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  • 1
    Electronic Resource
    Electronic Resource
    Hole injection in AlGaAs Schottky barriers: Influence on the DX center occupation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 5072-5078 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: It is shown that current instabilities, which are frequently observed at low temperatures in forward biased Schottky barriers on n-type AlGaAs, result from changes in the distribution of negatively charged donors (DX centers) near the metal contact. These changes cannot be ascribed to sample-heating effects, but they originate from hole injection in the barrier during forward biasing. The dominant mechanisms which are expected to induce the observed distortions in the DX center profile are (i) direct capture of the injected holes by the DX center and (ii) radiative electron-hole recombination resulting in DX center photoionization. The role of the two mechanisms is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.355750
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  • 2
    Electronic Resource
    Electronic Resource
    Erratum: "Production of semi-insulating layers in n-doped InP by Fe implantation'' [J. Appl. Phys. 76, 5085 (1994)] (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4159-4159 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359614
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  • 3
    Electronic Resource
    Electronic Resource
    Production of semi-insulating layers in n-doped InP by Fe implantation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 5085-5094 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A detailed study of Fe implantation and damage annealing in indium phosphide is presented. The technological goal was to obtain thermally stable semi-insulating layers in n-type InP. Different characterization techniques were employed, including structural (x-ray diffraction, Rutherford backscattering spectrometry, and transmission electron microscopy), chemical (secondary ions mass spectrometry), and electrical (current-voltage) measurements. Both undoped and n-type (Sn) doped substrates were implanted with Fe doses ranging from 5×1011 to 2.2×1014 cm−2 and annealed at a temperature of 650 °C. The high doses used to compensate n+ doping caused amorphization of the material. The reordering process of the amorphous layers and its influence on the Fe redistribution properties were studied in detail. The activation of the implanted Fe atoms after annealing was derived. Although the recovery process of the amorphized layer appears to be rather complex, our results show that good crystal quality and full compensation can be reached also for n+ doped substrates, leading to resistivity values above 2×107 Ω cm, even starting from an initial doping level as high as 1.4×1018 cm−3.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357220
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  • 4
    Electronic Resource
    Electronic Resource
    Electron-beam-induced current and photoetching investigations of dislocations and impurity atmospheres in n-type liquid-encapsulated Czochralski GaAs (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 65 (1989), S. 4646-4653 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Typical defects in n-type liquid-encapsulated Czochralski GaAs, i.e., grown-in dislocations and grown-in and then stress-induced glide (GS) dislocations have been studied by electron-beam-induced current (EBIC) and diluted Sirtl-like etching with light (DSL photoetching). The study of GS dislocations was possible because both EBIC and DSL can reveal the recombinative traces left behind the moving dislocations. Grown-in dislocations and the ending points of GS dislocations exhibit a central feature more recombinative than the external atmosphere. No such central feature has been detected at the starting points of the GS dislocations. A model for the formation of the impurity atmospheres in the GS defects has been put forward. By quantitative EBIC measurements performed right in the impurity atmospheres (∼5–20 μm in size) around dislocations, the local space-charge region width of the EBIC Schottky diode was determined. Information on the net ionized impurity concentration in the atmospheres could thus be obtained. It has been established that silicon (dopant) autocompensation along with the gettering of other unknown impurities and point defect reactions probably involving arsenic interstitials are important features of the atmospheres.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343239
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  • 5
    Electronic Resource
    Electronic Resource
    Hole diffusion length investigation by photon and electron excitation of GaAs Schottky barriers (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1745-1752 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A hole diffusion length in liquid-encapsulated-czochralski (LEC) GaAs monocrystals (Si-doped, n(approximately-equal-to)1015–1016 cm−3) in the range (0.4–3.0) 10−4 cm, has been determined by photon and electron bombardment through semitransparent Au or Cr Schottky electrodes. A minority-carrier lieftime in the range (0.3–9.7) 10−9 s was estimated. Schottky barrier diodes with abrupt junctions giving optimum electrical characteristics were prepared. The absorption length of the examined samples was evaluated by optical transmission measurements. The diffusion length investigation, which was carried out by the steady-state surface photovoltage (SPV) and the scanning electron microscope electron-beam-induced current (SEM-EBIC) techniques, has been related to the spectral quantum efficiency of Schottky diodes. SPV and EBIC techniques are emphasized as complementary methods for the investigation of bulk photoelectronic properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337269
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  • 6
    Electronic Resource
    Electronic Resource
    Thermally activated carrier transfer and luminescence line shape in self-organized InAs quantum dots (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 3354-3356 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We investigated the temperature dependence (10–180 K) of the photoluminescence (PL) emission spectrum of self-organized InAs/GaAs quantum dots grown under different conditions. The temperature dependence of the PL intensity is determined by two thermally activated processes: (i) quenching due to the escape of carriers from the quantum dots and (ii) carrier transfer between dots via wetting layer states. The existence of different dot families is confirmed by the deconvolution of the spectra in gaussian components with full width half maxima of 20–30 meV. The transfer of excitation is responsible for the sigmoidal temperature dependence of the peak energies of undeconvoluted PL bands. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.117304
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  • 7
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    Photoelectric properties of the metamorphic InAs/InGaAs quantum dot structure at room temperature (2015)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2015-06-06
    Description: We present the study of optical and photoelectric properties of InAs quantum dots (QDs) grown on a metamorphic In 0.15 Ga 0.85 As buffer layer: such nanostructures show efficient light emission in the telecom window at 1.3  μ m (0.95 eV) at room temperature. We prepared a sample with vertical geometry of contacts isolated from the GaAs substrate. The structure is found to be photosensitive in the spectral range above 0.9 eV at room temperature, showing distinctive features in the photovoltage and photocurrent spectra attributed to QDs, InAs wetting layer, and In 0.15 Ga 0.85 As metamorphic buffer, while a drop in the photoelectric signal above 1.36 eV is related to the GaAs layer. No effect of defect centers on the photoelectrical properties is found, although they are observed in the absorption spectrum. We conclude that metamorphic QDs have a low amount of interface-related defects close to the optically active region and charge carriers can be effectively collected into InAs QDs.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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  • 8
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    Broadband light sources based on InAs/InGaAs metamorphic quantum dots (2016)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2016-04-12
    Description: We propose a design for a semiconductor structure emitting broadband light in the infrared, based on InAs quantum dots (QDs) embedded into a metamorphic step-graded In x Ga 1−x As buffer. We developed a model to calculate the metamorphic QD energy levels based on the realistic QD parameters and on the strain-dependent material properties; we validated the results of simulations by comparison with the experimental values. On this basis, we designed a p-i-n heterostructure with a graded index profile toward the realization of an electrically pumped guided wave device. This has been done by adding layers where QDs are embedded in In x Al y Ga 1−x−y As layers, to obtain a symmetric structure from a band profile point of view. To assess the room temperature electro-luminescence emission spectrum under realistic electrical injection conditions, we performed device-level simulations based on a coupled drift-diffusion and QD rate equation model. On the basis of the device simulation results, we conclude that the present proposal is a viable option to realize broadband light-emitting devices.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
    Published by American Institute of Physics (AIP)
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