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  • 1
    Electronic Resource
    Electronic Resource
    Prediction of Partitioning Properties for Benzaldehydes by Various Molecular Descriptors (1998)
    Springer
    Bulletin of environmental contamination and toxicology 61 (1998), S. 1-7 
    Details
    ISSN: 1432-0800
    Source: Springer Online Journal Archives 1860-2000
    Topics: Energy, Environment Protection, Nuclear Power Engineering , Medicine
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s001289900721
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  • 2
    Electronic Resource
    Electronic Resource
    Determination of the optical constants of zinc oxide thin films by spectroscopic ellipsometry (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3261-3263 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Spectroscopic ellipsometry (SE) has been used to determine the complex pseudo dielectric functions, ε1(E)+iε2(E), of ZnO films on (0001) Al2O3 substrates over the spectral range of 1.33 and 4.96 eV at room temperature. The SE measurements are carried out with E⊥c at angles of incidence of 60° and 65° with respect to the surface normal. Below the band gap, the refractive index n is found to follow the first order Sellmeir dispersion relationship n2(λ)=1+1.881λ2/(λ2−0.05382). A free excitonic structure located at the band edge of 3.32 eV is clearly observed in the pseudo absorption spectrum. Elliott expression with Lorentzian broadening is used to model the pseudo absorption coefficient above the band edge. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121617
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  • 3
    Electronic Resource
    Electronic Resource
    Interfacial reactions on annealing Cu/Al multilayer thin films (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 6165-6169 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin film reactions of Cu/Al multilayer films were investigated by differential scanning calorimetry and transmission electron microscopy. Sequential intermetallic compound formation was found in the temperature range from 300 to 620 K. With excess copper present in the as-deposited trilayer and multilayer films, the observed sequence was CuAl2 and Cu9Al4, and the interfacial reactions were controlled by interfacial and grain boundary diffusion. The activation energies for the formation of CuAl2 and Cu9Al4 are 0.78±0.11 and 0.83±0.2 eV, respectively.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355183
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  • 4
    Electronic Resource
    Electronic Resource
    Nickel-platinum alloy monosilicidation-induced defects in n-type silicon (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3385-3387 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrically active defects induced by the formation of nickel–platinum alloy monosilicide (formed at 600–800 °C) has been studied in n-type silicon using deep level transient spectroscopy and transmission electron microscopy measurements. A Ni-related electron trap level at Ec−0.42 eV is observed after silicidation at 600 °C or above and a Pt-related electron trap level at Ec−0.50 eV is detected after silicidation at 700 °C or above. Two hole trap levels at Ev+0.22 and Ev+0.28 eV are also detected, Ev+0.22 eV level for silicidation at 700 °C or above and Ev+0.28 eV level for 600 °C silicidation. For the sample silicided at 600 °C, an additional electron trap level (located at Ec − 0.16 eV) with a broad spectral peak is detected in the near-surface region (〈0.65 μm) of the sample in which some {311} type defects of 50–100 Å long are also observed. Most of observed electrically active defects have been found to be present in near-surface regions (〈2 μm). Lowest total defect concentration is observed in the sample silicided at 700 °C where lowest reverse saturation current is also observed, indicating that the Ni(Pt) monosilicidation-induced electrically active defects are effective recombination/generation centers. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126741
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  • 5
    Electronic Resource
    Electronic Resource
    Second harmonic generation in laser ablated zinc oxide thin films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 572-574 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have observed large second-order nonlinear optical response from zinc oxide (ZnO) thin films deposited on sapphire substrates by pulsed laser ablation. By comparing the second harmonic signal generated in a series of ZnO films with different crystallinity and thickness, we conclude that a significant part of the second harmonic signal is generated at the grain boundaries and interfaces. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121859
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  • 6
    Electronic Resource
    Electronic Resource
    Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3656-3658 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A semiconductor laser whose cavities are "self-formed" due to strong optical scattering in highly disordered gain media is demonstrated. The lasers are made of zinc oxide polycrystalline films grown on amorphous fused silica substrates. Lasing occurs at an ultraviolet wavelength of ∼380 nm under optical pumping. Actual images of the microscopic laser cavities formed by multiple scattering have been captured. These results suggest the possibility of using disordered semiconductor microstructures as alternative sources of coherent light emission. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122853
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  • 7
    Electronic Resource
    Electronic Resource
    A promising pathway to make multiwalled carbon nanotubes (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 76 (2000), S. 3008-3010 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current theories for multiwalled nanotube growth (without metal catalysts) describe the growth of multiwalled nanotubes by the addition of carbon atoms, ions, or small molecules to an open ended nanotube nucleus. In this letter, we describe a method to make carbon nanotubes similar in quality to those found on the cathode deposit of the carbon arc by manipulating the heat treatment of various nongraphitizable carbon precursors. It is proposed that this method of making nanotubes via heat treatments is analogous to a graphitization process, where aromatic/graphitic fragments in disordered carbons assemble into three-dimensional graphitic structures. In addition, we have demonstrated that simple precursors, such as sucrose, can be used as starting materials. These experiments offer new opportunities to understand nanotube growth and could lead to scalable methods to make multiwalled nanotubes. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.126561
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  • 8
    Electronic Resource
    Electronic Resource
    Enhancement of thermal stability of NiSi films on (100)Si and (111)Si by Pt addition (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1736-1738 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of a small amount of Pt (5 at. %) on the thermal stability of NiSi film on (100) and (111) Si substrates has been investigated both by in situ annealing inside an x-ray photoelectron spectroscopy system and by ex situ rapid thermal annealing. The addition of platinum increases the disilicide nucleation temperature to 900 °C leading to a better stability of NiSi at high temperatures. In the presence of Pt, NiSi films on both (111)Si and (100)Si substrates develop a texture with the relationship (100)NiSi(parallel)(111)Si and (010)NiSi(parallel)(100)Si. The increase in thermal stability has been explained in terms of the nucleation concept. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124803
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  • 9
    Electronic Resource
    Electronic Resource
    Formation of cobalt silicide spikes in 0.18 μm complementary metal oxide semiconductor process (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 3091-3093 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Co silicide spikes have been found in active contact salicidation in complementary metal oxide semiconductor devices during failure analysis by means of transmission electron microscopy examination. Scanning transmission electron microscopy, energy dispersive x-ray analysis and microdiffraction study revealed that these spikes are CoSi2 with an epitaxial relationship with Si of (111)CoSi2//(111)Si and [11¯0]CoSi2//[11¯0]Si. The formation of the CoSi2 spikes are suspected to be due to the presence of undesired SiOx residue between Co film and Si substrate which acts as a solid diffusion membrane to cause the Si rich phase CoSi2 to precipitate directly inside Si lattice. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1372621
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  • 10
    Electronic Resource
    Electronic Resource
    Coexistence of hexagonal and orthorhombic structures in NiSi films containing Pt (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 2214-2216 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The structure of Ni(Pt)Si films was investigated using high-resolution electron microscopy (HREM), electron microdiffraction and image simulation techniques. Such films with 5 at. % Pt were sputter deposited onto (111) Si and annealed for 1 min at 500 °C by rapid thermal annealing. Analysis of the HREM pictures, diffraction patterns, and simulation results has revealed that NiSi films containing Pt can assume both hexagonal and orthorhombic structures that can coexist in the same film. The presence of film stresses and Pt seems to play a role in the formation of hexagonal NiSi. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124968
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