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  • Articles  (192)
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  • 1
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    Molecularly resolved label-free sensing of single nucleobase mismatches by interfacial LNA probes (2016)
    Oxford University Press
    Details
    Publication Date: 2016-05-06
    Description: So far, there has been no report on molecularly resolved discrimination of single nucleobase mismatches using surface-confined single stranded locked nucleic acid (ssLNA) probes. Herein, it is exemplified using a label-independent force-sensing approach that an optimal coverage of 12-mer ssLNA sensor probes formed onto gold(111) surface allows recognition of ssDNA targets with twice stronger force sensitivity than 12-mer ssDNA sensor probes. The force distributions are reproducible and the molecule-by-molecule force measurements are largely in agreement with ensemble on-surface melting temperature data. Importantly, the molecularly resolved detection is responsive to the presence of single nucleobase mismatches in target sequences. Since the labelling steps can be eliminated from protocol, and each force-based detection event occurs within milliseconds' time scale, the force-sensing assay is potentially capable of rapid detection. The LNA probe performance is indicative of versatility in terms of substrate choice - be it gold (for basic research and array-based applications) or silicon (for ‘lab-on-a-chip’ type devices). The nucleic acid microarray technologies could therefore be generally benefited by adopting the LNA films, in place of DNA. Since LNA is nuclease-resistant, unlike DNA, and the LNA-based assay is sensitive to single nucleobase mismatches, the possibilities for label-free in vitro rapid diagnostics based on the LNA probes may be explored.
    Keywords: Polymorphism/mutation detection
    Print ISSN: 0305-1048
    Electronic ISSN: 1362-4962
    Topics: Biology
    Published by Oxford University Press
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  • 2
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    Cell biology. Oxygen sensing: it's a gas! (2004)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 2004-12-18
    Description: 〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Hoshi, Toshinori -- Lahiri, Sukhamay -- New York, N.Y. -- Science. 2004 Dec 17;306(5704):2050-1.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Department of Physiology, School of Medicine, University of Pennsylvania, Philadelphia, PA 19104, USA. hoshi@hoshi.org〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/15604396" target="_blank"〉PubMed〈/a〉
    Keywords: Animals ; Carbon Monoxide/*metabolism ; Carotid Body/*cytology/*physiology ; Cell Hypoxia ; Cell Membrane/physiology ; Cells, Cultured ; Heme/metabolism/pharmacology ; Heme Oxygenase (Decyclizing)/genetics/*metabolism ; Hemeproteins/metabolism ; Large-Conductance Calcium-Activated Potassium Channels ; Membrane Potentials ; Mitochondria/metabolism ; NADP/pharmacology ; NADPH Oxidase/metabolism ; Oxidation-Reduction ; Oxygen/*physiology ; Potassium Channels, Calcium-Activated ; Proteomics ; RNA, Small Interfering/pharmacology ; Signal Transduction
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 3
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    Chemical modification of carotid body chemoreception by sulfhydryls (1981)
    American Association for the Advancement of Science (AAAS)
    Details
    Publication Date: 1981-05-29
    Description: Sulfhydryl reagents cause striking augmentation of the chemoreceptor responses of the carotid body to hypoxia. This indicates that a cellular plasma membrane protein with a reactive sulfhydryl group is a constituent part of the chemoreceptor architecture and provides a means of identification, localization, and isolation of the protein.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Lahiri, S -- HL-19737/HL/NHLBI NIH HHS/ -- New York, N.Y. -- Science. 1981 May 29;212(4498):1065-6.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/6262913" target="_blank"〉PubMed〈/a〉
    Keywords: 4-Chloromercuribenzenesulfonate/pharmacology ; Animals ; Carotid Body/drug effects/*physiology ; Cats ; Cell Membrane/physiology ; Chemoreceptor Cells/drug effects/*physiology ; Ethylmaleimide/pharmacology ; Sulfhydryl Compounds/*pharmacology
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
    Published by American Association for the Advancement of Science (AAAS)
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  • 4
    Electronic Resource
    Electronic Resource
    Scallop formation and dissolution of Cu–Sn intermetallic compound during solder reflow (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 3312-3317 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: In an effort to elucidate the mechanism of scallop formation during reflow of solder/Cu joints in flip-chip and ball-grid array technologies, a planar intermetallic compound layer (mostly Cu6Sn5) was initially formed by solid-state annealing of SnPb/Cu joints at 150 °C for ten days. Upon subsequent reflow, dissolution of the intermetallics and formation of scallops were observed. Detailed investigation has indicated that a thermal grooving process due to dissolution of the intermetallic compound during the initial reflow cycles contributes to the formation of scalloped structures, the morphology of which is dictated by the force equilibrium condition. Upon subjecting the solder joints to several reflows, the average intermetallic layer thickness was found to first decrease and then increase, which is shown to be in good agreement with the prediction made by a model based on simultaneous dissolution and growth of the intermetallic compound during reflow. The kinetics of dissolution-growth process during reflow has also been shown to depend on the initial intermetallic thickness and the shape of the solder cap. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1445283
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of reactive-ion bombardment on the properties of silicon nitride and oxynitride films deposited by ion-beam sputtering (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8145-8152 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon nitride and oxynitride films of very low hydrogen content have been deposited on silicon at low temperatures (150–200 °C) using ion-beam sputtering. A dual-ion-beam sputtering technique, making simultaneous use of an energetic argon-ion beam to sputter silicon nitride from a target and a low-energy oxygen or nitrogen ion beam to react with the sputtered films on the substrate, has been employed to control the composition of the films. A precise control of film composition independent of deposition rate has been achieved through the control of oxygen/nitrogen ion-beam parameters and gas flow ratios. The films have been characterized by the measurement and study of refractive index, chemical etch rate, infrared absorption, and x-ray photoelectron spectra. A direct correlation between film properties with oxygen content has been obtained for silicon oxynitride films. The electrical properties have been studied by the measurement of the characteristics of metal-insulator-semiconductor capacitors fabricated using the deposited films. In situ ion-beam oxidation of silicon prior to the oxynitride deposition has resulted in a film with a low insulator charge number density (3.5×1011 cm−2) and interface trap density (4×1011 cm−2 eV−1), which is suitable for device applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357027
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  • 6
    Electronic Resource
    Electronic Resource
    Deposition of composition-controlled silicon oxynitride films by dual ion beam sputtering (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2476-2478 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Silicon oxynitride films of controlled composition have been deposited on silicon by dual ion beam sputtering (DIBS) making simultaneous use of an energetic argon ion beam to sputter silicon nitride from a target and a low-energy oxygen ion beam to react with the sputtered film on the substrate. The correspondence between film properties and oxygen beam parameters has been studied from measurements of refractive index, chemical etch rate, infrared absorption, and x-ray photoelectron spectroscopy spectra. In situ ion beam oxidation of silicon prior to oxynitride deposition results in a film with a low insulator charge density (3.5×1011 cm−2) and interface trap density (4×1011 cm−2 eV−1).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.104848
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  • 7
    Electronic Resource
    Electronic Resource
    Coexistence of hexagonal and orthorhombic structures in NiSi films containing Pt (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2214-2216 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of Ni(Pt)Si films was investigated using high-resolution electron microscopy (HREM), electron microdiffraction and image simulation techniques. Such films with 5 at. % Pt were sputter deposited onto (111) Si and annealed for 1 min at 500 °C by rapid thermal annealing. Analysis of the HREM pictures, diffraction patterns, and simulation results has revealed that NiSi films containing Pt can assume both hexagonal and orthorhombic structures that can coexist in the same film. The presence of film stresses and Pt seems to play a role in the formation of hexagonal NiSi. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124968
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  • 8
    Electronic Resource
    Electronic Resource
    Ion assisted growth and characterization of polycrystalline silicon and silicon-germanium films (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 83 (1998), S. 4472-4476 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Polysilicon films have been deposited at a low temperature by single and dual ion beam sputtering. The structural and electrical properties of as-deposited and annealed films have been characterized by x-ray diffraction, secondary ion mass spectroscopy, atomic force microscopy, and Hall mobility measurements. The films are microcrystalline with average grain size ranging from 200 to 400 Å. The films exposed to a low-energy secondary ion beam during sputtering from a silicon target have exhibited smoother surface topography and different electrical behavior than the films deposited without any secondary ion bombardment. Some preliminary studies on ion beam sputtered SiGe films using a compound target are also presented. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.367209
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  • 9
    Electronic Resource
    Electronic Resource
    Roughness evolution of Cu6Sn5 intermetallic during soldering (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 86 (1999), S. 4916-4921 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The roughness evolution of the Cu6Sn5 intermetallic compound during the soldering reaction of 40/60% (by wt %) PbSn solder on Cu and its effects on wettability were studied due to their importance in the reworking of microelectronic components. The roughness parameters investigated were Rrms and the ratio, Rrms/λa, where Rrms is the root mean square roughness and λa is the average distance between asperities. It was found that Rrms increased with soldering time for the range of soldering times studied. The evolution of Rrms was found to follow a parabolic relation with soldering time—which is similar to that observed for the intermetallic thickness. However, the ratio Rrms/λa was found to increase very gradually for the range of soldering times investigated. From the ratio Rrms/λa obtained, the average inclination of the intermetallic morphology was calculated. The average inclination of the Cu6Sn5 intermetallic morphology was found to be greater than the apparent contact angle observed during the wetting of the 40/60% PbSn solder on Cu substrates. This inconsistency was attributed to the difference in the roughness of the Cu6Sn5 intermetallic in the inner regions and at the reaction band at the edge of the solder cap. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.371460
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  • 10
    Electronic Resource
    Electronic Resource
    Interdiffusion of high-Sn/high-Pb (SnPb) solders in low-temperature flip chip joints during reflow (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3635-3637 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We carried out experiments and numerical simulations to investigate the transport of Sn in a composite solder joint, comprising of high-Pb and high-Sn (SnPb) alloys, in a chip-composite solder-organic substrate package during the reflow process. Both the experimental and simulation results demonstrate that surface diffusion causes the transport of Sn on the surface to be faster than that inside the solder joint. Surface diffusion also accelerates the homogenization process of the composite solder joint. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125412
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