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  • American Institute of Physics (AIP)  (7)
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  • 1
    Electronic Resource
    Electronic Resource
    A planar method for patterning of high-temperature superconducting films and multilayers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 240-242 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a novel technique for patterning high-temperature superconducting (HTS) film and multilayer device structures. In the process an impurity ion (e.g., Si) is implanted into HTS films through a photoresist mask. The impurity ions convert the irradiated portion of the film into an insulating form by chemical reaction between the ions and the oxygen in the film, without altering the overall crystalline structure of the film. Removal of the photoresist results in a flat surface, which allows the epitaxial growth and implantation patterning of subsequent films so that a complete multilayer device structure can be fabricated. We show in detail the patterning process, as well as the properties of patterned and regrown films. Some simple device structures, such as a vertical contact and a crossover, are demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112613
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  • 2
    Electronic Resource
    Electronic Resource
    Properties of infinite layer Ca1−xSrxCuO2 films oxygen doped by ion implantation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1382-1384 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infinite layer Ca1−xSrxCuO2 (CSCO) films, grown by pulsed laser deposition with x=0.66 and 0.9, were doped by implanting O+ ions with an accelerating energy of 70 keV and a dose of 3×1016 cm−2. The resistivity of the films, in the temperature range 4–200 K, decreased by over two orders of magnitude compared with the original as-grown film. Annealing the as-grown films in an atmosphere of O2 at 500 °C resulted in only a factor of 2 decrease in this temperature range. A magnetic anomaly resembling a diamagnetic transition was observed in the 85–90 K range in implanted films which was not observed in as-grown films. A comparison of the properties of implanted films, before and after annealing, suggest that increased oxygen content alone is not responsible for the observed changes, and thus defect creation resulting from implantation may also play a significant role. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360317
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  • 3
    Electronic Resource
    Electronic Resource
    Properties of Ca1−xSrxCuO2 infinite layer films grown by laser ablation deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3089-3091 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of the infinite layer compound Ca1−xSrxCuO2 have been grown on SrTiO3 substrates by pulsed laser ablation deposition. The properties of the films depend strongly on the processing temperature. Between 650–700 °C the films are epitaxial with the c axis oriented normal to the surface of the substrates. The surfaces of the films are smooth, as indicated by scanning electron microscopy. Films processed at temperatures above 740 or below 600 °C are polycrystalline. X-ray diffraction patterns show that the c-axis lattice constant varies from 3.23 A(ring) for x=0.10, to 3.39 for x=0.66 and 3.43 A(ring) for x=0.90. Electrical measurements show the films to have a semiconducting behavior; no diamagnetic transition was observed in these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356159
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  • 4
    Electronic Resource
    Electronic Resource
    High precision calorimetric apparatus for studying electrolysis reactions (1990)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 61 (1990), S. 1504-1508 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: We have developed a low cost continuous flow labyrinth calorimetric system which attains 0.3% accuracy in absolute energy balance and has a minimum sensitivity of 20 mW. This system is ideally suited to measure the energy balance of electrolytic reactions for output powers ranging from 0 to at least 25 W. By employing a catalyst to recombine the gaseous reaction products, the electrolysis cell can be operated as a closed system, thus eliminating many uncertainties associated with calorimetric measurements on open cell electrolytic processes. Careful calibrations using different electrical heater configurations inside the calorimeter demonstrate insensitivity to temperature gradients and local heating. We present measurements of energy balances of electrolytic reactions using Pd and Pt cathodes in 0.1 M LiOD in D2O as electrolyte. No anomalies are observed in the energy balance of either sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1141161
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  • 5
    Electronic Resource
    Electronic Resource
    Bi-Sr-Ca-Cu-oxide superconducting thin films deposited by dc magnetron sputtering (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1992-1994 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin films of the high-temperature superconductor Bi-Sr-Ca-Cu-oxide were deposited by dc magnetron sputtering onto various substrates. Films deposited on (100) MgO substrates achieved zero resistance between 78 and 82.5 K depending upon the annealing conditions. The best films were produced with a quick post-anneal in oxygen at 870 °C followed by a slower anneal in air at the same temperature. The composition of the sputtered films was uniform within ±3% over an area 40 mm in radius, and films deposited at 15 and 40 mm from the center of deposition both exhibited high Tc transitions.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99598
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  • 6
    Electronic Resource
    Electronic Resource
    Stability of magnesium implanted YBa2Cu3O7 thin films (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 71 (1997), S. 3709-3711 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Magnesium ions were implanted into highly crystalline YBa2Cu3O7 (YBCO) thin films for the purpose of patterning. Films were implanted at doses corresponding to Mg contents of x=0.008, 0.02, and 0.04 in the formula YBa2(Cu1−xMgx)3O7. High temperature annealing (900 °C) of films implanted below the solubility limit was successful in obtaining single phase, Mg doped YBCO films with finite resistivities at 77 K and x-ray (005) rocking curve widths 〈0.15°. An electron probe microanalysis on a film patterned using Mg implantation revealed that lateral diffusion of Mg ions resulting from annealing was limited to only a few microns. The superior quality of a top layer film indicated that Mg ion implantation is suitable for multilayer patterning. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120489
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  • 7
    Electronic Resource
    Electronic Resource
    Inhibition of superconductivity in Y-Ba-Cu-O films by Si ion implantation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3633-3635 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method of converting an oxide Y-Ba-Cu-O (YBCO) film from superconducting into insulating film is presented. With implanted Si ions, the film loses its electrical conductivity and diamagnetism while its crystalline structure is preserved. The process allows the growth of an epitaxial YBCO film on top of the inhibited area, thus providing an effective method of patterning high temperature superconducting multilayer structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110072
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