Electronic Resource
Elhamri, Said
;
Ahoujja, M.
;
Ravindran, K.
;
[et al.]
Mast, D. B.
;
Newrock, R. S.
;
Mitchel, W. C.
;
Brown, G. J.
;
Lo, Ikai
;
Razeghi, Manijeh
;
He, Xiaguang
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
66 (1995), S. 171-173
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Persistent photoconductivity has been observed at low temperatures in thin, unintentionally doped GaInP/GaAs/GaInP quantum wells. The two-dimensional electron gas was studied by low field Hall and Shubnikov–de Haas effects. After illumination with red light, the electron concentration increased from low 1011 cm−2 to more than 7×1011 cm−2 resulting in an enhancement of both the carrier mobility and the quantum lifetime. The persistent photocarriers cannot be produced by DX-like defects since the shallow dopant concentration in the GaInP layers is too low to produce the observed concentration. We suggest that the persistent carriers are produced by photoionization of deep intrinsic donors in the GaInP barrier layer. We also report observation of a parallel conduction path in GaInP induced by extended illumination. © 1995 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.113553
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