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1

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Formation of Ni silicide from Ni(Au) films on (111)Si (1996)

Mangelinck, D. ; Gas, P. ; Grob, A. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 79 (1996), S. 4078-4086

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The solid state reaction between a Ni (7 at. % Au) film and a Si substrate at temperatures ranging from 250 to 800 °C is examined by scanning electron microscopy, x-ray diffraction, and Rutherford backscattering spectrometry. Compared to the usual features for thin film reaction of Ni with Si, we observed the following. (i) The simultaneous growth of Ni2Si and NiSi, and the growth of NiSi at the expense of both Ni2Si and Ni. This is related to Au accumulation in the metal layer. (ii) Au precipitation at 300 °C followed by the dissolution of the clusters thus created above the Au–Si eutectic temperature (370 °C). (iii) A decrease of the temperature of formation of NiSi2 and the appearance of thickness oscillations that are characteristic of nucleation. These different effects are interpreted by taking into account the metallurgy of the system: segregation of Au in the Ni film, Au solubility in the different silicides, change in surface and interface energies, and chemical interactions with Si. © 1996 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.361770

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2

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Gold clusters precipitation at the interface between Ni(Au) silicides and (111) silicon (1995)

Mangelinck, D. ; Correia, A. ; Gas, P. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 78 (1995), S. 1638-1642

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The solid-state reaction between a nickel (7 at. % gold) film and a silicon substrate at temperature lower than the gold-silicon eutectic temperature (370 °C) is examined by transmission and scanning electron microscopy and by Rutherford backscattering spectrometry. Epitaxial NiSi and preferentially oriented Ni2Si are present and gold precipitation occurs at the inner interface. This gold precipitation leads to a peculiar backscattering spectrum which is analyzed taking into account morphological information. The driving forces leading to gold redistribution are interpreted in terms of surface energies and chemical interactions with silicon. © 1995 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.360258

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3

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Solid solubility of As in CoSi2 and redistribution at the CoSi2/Si interface (1999)

Mangelinck, D.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 86 (1999), S. 4908-4915

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The solid solubility of As in CoSi2 and the redistribution of As at the CoSi2/Si interface at temperatures between 650 and 950 °C have been investigated. As was implanted in the cap Si layer of mesotaxy samples (epitaxial CoSi2 layers buried in a Si substrate). The As profiles after annealing were measured by secondary ion mass spectrometry. The solubility of As is lower in the cobalt disilicide than in silicon. A detailed description of thermodynamic equilibrium between the solution of As in CoSi2 and the solution of As in Si shows that the distribution coefficient is dependent on the concentration. Within the experimental accuracy, the enthalpy of solution, deduced from the distribution coefficient, is constant in the temperature range and equal to 0.28 eV. The solution of As in CoSi2 can thus be described by Henry's law, which is valid for dilute solutions. Accumulation of As at both interfaces of the buried CoSi2 layer has been observed and is discussed in terms of segregation and precipitation. A transient enhancement of the As diffusion in the Si substrate has also been found. Simulation of the redistribution process shows that this enhancement is not due to the diffusion of As in CoSi2 but more likely associated with the excess of point defects resulting from ion implantation or from the silicide film. On the basis of both ternary phase diagram calculations and experimental results, it is shown that there is a ternary equilibrium between Si(As), CoSi2, and SiAs in contrast to the equilibrium between Si(As), CoSi2, and CoAs reported previously by other authors. It is shown that the latter equilibrium should decrease the solubility of As in Si, but such a decrease has never been observed experimentally. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.371459

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4

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Comparative study of current–voltage characteristics of Ni and Ni(Pt)-alloy silicided p+/n diodes (2001)

Chi, D. Z. ; Mangelinck, D. ; Lahiri, S. K.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 78 (2001), S. 3256-3258

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: A comparative study of the I–V characteristics of p+/n diodes silicided with a pure Ni and Ni(Pt) alloy has been performed. Higher saturation currents as well as abnormal reverse I–V characteristics were observed for some of the diodes which were silicided with pure Ni at 700 °C while good I–V characteristics were observed for other diodes. Our results show that the forward current in the diodes with good I–V characteristics is dominated by electron diffusion in the p+ region. For diodes with higher saturation currents, it has been concluded that both forward and reverse currents in these diodes are dominated by the current following through Schottky contacts that are formed due to inadvertent penetration of NiSi spikes through the p+ region into n region. The formation of Schottky contact was not observed in diodes silicided with a Ni(Pt) alloy, providing a clear evidence of enhanced thermal stability of Pt containing NiSi. © 2001 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.1374496

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5

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Nickel-platinum alloy monosilicidation-induced defects in n-type silicon (2000)

Chi, D. Z. ; Mangelinck, D. ; Dai, J. Y. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 76 (2000), S. 3385-3387

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Electrically active defects induced by the formation of nickel–platinum alloy monosilicide (formed at 600–800 °C) has been studied in n-type silicon using deep level transient spectroscopy and transmission electron microscopy measurements. A Ni-related electron trap level at Ec−0.42 eV is observed after silicidation at 600 °C or above and a Pt-related electron trap level at Ec−0.50 eV is detected after silicidation at 700 °C or above. Two hole trap levels at Ev+0.22 and Ev+0.28 eV are also detected, Ev+0.22 eV level for silicidation at 700 °C or above and Ev+0.28 eV level for 600 °C silicidation. For the sample silicided at 600 °C, an additional electron trap level (located at Ec − 0.16 eV) with a broad spectral peak is detected in the near-surface region (〈0.65 μm) of the sample in which some {311} type defects of 50–100 Å long are also observed. Most of observed electrically active defects have been found to be present in near-surface regions (〈2 μm). Lowest total defect concentration is observed in the sample silicided at 700 °C where lowest reverse saturation current is also observed, indicating that the Ni(Pt) monosilicidation-induced electrically active defects are effective recombination/generation centers. © 2000 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.126741

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6

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Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition (1999)

Mangelinck, D. ; Dai, J. Y. ; Pan, J. S. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 75 (1999), S. 1736-1738

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The effect of a small amount of Pt (5 at. %) on the thermal stability of NiSi film on (100) and (111) Si substrates has been investigated both by in situ annealing inside an x-ray photoelectron spectroscopy system and by ex situ rapid thermal annealing. The addition of platinum increases the disilicide nucleation temperature to 900 °C leading to a better stability of NiSi at high temperatures. In the presence of Pt, NiSi films on both (111)Si and (100)Si substrates develop a texture with the relationship (100)NiSi(parallel)(111)Si and (010)NiSi(parallel)(100)Si. The increase in thermal stability has been explained in terms of the nucleation concept. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.124803

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7

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Coexistence of hexagonal and orthorhombic structures in NiSi films containing Pt (1999)

Dai, J. Y. ; Mangelinck, D. ; Lahiri, S. K.

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 75 (1999), S. 2214-2216

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: The structure of Ni(Pt)Si films was investigated using high-resolution electron microscopy (HREM), electron microdiffraction and image simulation techniques. Such films with 5 at. % Pt were sputter deposited onto (111) Si and annealed for 1 min at 500 °C by rapid thermal annealing. Analysis of the HREM pictures, diffraction patterns, and simulation results has revealed that NiSi films containing Pt can assume both hexagonal and orthorhombic structures that can coexist in the same film. The presence of film stresses and Pt seems to play a role in the formation of hexagonal NiSi. © 1999 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.124968

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8

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Influence of the addition of Co and Ni on the formation of epitaxial semiconducting β-FeSi2: Comparison of different evaporation methods (1998)

Mangelinck, D.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 83 (1998), S. 4193-4201

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: β-FeSi2 films containing 4–25 at. % of Co or Ni have been grown on (111) Si using three different evaporation methods: deposition of the metal film at room temperature followed by solid state reaction (solid phase epitaxy), deposition of the metal on a heated wafer [reactive deposition epitaxy: (RDE)] codeposition of metal and Si in the stoichiometric proportions [molecular beam epitaxy: (MBE)]. The films have been analysed with Rutherford backscattering spectrometry, x-ray diffraction, secondary ion mass spectroscopy, and scanning electron microscopy. We show that β-FeSi2 can be obtained with the three methods, however the quality, the epitaxial character and the morphology of the films differ. By far, the best results are obtained by MBE. In that case the codeposition of a Fe(Ni) alloy and Si at 550 °C leads to a large, epitaxial, mirror like β-Fe(Ni)Si2 layer with a homogeneous Ni concentration. Detailed analysis of the Fe(Ni) and Fe(Co)/Si reaction and comparison with the Fe/Si one shows that: (i) Ni and Co do not modify the temperature of formation and the stability of the different Fe silicides providing the solubility limits in the different phases are not exceeded (e.g., 6 and 12 at. % in β-FeSi2), (ii) the first stages of the reaction are characterized by the formation of a nonhomogeneous layer of FeSi. We did not observe the formation of a Si solid solution in Fe or of the ordered Fe3Si phase, (iii) the transformation from FeSi to β-FeSi2 induces a degradation of the β-FeSi2 layer morphology. This explains why the processes (RDE and MBE) bypassing the formation of FeSi give better epitaxial layers. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.367174

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9

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Effect of Co, Pt, and Au additions on the stability and epitaxy of NiSi2 films on (111)Si (1998)

Mangelinck, D.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 84 (1998), S. 2583-2590

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We studied the effect of the addition of cobalt, platinum, or gold on the cell parameter of NiSi2 deposited epitaxially on (111)Si. Namely, the formation and the microstructure of NiSi2 films containing one of these elements are compared to those of the pure disilicide. The solubility of Co, Pt, and Au in NiSi2 ranges from a total substitution to nickel in the case of cobalt to a very weak quantity (less than 1%) in the case of platinum. An intermediate behavior was observed for gold which can occupy more than 10% of the metal sites. This important solubility has been confirmed by analysis of bulk Ni(Au) disilicides and is understood as a consequence of the metastability of gold silicides. Cobalt, Pt, and Au additions change the temperature of formation of NiSi2: from 800 °C for reaction with pure nickel, this temperature is lowered to 650 °C by Co and Au additions while it is increased to 950 °C for Pt. These modifications are consistent with the nucleation controlled formation of NiSi2 and the effect of added elements on both the interfacial energy and the stability of the disilicide. Measurements of the cell parameters (perpendicular and parallel) by x-ray diffraction revealed the relaxation state and the cell evolution of NiSi2 films. Platinum addition does not modify the cell in agreement with a very weak incorporation of platinum in NiSi2. The rigid interface model is well adapted to the growth of NiSi2, Ni(Au)Si2, and Ni(Co)Si2 films. According to this model and in spite of a large rhombohedral deformation, the system which better accommodates silicon is Ni(Co)Si2: in this case, there is practically no misfit between the film and the substrate. We also showed that misfit dislocations are generated principally during the NiSi2 formation and that their density evolves very little afterwards. © 1998 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.368611

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