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  • 1
    Electronic Resource
    Electronic Resource
    X-ray pole-figure study of the epitaxial growth of C60 thin films on mica (001) (1995)
    Springer
    Applied physics 60 (1995), S. 383-389 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.55; 61.10; 81.40.Ef
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. The growth of epitaxial C60 thin films on mica(0 0 1) by thermal evaporation has been studied in detail by X-ray pole-figure measurements. The influence of the deposition rate, the substrate temperature and the film thickness on the in-plane epitaxial arrangements and the formation of twins has been investigated. It has been demonstrated that the C60 growth is determined by two independent and equivalent C60-crystal grain alignments (type-A and type-B). The nearly six-fold symmetry of the mica(0 0 1)-substrate surface offers the three-fold fcc-(1 1 1)-oriented C60-crystal grains two equivalent crystal alignments. A high deposition rate of 0.5 AÅ/s is responsible for the formation of twins at a substrate temperature of 150° C, which diminishes by a higher substrate temperature of 200° C. By a decrease of the deposition rate down to 0.08 AÅ/s the twins vanish at a film thickness of 200 nm and at the substrate temperature of 150° C. Under the same sublimation conditions, in addition to the type-A and type-B crystal orientations, the growth of the thin C60 films starts with a slight fibre texture which does not appear at a larger film thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538338
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  • 2
    Electronic Resource
    Electronic Resource
    Icosahedral quasicrystals of Al-Fe phase formed by ion-beam mixing (1987)
    Springer
    Journal of materials science 6 (1987), S. 401-403 
    Details
    ISSN: 1573-4811
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01756776
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  • 3
    Electronic Resource
    Electronic Resource
    Thin superconducting Y-Ba-Cu oxide films formed by ion beam mixing (1989)
    Springer
    The European physical journal 74 (1989), S. 155-163 
    Details
    ISSN: 1434-6036
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Polycrystalline superconducting thin films of Y-Ba-Cu oxides have been prepared by vapour deposition of alternate layers of Y, Ba and Cu, followed by oxygen or xenon ion beam induced mixing and short-time post-annealing at temperatures up to 800°C. The mixed multilayers have been characterized by scanning electron microscopy, energy dispersive X-ray analysis, high-voltage electron microscopy and measurements of the resistance. The samples were completely superconducting between 79 and 82 K with onsets as high as 110 K. The topography of surfaces is characterized by two types of grains, where the so-called type-A grains have a composition close to the 1-2-3 stoichiometry. Electron diffraction studies have shown the superconducting phase to crystallize in a orthorhombic structure. The microstructure is dominated by lamellar domains. These have been identified as twins, does terminate O−Cu−O in the inter-Ba Cu−O planes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01307381
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  • 4
    Electronic Resource
    Electronic Resource
    Formation of copper/gold solid solutions by ion beam mixing (1986)
    Springer
    Applied physics 40 (1986), S. 47-57 
    Details
    ISSN: 1432-0630
    Keywords: 61.14.Fe ; 61.70.Tm ; 81.40.Cd
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The formation of copper/gold solid solutions due to ion beam mixing was studied by Rutherford backscattering, high-voltage electron microscopy and transmission high-energy electron diffraction. Irradiation of multilayered Cu/Au thin films were performed with Xe+ ions or Ar+ ions at room temperature to doses ranging from 5×1015 to 2.5×1016 ions/cm2 and energies from 100 to 300 keV. The ion beam mixing leads to uniformly mixed metal layers. The grain size of mixed layers is pronounced increase. It was found that Cu/Au solid solutions are formed with different composition in dependence on itinial composition and implantation dose. Cu-rich and Au-rich solid solutions are induced by ion beam mixing at an initial composition Cu x Au100−x withx≧70. In addition to these solid solutions, a solid solution of middle composition Cu60...40Au40...60 is formed for an initial composition withx〈70. The kinetics of formation of solid solution is discussed as a function of the initial composition and implantation dose. Post-annealing experiments of mixed Cu50Au50 multilayers lead to lattice transformations and provide a superlattice structure CuAuI of the L10-type. With this process of ordering is associated the formation of dislocation loops.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00616591
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  • 5
    Electronic Resource
    Electronic Resource
    Ion beam mixing of Al/Fe binary systems (1989)
    Springer
    Applied physics 48 (1989), S. 347-354 
    Details
    ISSN: 1432-0630
    Keywords: 61.80 ; 68.35Fx
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Ion beam mixing of Al layers on Fe and Fe layers on Al are studied by irradiation with 200 keV Xe+-ions at room temperature as a function of the thickness of the top layer and of the ion fluence from 5×1015 to 7.5×1016ions/cm2. Deconvolution procedures are needed to separate the influence of the ion sputter profiling by AES from the ion beam induced mixing effects. Auger electron spectroscopy data reveal that the mixing induced diffusivity ought to be considered as a function of concentration. The diffusion coefficients are evaluated by the Boltzmann-Matano method. A strong dependence of the diffusion coefficients and also the mixing efficiencies from the ion dose, the depth of the interface and the nuclear energy deposition were observed. Results are discussed in terms of the diffusional and collisional mixing as well as chemical affinity of both Fe and Al.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00618897
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  • 6
    Electronic Resource
    Electronic Resource
    Investigations of near region of surface of soda-lime-silica glass and lithium-silica glass with secondary ion mass spectrometry (1980)
    Springer
    Applied physics 22 (1980), S. 233-236 
    Details
    ISSN: 1432-0630
    Keywords: 79.20 ; 81
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract Investigations on the layers near the surface of different glasses by means of secondary ion mass spectrometry are described. Both enrichment- and depletion zones can be demonstrated. The results are discussed on the basis of the model on corrosion behaviour by Hench.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00886012
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  • 7
    Electronic Resource
    Electronic Resource
    Study of the growth of fullerene-carbonized epitaxial SiC thin films by synchrotron radiation (1997)
    Springer
    Applied physics 64 (1997), S. 139-141 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.55; 61.10
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract.  Thin SiC films have been deposited on silicon(0 0 1) substrates by fullerene-carbonization. Using synchrotron radiation X-ray diffraction pole figure measurements have been employed in order to study the texture of the layers. It is qualitatively shown that the films contain epitaxially aligned β-SiC crystallites with the same orientation as the underlying substrate and their twins of first and second order. The orientational spread of the epitaxial crystallites in terms of tilt against and rotation around the substrate normal is smaller than 3°. The formation of twins as a growth defect plays a major role which is even more pronounced at a higher substrate temperature. Furthermore, an additional preferred orientation has been identified which can only be explained by a non-cubic SiC phase. The portion of these crystallites in the film can be considerably reduced by an increase of the deposition temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050454
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  • 8
    Electronic Resource
    Electronic Resource
    Damage buildup and removal in Ca-ion-implanted GaN (2000)
    Springer
    Applied physics 70 (2000), S. 53-57 
    Details
    ISSN: 1432-0630
    Keywords: PACS: 68.55.Ln; 61.72.Vv; 81.40.Ef
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract. Ca has been considered as a promising shallow acceptor in GaN and was chosen as a dopant for ion implantation with energy of 180 keV at room temperature. The as-implanted GaN films were characterized by Rutherford backscattering channeling, Raman spectroscopy, high-resolution X-ray diffraction, and compared with an unimplanted film as well as implanted samples subsequently annealed at 1150 °C for 15 s. The quantitative dependence of the damage buildup and its removal on the implantation dose has been determined. Lattice expansion that depends on dose and substrate temperature has been found. An initial amorphous component arises at a dose of 8×1014 cm-2. Implantation with higher doses causes unrecoverable damage that deteriorates the electrical properties. The possibilities to realize effective p-type doping by ion implantation are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/s003390050010
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  • 9
    Electronic Resource
    Electronic Resource
    X-ray pole-figure study of the epitaxial growth of C60 thin films on mica (001) (1995)
    Springer
    Applied physics 60 (1995), S. 383-389 
    Details
    ISSN: 1432-0630
    Keywords: 68.55 ; 61.10 ; 81.40.Ef
    Source: Springer Online Journal Archives 1860-2000
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Notes: Abstract The growth of epitaxial C60 thin films on mica(001) by thermal evaporation has been studied in detail by X-ray pole-figure measurements. The influence of the deposition rate, the substrate temperature and the film thickness on the in-plane epitaxial arrangements and the formation of twins has been investigated. It has been demonstrated that the C60 growth is determined by two independent and equivalent C60-crystal grain alignments (type-A and type-B). The nearly six-fold symmetry of the mica(001)-substrate surface offers the three-fold fcc-(111)-oriented C60-crystal grains two equivalent crystal alignments. A high deposition rate of 0.5 Å/s is responsible for the formation of twins at a substrate temperature of 150°C, which diminishes by a higher substrate temperature of 200°C. By a decrease of the deposition rate down to 0.08 Å/s the twins vanish at a film thickness of 200 nm and at the substrate temperature of 150°C. Under the same sublimation conditions, in addition to the type-A and type-B crystal orientations, the growth of the thin C60 films starts with a slight fibre texture which does not appear at a larger film thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF01538338
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  • 10
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    X-ray pole-figure study of the epitaxial growth of C60 thin films on mica (001) (1995)
    Springer
    Details
    Publication Date: 1995-03-01
    Print ISSN: 0947-8396
    Electronic ISSN: 1432-0630
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics , Physics
    Published by Springer
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