of the induced damage as a function of the annealing temperature. A model for the kinetics of damage annihilation has been presented to estimate the activation energy of the local annealing recovery mechanism, found to be 0.15 eV. The presence of negative annealing has been detected at about 500 °C, an advantage over the essentially insensitive Hall mobility method.
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  • 8
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photothermal reflectance investigations as a function of temperature of various forms of silicon (crystalline, ion-implanted, amorphous) are reported largely in the thermal wave regime (low-modulation frequencies and large laser beam spot sizes). The observed results have been explained by a thermal wave model that has been extended to include the effect of lattice temperature. The influence of substrate on the observed signal has been examined in light of the temperature and frequency dependence of the thermal diffusion length. The possible application of the technique to depth-profiling studies, and to the investigation of ion-implanted semiconductors, is discussed.
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  • 9
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new type of solid-state sensor for the detection of minute concentrations of hydrogen gas has been developed. The sensor was made of thin, commercially available polyvinylidene fluoride (PVDF) pyroelectric film, sputter coated with Pd. An infrared laser beam served to produce alternating temperature gradients on the Pd-PVDF and on reference Al-Ni-PVDF films, which, in turn, generated ac voltages due to the photopyroelectric (P2E) effect. Exposure to hydrogen gas was shown to produce an increased differential signal between the Pd and reference electrodes; this was tentatively attributed to the adsorption and dissociation of hydrogen molecules on the Pd surface, which caused a shift on the Pd-PVDF pyroelectric coefficient, due to interactions at the Pd-PVDF interface. The differential signal was found to be proportional to the square root of the hydrogen partial pressure at very low concentrations (〈1000 ppm). A semiquantitative interpretation of the differential signal has been achieved using simple gas-solid interaction theory and the combination of the Langmuir isotherm with the photopyroelectric theory in the range of 4–200 Pa. For high pressures (〉200 Pa) the paper is limited only to a phenomenological description. The thickness of the palladium layer has been found to play an important role with respect to the signal response. Presently, hydrogen concentrations as small as 40 ppm, in a flowing H2+N2 mixture, have been detected. The influence of gas flow rate has also been studied. Other characteristics such as the response times, the reversibility, and the durability of the Pd-PVDF-P2E hydrogen detector will also be presented.
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  • 10
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A 6-MHz piezoelectric quartz-crystal microbalance coated with palladium electrodes has been used under STP gas flow-through conditions to detect hydrogen adsorption at low concentrations (〈5% in nitrogen) where anomalous behavior has been observed due to interferences from other ambient or impurity gases (mainly O2). A systematic study showed that a concentration of 0.4% hydrogen produced no frequency shift in the sensor due to counterbalancing effects from other gases. Thus sensor sensitivity limits were established at 0.5% hydrogen, which is ca.∼200 times lower than the photopyroelectric (P2E) sensor (part I). The hydrogen selectivity of the piezoelectric sensor was found to be inferior to that of the P2E device.
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