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  • 1
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    Undulator beamline of the Brockhouse sector at the Canadian Light Source (2014)
    American Institute of Physics (AIP)
    Details
    Publication Date: 2014-08-05
    Description: The Brockhouse project at the Canadian Light Source plans the construction of three beamlines, two wiggler beamlines, and one undulator beamline, that will be dedicated to x-ray diffraction and scattering. In this work, we will describe the undulator beamline main components and performance parameters, obtained from ray tracing using XOP-SHADOW codes. The undulator beamline will operate from 4.95 to 21 keV, using a 20 mm period hybrid undulator placed upstream of the wiggler in the same straight section. The beamline optics design was developed in cooperation with the Brazilian Synchrotron - LNLS. The beamline will have a double crystal monochromator with the options of Si(111) or Si(311) crystal pairs followed by two mirrors in the KB configuration to focus the beam at the sample position. The high brilliance of the undulator source will produce a very high flux of ∼10 13 photons/s and high energy resolution into a small focus of 170 μm horizontal and 20-60 μm vertical, depending on the optical configuration and energy chosen. Two multi-axis goniometer experimental stations with area detectors and analyzers are foreseen to enable diffraction, resonant and inelastic scattering experiments, and SAXS/WAXS experiments with high resolution and time resolving capabilities.
    Print ISSN: 0034-6748
    Electronic ISSN: 1089-7623
    Topics: Electrical Engineering, Measurement and Control Technology , Physics
    Published by American Institute of Physics (AIP)
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  • 2
    Electronic Resource
    Electronic Resource
    Binary diffusion coefficients for the systems He4–He3, He4–D2, He4–H2, He3–D2, He3–H2, and H2–D2 from 273 to 320 K: Tests of several potential functions (1987)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 87 (1987), S. 3591-3593 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: Diffusion coefficients are reported for the six binary systems which can be formed from the components He4, He3, D2, and H2. The results are used to test the assumption that the potential function for a given system is independent of the isotopic nature of each component.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.452953
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  • 3
    Electronic Resource
    Electronic Resource
    Chromophore dependence of intramolecular vibrational relaxation: Si–H stretch second overtone versus C–H stretch first overtone in methylsilane (1997)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 107 (1997), S. 6549-6561 
    Details
    ISSN: 1089-7690
    Source: AIP Digital Archive
    Topics: Physics , Chemistry and Pharmacology
    Notes: The intramolecular vibrational relaxation (IVR) of an excited Si–H stretch (second overtone) and C–H stretch (first overtone) in methylsilane has been examined by eigenstate resolved infrared spectroscopy. The experiment probes a molecular beam produced in a supersonic expansion, excited by a laser in a power buildup cavity, and detected by a liquid helium cooled silicon bolometer. The Si–H stretch [local mode (3,0,0), both A and E combinations] is compared with the nearly isoenergetic C–H stretch [predominantly the 2ν70 band]. With the calculated density of states almost unchanged, the two modes exhibit very different IVR behavior, which is quantified in terms of the lifetime of the bright states and the coupling between the bright states and the dark states. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.474893
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  • 4
    Electronic Resource
    Electronic Resource
    Persistent photoquenching and anion antisite defects in neutron-irradiated GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 907-909 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A potential origin for the reported discrepancies on the low-temperature photosensitivity of particle-induced anion antisites in GaAs is revealed by a systematic study of the relative fraction of photoquenchable paramagnetic As4+Ga centers as a function of neutron fluence and annealing temperature. The electron paramagnetic resonance data show that the As4+Ga centers can be split into two subsets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100804
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  • 5
    Electronic Resource
    Electronic Resource
    Dispersion relation, electron and hole effective masses in InxGa1−xAs single quantum wells (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1481-1485 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on optical and electrical properties of modulation doped InxGa1−xAs/InP single quantum wells in the composition range 0.56≤x≤0.79. Cyclotron resonance, contactless Shubnikov–de Haas and magnetophotoluminescence experiments are used to obtain two dimensional carrier densities, effective masses of electrons and holes and scattering times. We present data which give evidence for zero magnetic field spin splitting. The dispersion relation for electrons and holes is presented. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360988
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  • 6
    Electronic Resource
    Electronic Resource
    Application of microwave detection of the Shubnikov–de Haas effect in two-dimensional systems (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 73 (1993), S. 7533-7542 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Microwave detection of the Shubnikov–de Haas (SdH) effect as a contact-free characterization technique for different types of two-dimensional semiconductor structures is explored in the low magnetic field region. The detection technique and the data analysis are described. The character and relevance of the single-particle relaxation time that can be detected by this technique are distinguished from the usual transport scattering time. The measured values of the carrier concentration and single-particle relaxation time agree with electrical measurements, while the problem of making contacts on the structure is avoided. Uncertainties in the analysis for the single-particle relaxation time are discussed. Cyclotron resonance, optically detected cyclotron resonance, and magneto-photoluminescence are applied as other contact-free techniques on the same samples. The results and suitability of these techniques are compared with the microwave detection of the SdH effect.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354001
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence study of the 1.047 eV emission in GaN (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 3214-3218 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We use photoluminescence to study residual transition metal contaminants in GaN layers, which are grown by the sandwich technique either on 6H-SiC substrate or on sapphire substrate. We observe three no-phonon lines in the near infrared optical region at 1.3 eV, 1.19 eV, and 1.047 eV caused by 3d transition metals. The appearance of GaN related host modes in the phonon sideband of these emissions proves that the luminescence centers are incorporated in the hexagonal GaN layers. In this paper we especially focus on the luminescence band with the no-phonon line at 1.047 eV. Temperature dependent photoluminescence measurements reveal an excited state splitting of 8 meV. In photoluminescence excitation spectroscopy we observe a further excited state at 1.6 eV with a fine structure splitting. The appearance of this excited state in the n-type samples gives evidence that the defect must already exist in its luminescent charge state without illumination. The experimental results on the 1.047 eV emission fit to a 4T2(F)→4A2(F) internal electronic transition of a transition metal with a 3d7 electronic configuration. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361266
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  • 8
    Electronic Resource
    Electronic Resource
    Excitonic line broadening in bulk grown Cd1−xZnxTe (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 4523-4526 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cd1−xZnxTe crystals grown by the traveling heater method have been investigated by low-temperature photoluminescence. The excitonic energy gap as a function of the alloy composition was determined over the complete range of x=0 to x=1. The composition dependent broadening of the neutral acceptor bound exciton (A 0X) line was determined. Theoretical calculations, where the A 0X exciton is treated within the pseudodonor model and the conduction/valence band offset between CdTe and ZnTe is taken into account, give close agreement with the experiment for x≤0.77. Evidence for clustering of Zn atoms is found for x≥0.77.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350798
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical, magnetic circular dichroism and Raman spectroscopic investigations on the EK2 double acceptor (78/203 meV) in GaAs (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 1454-1462 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical and optical properties of liquid encapsulated Czochralski grown, Ga-rich (melt composed of 55% Ga and 45% As), p-type GaAs were studied by the Hall effect, capacitance-voltage measurements, magnetic circular dichroism, optically detected electron spin resonance, deep level transient spectroscopy (DLTS), and Raman spectroscopy. Two levels with ionization energies of 78 and 203 meV above the valence band edge were examined and fitted to the singly and doubly charged ground states of a double acceptor which is designated an EK2 center. The Raman scattering cross sections for electronic excitations were determined from the defect concentrations measured by DLTS. The EK2 center is electrically passivated via a remote microwave hydrogen plasma technique. It can be reactivated by heat treatments with an activation energy of Ea=1.4 eV. The concentrations of the two levels were equal to each other in four as-grown samples, in samples following passivation, and at all stages during the subsequent reactivation. The observations are inconsistent with previous suggestions that the levels are due to two separate defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347287
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  • 10
    Electronic Resource
    Electronic Resource
    EL2 and anion antisite defects in plastically deformed GaAs (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3381-3385 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on optical absorption its magnetic circular dichroism (MCD), optically detected electron spin-resonance (ODESR), and electron nuclear double-resonance (ODENDOR) investigations of plastically deformed semi-insulating GaAs. By plastic deformation arsenic antisite defects are created which show a similar ODESR pattern as EL2 defects present in the material prior to deformation. EL2 and the new antisite defects can be distinguished by their different spectral dependence of the MCD. The new antisite defect formation starts at 2% deformation and is investigated as a function of the degree of deformation; additional EL2 defects are not created. With ODENDOR it is shown that the atomistic structure of the EL2 defects changes in the deformed GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346341
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