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  • American Institute of Physics (AIP)  (188)
  • Oxford University Press  (101)
  • 2000-2004  (107)
  • 1990-1994  (182)
  • 1
    Digitale Medien
    Digitale Medien
    Surface and domain structures of ferroelectric crystals studied with scanning force microscopy (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 7461-7471 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: The understanding of the phenomena of ferroelectricity requires profound knowledge of the ferroelectric domain structure. In this paper we report on the progress of studying ferroelectric domains and domain walls with scanning force microscopy (SFM). Domains and domain walls of ferroelectric crystals of guanidinium aluminum sulfate hexahydrate (GASH) are imaged with SFM. Two sets of complementary results are obtained depending on the operation mode of the instrument. In the non-contact imaging mode (attractive force regime), domain walls are imaged. In the contact imaging mode (repulsive force regime) in addition to the domain wall structure, information about the polarity of the domains is obtained. In these latter images, the opposing contrast of the ferroelectric positive and negative domains is superimposed on the GASH cleavage structure. The imaging mechanism of the contact and noncontact modes are discussed. Corroborating scanning electron microscopy images are presented as well.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.354969
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  • 2
    Unbekannt
    Studies in classical history and society (2002)
    Oxford [England] ; New York : Oxford University Press
    American classical studies  
    Details
    Schlagwort(e): Greece, History, To 146 B.C. ; Grèce, Histoire, Jusqu'à 146 av. J.-C. ; Rome, Histoire. ; Rome, History. ; Civilisation ancienne. ; Civilization, Classical.
    Seiten: xi, 151 p.
    ISBN: 0-19-518490-4
    URL: http://www.netLibrary.com/urlapi.asp?action=summary&v=1&bookid=121005
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  • 3
    Unbekannt
    Social movements : identity, culture, and the state (2002)
    Oxford ; New York : Oxford University Press
    Details
    Schlagwort(e): Mouvements sociaux. ; Social movements.
    Notizen: pt. I. Introduction. Opportunities and identities: bridge-building in the study of social movements / David S. Meyer -- pt. II. States and policies. State repression and democracy protest in three southeast Asian countries / Vincent Boudreau -- Mobilization on the South African gold mines / T. Dunbar Moodie -- Multiple meditations: the state and the women's movements in India / Manisha Desai -- The contradictions of gay ethnicity: forging identity in Vermont / Mary Bernstein -- Creating social change: lessons from the civil rights movement / Kenneth T. Andrews -- pt. III. Organization and strategies. The "meso" in social movement research / Suzanne Staggenborg -- Strategizing and the sense of context: reflections on the first two weeks of the Liverpool docks lockout, September-October 1995 / Colin Barker and Michael Lavalette -- Factions and the continuity of political challengers / Mildred A. Schwartz -- More than one feminism: organizational structure and the construction of collective identity / Jo Reger -- The development of individual identity and consciousness among movements of the left and right / Rebecca E. Klatch -- pt. IV. Collective identities, discourse, and culture. Toward a more dialogic analysis of social movement culture / Marc W. Steinberg -- Materialist feminist discourse analysis and social movement research: mapping the changing context for "community control" / Nancy A. Naples -- From the "beloved community" to "family values": religious language, symbolic repertoires, and democratic culture / Rhys H. Williams -- External political change, collective identities, and participation in social movement organizations / Belinda Robnett -- pt. V. Conclusion. Meaning and structure in social movements / Nancy Whittier
    Seiten: xvi, 366 p.
    ISBN: 0-19-530277-X
    URL: http://www.netLibrary.com/urlapi.asp?action=summary&v=1&bookid=129231
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  • 4
    Digitale Medien
    Digitale Medien
    Coarse graining of nonbonded inter-particle potentials using automatic simplex optimization to fit structural properties (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 6264-6275 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: We implemented a coarse-graining procedure to construct mesoscopic models of complex molecules. The final aim is to obtain better results on properties depending on slow modes of the molecules. Therefore the number of particles considered in molecular dynamics simulations is reduced while conserving as many properties of the original substance as possible. We address the problem of finding nonbonded interaction parameters which reproduce structural properties from experiment or atomistic simulations. The approach consists of optimizing automatically nonbonded parameters using the simplex algorithm to fit structural properties like the radial distribution function as target functions. Moreover, any mix of structural and thermodynamic properties can be included in the target function. Different spherically symmetric inter-particle potentials are discussed. Besides demonstrating the method for Lennard-Jones liquids, it is applied to several more complex molecular liquids such as diphenyl carbonate, tetrahydrofurane, and monomers of poly(isoprene). © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.1308542
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  • 5
    Digitale Medien
    Digitale Medien
    A joint theoretical–experimental investigation of the lower bound states of the NO(X 2Π)–Ar complex (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 113 (2000), S. 73-85 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: In an extension of recent work [Y. Kim, K. Patton, J. Fleniken, and H. Meyer, Chem. Phys. Lett. 318, 522 (2000)], overtone pumping followed by resonantly enhanced multiphoton ionization (REMPI) detection is used to record spectra corresponding to excitation of the lowest five bend–stretch vibrational levels of the NO(X 2Π,v=2)–Ar complex. High-quality ab initio potential energy surfaces, coupled-electron-pair (CEPA) and coupled cluster single double triple [CCSD(T)], are used to predict the positions of these same five states, but in the NO(X 2Π,v=0)–Ar complex. The vibrational wave functions and basis set expansion coefficients, determined within the adiabatic bender model, are then used to simulate the observed spectrum for excitation of the NO(X 2Π, v=2)–Ar complex. The overall position and rotational substructure matches the experiment extremely well, particularly when the simulation is based on the presumably more accurate CCSD(T) potential energy surfaces. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.481776
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  • 6
    Digitale Medien
    Digitale Medien
    Schottky diodes with high series resistance: Limitations of forward I-V methods (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7973-7984 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Some methods have been proposed to deduce the value of Schottky parameters from forward I-V characteristic even in the presence of a large series resistance. In this paper, some well-known methods have been applied to experimental data of a real diode and to computer calculated curves. A comparison is made between these methods and the standard procedure. Some indications are given on the validity and the main limitations of all these techniques. © 1994 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357909
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  • 7
    Digitale Medien
    Digitale Medien
    Hole defects in molecular beam epitaxially grown p-GaAs introduced by alpha irradiation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1222-1224 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: Epitaxial aluminum Schottky barrier diodes on molecular beam epitaxially grown p-GaAs with a free carrier density of 2×1016 cm−3 were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radio nuclide. For the first time, the radiation induced hole defects are characterized using conventional deep level transient spectroscopy (DLTS). The introduction rates and DLTS "signatures'' of three prominent radiation induced defects Hα1, Hα4, and Hα5, situated 0.08, 0.20, and 0.30 eV above the valence band, respectively, are calculated and compared to those of similar defects introduced during electron irradiation.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356460
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  • 8
    Digitale Medien
    Digitale Medien
    Infrared electroabsorption modulation at normal incidence in asymmetrically stepped AlSb/InAs/GaSb/AlSb quantum wells (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 92-96 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: A normal-incidence modulation mechanism is proposed which uses the Stark effect to induce Γ-L transitions in asymmetrically stepped AlSb/InAs/GaSb/AlSb quantum wells (QWs). A significant feature of this structure is the unusual band alignments which localize two deep wells for the Γ and L bands in adjacent layers, i.e., the Γ-valley minimum is in the InAs while the L-valley minimum is in the GaSb. In contrast to a square QW, where the Stark shifts for both Γ and L subbands are in the same direction, the two step wells for Γ and L valleys in the proposed structure are oppositely biased in the presence of an electric field. Therefore, the first Γ and L subbands move toward each other, making the Γ-L crossover occur more efficiently. Near this point, most of the Γ electrons transfer to the L valleys, where they are allowed to make intersubband transitions under normally incident radiation. As a result, the device switches from being transparent to normal-incidence light to strongly absorbing it. The calculations indicate that excellent on/off ratios can be achieved in this structure operating at T≤150 K with electric fields on the order of ∼100 kV/cm for any infrared wavelength within the range of 3–20 μm.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.357065
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  • 9
    Digitale Medien
    Digitale Medien
    Reactive-ion-beam-sputtered WNx films on silicon: Growth mode and electrical properties (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 3900-3907 
    Details
    ISSN: 1089-7550
    Quelle: AIP Digital Archive
    Thema: Physik
    Notizen: WN films were deposited on clean Si(100) substrates via reactive-ion-beam sputtering a W target by a nitrogen ion beam in an UHV system. The energy of the incident ions varied in the range of 0.250 to 3 keV. The growth mode dependence of the films on the nitrogen ion energy was studied by in situ Auger electron spectroscopy measured as a function of coverage. Nitridation of the Si at the first stage of deposition has been found. This nitridation was more pronounced for the lower N beam energies, and minimal for the 2 keV beam. A similar trend was observed for the bulk film composition. In a complementary way, the dependence of electrical properties of the WN/Si junctions on the nitrogen energy has been studied. A higher barrier height on p-type Si than on n-type Si was found, unlike the expectation for regular metallization of W and its compounds on Si. The electrical characteristics can be attributed to the deposition technique. For the low-energy beams, the formation of the interfacial layer was probably dominating, while at higher energies radiation damage and possibly also N implantation played a more important role.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.356035
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  • 10
    Digitale Medien
    Digitale Medien
    A numerical study on the performance of the multiconfiguration time-dependent Hartree method for density operators (2000)
    College Park, Md. : American Institute of Physics (AIP)
    The Journal of Chemical Physics 112 (2000), S. 10718-10729 
    Details
    ISSN: 1089-7690
    Quelle: AIP Digital Archive
    Thema: Physik , Chemie und Pharmazie
    Notizen: A numerical study based on the multiconfiguration time-dependent Hartree (MCTDH) method for the propagation of density operators is presented. Within the MCTDH framework, there exist two types of expansions of the density operator which employ different kinds of so-called single-particle density operators. The latter may either represent Hermitian operators (type I), or else ket-bra products of so-called single-particle functions (type II). The performance of these two types of representations is tested on three models for closed and open system dynamics. The open dynamics is induced for each system by Lindblad-type dissipation operators. We find that the MCTDH representation of type I is most efficient if the coupling between the degrees of freedom is weak, but if the temperature of the initial state and/or the strength of the dissipation is moderate. On the other hand, for strong coupling between the degrees of freedom, but for lower temperatures and for weak dissipation type II is more efficient. Furthermore, considering the open dynamics of the systems both types of MCTDH density operators can be very efficiently used to calculate absorption spectra. The Lindblad-type dissipation operator is shown, however, to capture only partially the effects of a real environment. © 2000 American Institute of Physics.
    Materialart: Digitale Medien
    URL: http://dx.doi.org/10.1063/1.481716
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