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  • American Institute of Physics (AIP)  (4)
  • 1985-1989  (4)
Collection
Publisher
Years
Year
  • 1
    Electronic Resource
    Electronic Resource
    Infrared absorption of Ir and IrSi thin films on Si substrates (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 310-312 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The infrared absorption of Ir and IrSi thin films on Si substrates has been determined by transmission and reflection measurements over the wavelength range 2.5–25 μm. Detailed analysis of the dependence of absorption at 4 μm on film thickness indicates that a thin boundary layer with lower absorption than Ir is present at the Ir/Si interface and that such a layer with lower absorption than IrSi is present at the IrSi/Si interface. The existence of the boundary layers has been confirmed by the detection of oxygen at the interfaces by Auger analysis. Absorption and Auger measurements give no evidence of boundary layer formation at Pt/Si or PtSi/Si interfaces.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100995
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    Paper (German National Licenses)
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  • 2
    Electronic Resource
    Electronic Resource
    Zone-melting recrystallization with enhanced radiative heating for preparation of subboundary-free silicon-on-insulator thin films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1238-1240 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A new zone-melting-recrystallization (ZMR) configuration with enhanced radiative heating has been developed for preparing silicon-on-insulator (SOI) films. With this configuration, in which the sample is positioned above the movable heater with the SOI film facing downward, subboundary-free 0.5-μm-thick SOI films are obtained over a much wider range of experimental parameters than with the conventional ZMR configuration. The characterization of these films by defect etching, optical microscopy, and transmission electron microscopy shows that the principal defects are isolated threading dislocations with a density of ∼106 cm−2. It should be possible to improve the material quality still further by optimizing experimental conditions for the new configuration.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102465
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    Paper (German National Licenses)
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization and entrainment of subboundaries and defect trails in zone-melting-recrystallized Si films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 1152-1160 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied the morphology and crystallographic angular discontinuities of subboundaries and defect trails in zone-melting-recrystallized Si films. These subboundaries and defect trails, which originate at the interior corners of the faceted solidification front, are classified into seven types. Evidence is presented that in-plane stress due to temperature gradients plays a major role in causing such defects. Various schemes for entraining subboundaries and defect trails are described.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337360
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  • 4
    Electronic Resource
    Electronic Resource
    Selective tungsten silicide formation by ion-beam mixing and rapid thermal annealing (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 57 (1985), S. 1890-1894 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Smooth layers of tungsten silicide have been formed on silicon substrates by deposition of a tungsten film, As+ ion implantation through the film to produce ion-beam mixing, and rapid thermal annealing. This process has been used to form tungsten silicide selectively in patterned openings etched in the SiO2 film on oxidized Si wafers, without lateral silicide growth. Rapid thermal annealing results in the activation of the As implanted in the Si substrate, without significant redistribution, to form shallow n+-p junctions with good electrical properties.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.334421
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