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  • 1
    Electronic Resource
    Electronic Resource
    Deep-level transient spectroscopy detection of defects created in epitaxial GaAs after electron-beam metallization (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2422-2425 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Previously, defects formed during the electron-beam metallization process have been observed both in Si and GaAs. In the present study the defects caused during EB metallization of different metals on undoped (ND−NA =1015/cm3) epitaxial GaAs layers were characterized using deep-level transient spectroscopy. Although the maximum energy of the electrons causing the defects was only 3.6 keV, the results indicated that the properties of these defects closely correspond with those of high-energy (1 MeV) electron irradiation-induced defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341676
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  • 2
    Electronic Resource
    Electronic Resource
    Electrical characterization of defects introduced in p-Si1−xGex during electron-beam deposition of Sc Schottky barrier diodes (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 1069-1071 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Scandium (Sc) Schottky barrier diodes were fabricated by electron-beam (EB) deposition on epitaxially grown p-Si1−xGex strained films with x=0.0–0.2. The EB deposition was performed either with or without shielding the Si1−xGex samples. The barrier height and the defects introduced during EB deposition have been investigated as a function of Ge composition. Our results showed that the barrier height decreased as the band gap changed with increasing Ge content. The defect properties were studied with deep-level transient spectroscopy. The most prominent defect observed in p-Si was a hole trap H(0.53) at Eν+0.53 eV. Increasing the Ge content led to a decrease in the activation energy of this defect and this decrease followed the same trend as the band-gap variation, suggesting that the main defect detected in p-Si1−xGex is the same as that observed in p-Si. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.120967
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  • 3
    Electronic Resource
    Electronic Resource
    Electronic properties of defects introduced in p-type Si1−xGex during ion etching (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 256-258 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have investigated the electronic properties of defects introduced in boron-doped, strained p-type Si1−xGex (x=0–0.15) during 0.75-keV argon Ar-ion etching, by deep level transient spectroscopy. These defects are compared to those introduced during e-beam deposition of metal contacts and after 5.4-MeV alpha-particle irradiation. Defect HAr1d, detected in p-Si, has similar electronic properties as He2 and Ha15 detected after electron and alpha-particle irradiation, respectively. The variation in activation energy of HAr1d with Ge fraction was studied, and it was found to follow the same change as the band gap of strained Si1−xGex. This defect has a concentration, which decreases sharply from the metal–semiconductor surface. It also has an activation energy, which depends on the Ge content and is pinned to the conduction band. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121772
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  • 4
    Electronic Resource
    Electronic Resource
    Deep level transient spectroscopy characterization of 1 keV He, Ne, and Ar ion bombarded, epitaxially grown n-Si (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 2565-2570 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Deep level transient spectroscopy has been used to investigate the electronic properties and isochronal annealing behavior of defects formed in epitaxially grown n-Si by 1 keV He-, Ne-, and Ar-ion bombardment. Similarities between peaks found for the different bombardment gases suggested that they were from structurally related defects. Two families of such related defects were observed in the unannealed samples. Annealing data revealed additional peaks and enabled another defect family formed above 400 °C to be identified. The energy levels and capture cross sections have been determined for three new families of related defects. The defect families were presumed to be either complex vacancy clusters or hydrogen related. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368439
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  • 5
    Electronic Resource
    Electronic Resource
    Electrical characterization of neutron irradiation induced defects in undoped epitaxially grown n-GaAs (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 4339-4342 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Undoped n-GaAs, grown by organometallic vapor phase epitaxy, was irradiated with neutrons from a clinical p(66)/Be(40) source for a range of fluences. Deep level transient spectroscopy (DLTS), employing Pd Schottky barrier diodes, indicated that four electron traps, En1, En2, En4, and En5, with energy levels at 0.04, 0.14, 0.36, and 0.66 eV, respectively, below the conduction band were created during neutron radiation. Their introduction rates varied from 1 cm−1 for the En1 to 11 cm−1 for the En5. It was found that the En1, En2, and En4 defects have DLTS "signatures'' similar to the E1, E2, and E3 point defects introduced during high energy electron irradiation, indicating their point defect nature. The En5 has a very large capture cross section, its emission rate exhibits a strong electric field dependence, and there are indications that it has a band-like energy distribution, that results in a broad DLTS peak. We speculate that this trap is related to the presence of extended defects in the neutron irradiated GaAs.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354399
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  • 6
    Electronic Resource
    Electronic Resource
    Hole defects in molecular beam epitaxially grown p-GaAs introduced by alpha irradiation (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 1222-1224 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial aluminum Schottky barrier diodes on molecular beam epitaxially grown p-GaAs with a free carrier density of 2×1016 cm−3 were irradiated with alpha particles at room temperature using an americium-241 (Am-241) radio nuclide. For the first time, the radiation induced hole defects are characterized using conventional deep level transient spectroscopy (DLTS). The introduction rates and DLTS "signatures'' of three prominent radiation induced defects Hα1, Hα4, and Hα5, situated 0.08, 0.20, and 0.30 eV above the valence band, respectively, are calculated and compared to those of similar defects introduced during electron irradiation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356460
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  • 7
    Electronic Resource
    Electronic Resource
    Considerations for capacitance DLTS measurements using a lock-in amplifier (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 1597-1603 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: An outline is presented of how to numerically account for the gate-off time, consisting of both the pulse width and delay times, when performing lock-in amplifier based capacitance deep level transient spectroscopy (DLTS) measurements at frequencies up to 2000 Hz. This frequency is about ten times higher than the maximum frequency normally used for these measurements when using 1-MHz capacitance meters. Further, the relationship between the frequency, pulse width, and delay time was established for which the commonly used value of the normalized thermal emission decay time constant τmax/T0 may be assumed constant (=0.424) without introducing observable errors in the defect parameters calculated from DLTS data. Because the effect of measuring at higher frequencies is to shift the DLTS peaks to higher temperatures, it was found that when using frequencies between 50 and 2000 Hz, defects such as the E2 level in radiation-damaged GaAs, which are usually observed below 77 K at frequencies below 50 Hz, may be conveniently and accurately characterized by capacitance DLTS at temperatures above that of liquid nitrogen.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1138537
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  • 8
    Electronic Resource
    Electronic Resource
    Modified sample holder for low-temperature deep-level transient spectroscopy, current-voltage and capacitance-voltage measurements (1992)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 63 (1992), S. 2101-2102 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: This note describes the design, construction, and test results of a modified sample holder used during low-temperature deep-level transient spectroscopy, current-voltage and capacitance-voltage measurements. This improved sample holder allows temperature scan rates of up to 6 K/min with a temperature shift of less than 1 K. High electrical isolation makes this sample holder also suitable for low-temperature current-voltage and capacitance-voltage measurements.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1143175
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  • 9
    Electronic Resource
    Electronic Resource
    Sample manipulator for Auger angular dependence studies (1986)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 57 (1986), S. 2892-2893 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A modification to a commercial sample manipulator is described by which the angle between the incoming beam direction and the normal of the sample, as well as the angle of rotation about the normal, can be changed by 60° and 360°, respectively, from the outside of an UHV analysis chamber.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1139011
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  • 10
    Electronic Resource
    Electronic Resource
    Single scan defect identification by deep level transient spectroscopy using a two-phase lock-in amplifier (IQ-DLTS) (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 973-976 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A simple method of analyzing the deep level transient spectroscopy (DLTS) transient signal by recording its in-phase (I) and quadrature (Q) DLTS spectra using a two-phase lock-in amplifier with a sine wave mixing function, IQ-DLTS, is presented. Measurement of the peak positions on the I and Q spectra, which are simultaneously recorded during a single temperature scan, facilitates the calculation of the defect's activation energy Et, and capture cross section σt, which are required for its identification. It was found that the Et values obtained when analyzing proton implantation-induced defects in GaAs were within 5% of those determined from the conventional DLTS Arrhenius plots.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.340047
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