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  • 1
    Electronic Resource
    Electronic Resource
    Coupling of Ni and NiFe films through an intervening nonmagnetic film (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 4451-4453 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The magnetic coupling of 20-nm-thick Ni and Ni78Fe22 films through intervening Ag film has been investigated by ferromagnetic resonance (FMR) at 33 GHz. Films were deposited by e-beam evaporation on glass in the order glass/Ag/Ni/Ag/NiFe/Ag. The Ag over- and underlays were 20 nm thick; the central Ag-film thickness was varied between 0 and 20 nm. The coupling of the two ferromagnetic films, A and B, through the interface is modeled by adding −KMA⋅MB to the free energy per unit area. The FMR-mode positions are found from the solutions of a quadratic in K. Subsequently, FMR-mode intensities and linewidths are computed. Input data for these calculations were obtained from observations made on uncoupled Ni and NiFe films. From in-plane dc-field date a variation of K was deduced with a coupling film thickness t of the form exp(−t/τ) with τ equal to 2.68 nm. Limited FMR data taken with the dc field normal to the specimen are consistent with a weak coupling, K∼t−0.83. Little coupling was found in a glass/SiO2/Ni/SiO2/NiFe/SiO2 sequence with the SiO2 films spanning the same thickness range as the Ag in the first sequence. It is believed that the coupling in Ni/Ag/NiFe is dominated by conduction-electron-spin polarization. Some of the coupling may be magnetostatic in origin.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344901
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  • 2
    Electronic Resource
    Electronic Resource
    Wide range magnetic electron spectrograph (1989)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 60 (1989), S. 1233-1238 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An electron spectrograph is described that covers electron energies from 400 eV to 200 keV with an energy resolution of 10%. This overlaps the range of electrostatic deflection devices at low energy and solid state detectors at high energy. The spectrograph uses magnetic deflection of the electrons to achieve energy separation and images the full range of energies on a single plane. The magnetic circuit uses the fringing field of two axially located magnets to attain the large energy range. Six separate electron beams can be dispersed in the field, each entering the circuit from a different angle. This is a particular advantage when measuring plasma electron three-dimensional velocity distributions. The angular response of the instrument is particularly favorable and the stray magnetic field is sufficiently low to meet spacecraft requirements. Compared with electrostatic deflection devices, the spectrograph is particularly advantageous for measuring high energy electron plasma velocity distribution functions with fast time resolution at modest energy resolution.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1140296
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  • 3
    Electronic Resource
    Electronic Resource
    FMR in evaporated single and multilayer thin Fe films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 5760-5762 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used ferromagnetic resonance (FMR) at 33 GHz to study the properties of a number of evaporated thin Fe film systems. Values for effective anisotropy field HKeff , g value, and exchange constant A were derived. For Fe on glass, ||HKeff || was found to increase with increasing thickness. These changes were attributed to stress which decreased with film thickness. The presence of a Cu or a Ti underlayer did not seem to affect HKeff for films grown at room temperature. However, Fe/Ti/glass films made at higher substrate temperatures, Ts, did show an increase in ||HKeff ||. The appearance of a spin-wave mode in the Fe films enables us to compute the exchange constant A for Fe, A=(2.12±0.14)×10−6 ergs cm−1. The coupling between two thin Fe films through an intervening Cu layer was investigated. A model predicting the number and position of the peaks in the spectrum as a function of coupling is presented. From experiment it was observed that the coupling remains almost constant through the 50–5-nm Cu thickness range but rises sharply at 2-nm Cu thickness.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.342250
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  • 4
    Electronic Resource
    Electronic Resource
    Epitaxial growth of LaF3 on GaAs(111) (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 273-275 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first epitaxial growth of lanthanum trifluoride on the (111) surface of gallium arsenide. Smooth, crack-free, and high-crystalline quality films of thickness up to 200 nm were grown at 500 °C on a GaAs(111) surface that was cleaned by ion heat treatment and post-anneal. The film surfaces were examined in situ by low-energy electron diffraction (LEED) and ex situ by reflection high-energy electron diffraction (RHEED) and Nomarski optical microscopy. Capacitance-voltage (C-V) and current-voltage (I-V) measurements showed a breakdown strength of 2×106 V/cm and no significant flat-band shift due to insulator charges.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336825
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