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Epitaxial growth of LaF3 on GaAs(111) (1986)

Sinharoy, S. ; Hoffman, R. A. ; Rohatgi, A. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 59 (1986), S. 273-275

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We report the first epitaxial growth of lanthanum trifluoride on the (111) surface of gallium arsenide. Smooth, crack-free, and high-crystalline quality films of thickness up to 200 nm were grown at 500 °C on a GaAs(111) surface that was cleaned by ion heat treatment and post-anneal. The film surfaces were examined in situ by low-energy electron diffraction (LEED) and ex situ by reflection high-energy electron diffraction (RHEED) and Nomarski optical microscopy. Capacitance-voltage (C-V) and current-voltage (I-V) measurements showed a breakdown strength of 2×106 V/cm and no significant flat-band shift due to insulator charges.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.336825

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