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Stability of magnesium implanted YBa2Cu3O7 thin films (1997)

Wong, André ; Liang, Ruixing ; Badaye, M. ; [et al.]

Woodbury, NY : American Institute of Physics (AIP)

Applied Physics Letters 71 (1997), S. 3709-3711

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ISSN: 1077-3118

Source: AIP Digital Archive

Topics: Physics

Notes: Magnesium ions were implanted into highly crystalline YBa2Cu3O7 (YBCO) thin films for the purpose of patterning. Films were implanted at doses corresponding to Mg contents of x=0.008, 0.02, and 0.04 in the formula YBa2(Cu1−xMgx)3O7. High temperature annealing (900 °C) of films implanted below the solubility limit was successful in obtaining single phase, Mg doped YBCO films with finite resistivities at 77 K and x-ray (005) rocking curve widths 〈0.15°. An electron probe microanalysis on a film patterned using Mg implantation revealed that lateral diffusion of Mg ions resulting from annealing was limited to only a few microns. The superior quality of a top layer film indicated that Mg ion implantation is suitable for multilayer patterning. © 1997 American Institute of Physics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.120489

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