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  • 1
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4227-4237 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper presents an analysis of the various properties of the fused interface between GaAs and InP. Interface dislocations are characterized by transmission electron microscopy. Bipolar electrical properties are studied by electron beam induced current measurements and by electrical measurements of fused diode and laser structures. Absorptive optical losses at the interface are estimated from measurements on fused Fabry–Perot resonators and optical scattering losses from interface roughness are estimated by atomic force microscopy. Finally a preliminary mechanical analysis of fracture patterns of fused mesas is presented. The results from our analysis are used to develop guidelines for the fabrication of fused optoelectronic devices. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 2
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaInAsP/InP double heterostructures grown by chemical-beam epitaxy have been used in conjunction with liquid-phase-epitaxial regrowth to fabricate high-performance buried heterostructure lasers operating at a wavelength of 1.5 μm. These lasers show room-temperature threshold currents as low as 12 mA, external quantum efficiencies as high as 0.2 mW/mA per facet, and, in general, linear output power up to ∼10 mW/facet. The 3-dB bandwidth at optimal biasing is about 8 GHz and is believed to be limited by the heatsink stud. The relative intensity noise is low, 〈−150 dB/Hz at 1 GHz for bias currents from 50 mA to above 150 mA.
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 82 (1997), S. 259-269 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A self-consistent two-carrier numerical model for steady-state current flow in n-semi-insulating-n InP structures allows the treatment of avalanche breakdown in addition to trap filling. Band-to-band impact ionization is included as a source term in the continuity equations. Carrier diffusion, nonlinear velocity field characteristics, and Shockley-Read-Hall recombination through the traps are also included, and the effects of each on the field and trapped carrier distributions are calculated. (The progress of trap filling predicted by the traditional drift-only theory is also calculated.) With impact ionization, hole accumulation near the cathode redistributes the space charge and contributes to positive feedback for avalanche breakdown. The model predictions are consistent with experimentally observed catastrophic breakdown and allow the development of design guidelines for avoiding device failure. © 1997 American Institute of Physics.
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3795-3797 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use molecular beam epitaxy to grown coherently strained InGaAs islands on (100) GaAs substrates. The islands show room-temperature photoluminescence at 1.3 μm with a full width at half-maximum of only 28 meV. The integrated photoluminescence intensity is comparable to that of a quantum well. The islands are formed by depositing 22 monolayers of In0.3Ga0.7As with alternating beams of In, Ga, and As2. Atomic force microscopy measurements show that the islands are ellipsoidal sections with an average peak height of 24 nm. The intersection of the islands with the (100) plane is an ellipse whose major axis is along [011¯] and has a mean length of 54 nm, and whose minor axis is along [011] and has a mean length of 36 nm. The islands form a dense array with an areal coverage of about 40%. © 1995 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1629-1631 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A theoretical comparison of the operating characteristics of p-i-n GaAs/AlGaAs photodetectors incorporating either bulk or quantum wire absorbing regions is presented in an effort to realistically compare both the bandwidth and the quantum efficiency of these devices. Devices utilizing quantum wire absorbing regions may have enhanced operating characteristics assuming increased absorption and saturated carrier drift velocities can be realized in these quantized structures.
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  • 6
    Electronic Resource
    Electronic Resource
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 98 (1993), S. 6504-6509 
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: We present the results of time-resolved luminescence studies of poly[2-methoxy, 5-(2'-ethyl-hexyloxy)-p-phenylene-vinylene] (MEH-PPV), as a pure film, in solution, in a gel formed by a network of ultrahigh molecular weight polyethylene (UHMW-PE), and in a blend with UHMW-PE. The luminescence has a characteristic lifetime of 200–300 ps at room temperature, increasing to 500–700 ps when the materials are cooled to 80 K; the decay time is approximately the same for all the physical forms of the material (solution, film, gel, blend). The relatively short lifetimes, compared to intrinsic values calculated from absorption and emission spectra, and the observed temperature dependence indicate that the luminescence decay is quenched by nonradiative processes. The time decay of the photoluminescence deviates from a single exponential for most forms of the MEH-PPV. Best fits to stretched exponential and double exponential expressions are presented. Steady state photoluminescence spectra and integrated luminescence vs pump intensity data are presented in order to establish which of the possible mechanisms are most important.
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  • 7
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 963-965 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Pulses shorter than 4 ps (deconvolved) have been obtained by optically gain switching a GaAs multiple quantum well vertical-cavity surface-emitting laser with a picosecond dye laser. Pulse width and relative peak delay were measured as a function of pump power. A theoretical model of the large signal response agrees well with the measured data. The model predicts the minimum achievable pulse width and pulse delay for this device structure. Experimental results and calculated values indicate that very high modulation rates are possible with vertical-cavity surface-emitting lasers.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 2156-2158 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Ultrafast graded double-heterostructure GaInAs/InP p-i-n photodiodes grown by gas source molecular beam epitaxy have been fabricated on an InP semi-insulating substrate. The graded band-gap layers and the double heterostructure reduce carrier trapping effects and diffusion current and the resulting response of a 5 μm×5 μm device was measured by electro-optic sampling to be 5 ps full width at half maximum (FWHM). The deconvolved impulse response is 3.8 ps FWHM.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 58 (1991), S. 1244-1246 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The intensity noise of strained InxGa1−xAs/InP multiple quantum well (MQW) lasers is measured for three types of strain: tensile strain (x=0.48), no strain (x=0.53), and compressive strain (x=0.65). From a comparison between the measured noise power spectral density and the theoretical one, the resonance frequency and the carrier damping factor of each type of lasers are calculated. Although compressive strained MQW lasers show abot 10% increase in resonance frequency compared to those of tensile strained and unstrained lasers, this increase is smaller than theoretically predicted. Most important, all three types of MQW lasers show about two to three times higher nonlinear gain saturation and lower maximum bandwidth than conventional double-heterostructure lasers. A solution to reduce this high damping is also discussed.
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 111-113 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe the first results of hybrid mode locking combining both active and passive mode locking of a semiconductor laser. These functions are integrated into a monolithic device with a 1.3 μm GaInAsP gain region, an active waveguide, and a saturable absorber. The devices have low threshold currents, and exhibit hysteresis in their light/current characteristics. The long integrated waveguides allow mode locking at a repetition rate of 15 GHz without the need for an external cavity. Pulse widths as short as 1.4 ps have been demonstrated using the combined effects of active and passive mode locking.
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