ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Hole injection in AlGaAs Schottky barriers: Influence on the DX center occupation (1994)

Mosca, R. ; Gombia, E. ; Bosacchi, A. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 75 (1994), S. 5072-5078

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: It is shown that current instabilities, which are frequently observed at low temperatures in forward biased Schottky barriers on n-type AlGaAs, result from changes in the distribution of negatively charged donors (DX centers) near the metal contact. These changes cannot be ascribed to sample-heating effects, but they originate from hole injection in the barrier during forward biasing. The dominant mechanisms which are expected to induce the observed distortions in the DX center profile are (i) direct capture of the injected holes by the DX center and (ii) radiative electron-hole recombination resulting in DX center photoionization. The role of the two mechanisms is discussed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.355750

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit