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  • 1
    Electronic Resource
    Electronic Resource
    Effect of Schottky barrier height on EL2 measurement by deep-level transient spectroscopy (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2469-2472 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A systematic study of EL2 midgap trap in GaAs using deep-level transient spectroscopy (DLTS) is reported for contacts having a large range of Schottky barrier height. The results show that the DLTS signal of EL2 increases as the barrier height rises from 0.62 eV and saturates for barrier height above 0.83 eV. It is found, for the first time, that for Schottky barrier height lower than 0.62 eV the EL2 signal disappears. A model for calculation of the quasi-Fermi level in the depletion region is used to explain the variation and disappearance of the EL2 signal. This model may also apply to other electron traps near midgap.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341655
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  • 2
    Electronic Resource
    Electronic Resource
    A planar method for patterning of high-temperature superconducting films and multilayers (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 65 (1994), S. 240-242 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a novel technique for patterning high-temperature superconducting (HTS) film and multilayer device structures. In the process an impurity ion (e.g., Si) is implanted into HTS films through a photoresist mask. The impurity ions convert the irradiated portion of the film into an insulating form by chemical reaction between the ions and the oxygen in the film, without altering the overall crystalline structure of the film. Removal of the photoresist results in a flat surface, which allows the epitaxial growth and implantation patterning of subsequent films so that a complete multilayer device structure can be fabricated. We show in detail the patterning process, as well as the properties of patterned and regrown films. Some simple device structures, such as a vertical contact and a crossover, are demonstrated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.112613
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  • 3
    Electronic Resource
    Electronic Resource
    Properties of infinite layer Ca1−xSrxCuO2 films oxygen doped by ion implantation (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 1382-1384 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Infinite layer Ca1−xSrxCuO2 (CSCO) films, grown by pulsed laser deposition with x=0.66 and 0.9, were doped by implanting O+ ions with an accelerating energy of 70 keV and a dose of 3×1016 cm−2. The resistivity of the films, in the temperature range 4–200 K, decreased by over two orders of magnitude compared with the original as-grown film. Annealing the as-grown films in an atmosphere of O2 at 500 °C resulted in only a factor of 2 decrease in this temperature range. A magnetic anomaly resembling a diamagnetic transition was observed in the 85–90 K range in implanted films which was not observed in as-grown films. A comparison of the properties of implanted films, before and after annealing, suggest that increased oxygen content alone is not responsible for the observed changes, and thus defect creation resulting from implantation may also play a significant role. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360317
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  • 4
    Electronic Resource
    Electronic Resource
    Properties of Ca1−xSrxCuO2 infinite layer films grown by laser ablation deposition (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3089-3091 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of the infinite layer compound Ca1−xSrxCuO2 have been grown on SrTiO3 substrates by pulsed laser ablation deposition. The properties of the films depend strongly on the processing temperature. Between 650–700 °C the films are epitaxial with the c axis oriented normal to the surface of the substrates. The surfaces of the films are smooth, as indicated by scanning electron microscopy. Films processed at temperatures above 740 or below 600 °C are polycrystalline. X-ray diffraction patterns show that the c-axis lattice constant varies from 3.23 A(ring) for x=0.10, to 3.39 for x=0.66 and 3.43 A(ring) for x=0.90. Electrical measurements show the films to have a semiconducting behavior; no diamagnetic transition was observed in these films.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356159
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  • 5
    Electronic Resource
    Electronic Resource
    Al/Au and Cu/Au bilayer-metal contacts to YBa2Cu3O7−x thin films (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4082-4084 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical contact resistivities of both Al and Cu single layer contacts as well as Cu/Au and Al/Au bilayer metal contacts to YBa2Cu3O7−x (YBCO) thin film have been studied. It was found that aluminum and copper make poor electrical contacts to YBCO due to interface reactions. These contacts have large contact resistivity (10−1–1 Ω cm2), orders of magnitude higher than that of a gold/YBCO contact (10−6 Ω cm2). When an ultrathin Au interlayer (10–30 A(ring)) was inserted between an Al or Cu overlayer and a YBCO film, interface reaction was greatly reduced. The contact resistivities of Al/Au and Cu/Au bilayer-metal contacts dropped by five orders of magnitude when Au interlayer thickness was increased from 0 to 10 A(ring). With the gold interlayer thickness of 15 A(ring), the Al/Au and Cu/Au bilayer-metal contacts reached a minimum contact resistivity, approaching that of a thick single-layer Au metal contact.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350834
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  • 6
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing of YBaCuO thin films deposited on SiO2 substrates (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 1866-1868 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ag/Cu/BaO/Y2O3/Ag layered structures have been formed using electron-beam evaporation on SiO2 substrates, and post-annealed by rapid thermal annealing at different temperatures. After a 960 °C 15-s anneal, the film showed a superconducting onset temperature of 93 K and a zero resistance at 79 K. With a lower-temperature anneal, the film exhibited metallic behavior. On the other hand, for a higher-temperature anneal, silicon was found to diffuse into the film as observed by Auger depth profiling. The Si out-diffusion degraded the superconducting properties of the film.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344363
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  • 7
    Electronic Resource
    Electronic Resource
    Observation of anomalous resistive transition around 160–200 K in Y5Ba6Cu11Ox thin films (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 7348-7350 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A large resistive transition between 160–200 K has been observed in Y5Ba6Cu11Ox thin films. The films were deposited on MgO substrates by electron-beam evaporation and annealed through rapid thermal annealing. With 960–980 °C, 30–60 s RTA, the films showed a resistance drop about one order of magnitude around 160–200 K. This resistive transition was measured reproducibly over many samples. The preparations and measurements of the Y5Ba6Cu11Ox films were similar to those of the YBa2Cu3O7−x films. The x-ray diffraction pattern indicated that the films mainly contain the YBa2Cu3O7−x phase. The films were polycrystalline with grain sizes of a few μm and an average thickness of 0.4 μm.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347592
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  • 8
    Electronic Resource
    Electronic Resource
    Inhibition of superconductivity in YBaCuO films by aluminum ion implantation (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 2717-2719 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the inhibition of superconductivity in high-temperature superconductors oxide films by aluminum ion implantation. Aluminum ions, with doses ranging from 1×1015–1×1016/cm2, were implanted into epitaxial YBa2Cu3O7−x (YBCO) films with an injection energy of 100 keV. Doses of 1×1016/cm2 completely suppressed the diamagnetism of the YBCO film without the need for annealing. Lower doses of 1×1015/cm2 inhibited the superconductivity after low-temperature annealing. The results of the aluminum implantation are compared with previous silicon and boron implantations. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114303
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  • 9
    Electronic Resource
    Electronic Resource
    High Tc superconducting thin films by rapid thermal annealing of Cu/BaO/Y2O3 layered structures (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 2229-2231 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Superconducting thin films of YBaCuO have been formed using rapid thermal annealing of Cu/BaO/Y2 O3 layered structures, which were deposited on MgO substrates by electron beam evaporation. The best film has an onset temperature of 94 K and zero resistance at 84 K. The dependence of the film characteristics and superconducting transition temperature on the annealing conditions has been studied. Auger depth profiling was used to examine the interdiffusion between the film and the MgO substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100510
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  • 10
    Electronic Resource
    Electronic Resource
    Inhibition of superconductivity in Y-Ba-Cu-O films by Si ion implantation (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3633-3635 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A method of converting an oxide Y-Ba-Cu-O (YBCO) film from superconducting into insulating film is presented. With implanted Si ions, the film loses its electrical conductivity and diamagnetism while its crystalline structure is preserved. The process allows the growth of an epitaxial YBCO film on top of the inhibited area, thus providing an effective method of patterning high temperature superconducting multilayer structures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110072
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