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  • 1990-1994  (49)
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  • 1
    Electronic Resource
    Electronic Resource
    Auger recombination in bulk and quantum well InGaAs (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 913-915 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the determination of Auger recombination coefficients in bulk and quantum well InGaAs by time-resolved luminescence measurements. In bulk InGaAs the coefficient is C=3.2×10−28 cm6/s and has the temperature dependence of the valence-band Auger effect involving the split-off valence band. In 11 nm quantum well InGaAs we find C=0.9×10−28 cm6/s, independent of temperature. The Auger coefficient decreases slightly with decreasing well width.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103175
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  • 2
    Electronic Resource
    Electronic Resource
    Observation of quantum well polarization effects in the photocurrent of multilayer diodes (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 583-585 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Large electrical polarization effects in the time photoresponse of multilayer heterostructure diodes have been observed. This phenomenon manifests itself in a displacement current spike synchronous to a dark–light transition and in an opposite spike in the light–dark one. The effect is associated with the pileup and spatial separation of photogenerated electrons and holes in the wells in the space-charge region of the diode. At a particular forward bias voltage, the conduction photocurrent is eliminated, allowing accurate measurements of this phenomenon.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345200
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  • 3
    Electronic Resource
    Electronic Resource
    Reactive chemical beam etching of InP inside a chemical beam epitaxial growth chamber using phosphorus trichloride (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2084-2086 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have extended the capability and versatility of a chemical beam epitaxial (CBE) system by demonstrating reactive chemical beam etching (RCBE) of InP using phosphorus trichloride (PCl3) as the gaseous etching beam injected directly into the growth chamber. This permits instant switching from etching to growth (and vice versa) in the same run for the first time in CBE. We investigate RCBE of InP at various substrate temperatures between ∼400 and 580 °C, under different PCl3 fluences, and etching conditions. Excellent surface morphology was obtained at high temperatures ((approximately-greater-than)530–570 °C) and under an etching rate of (approximately-less-than)6 A(ring)/s. We also found that upon addition of trimethylindium flow equivalent to a growth rate of 1 A(ring)/s during RCBE a dramatic improvement in surface morphology was obtained even at a high net etching rate of 10 A(ring)/s. The surface morphology obtained under such conditions is indistinguishable from that of the original substrate surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109486
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  • 4
    Electronic Resource
    Electronic Resource
    Low-threshold and high-temperature operation of 1.55-μm self-aligned ridge-waveguide multiple-quantum-well lasers grown by chemical-beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3381-3383 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We describe a low-threshold, low-internal-loss, multiple-quantum-well ridge waveguide laser operating at 1.55-μm wavelength and grown by chemical-beam epitaxy. With a high-reflection coating applied to one facet, it can operate CW to 100 °C. The laser exhibits single transverse-mode output and 6-GHz bandwidth. Processing utilizes a combination of self-aligned reactive-ion etching and wet chemical etching. Nearly 100% threshold and quantum efficiency yield of devices in bar form was obtained as a result of the excellent material uniformity, precision process control, and process uniformity over the wafer. This suggests that the present laser may be a potential candidate for low-cost light source applications.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105681
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  • 5
    Electronic Resource
    Electronic Resource
    1.3 μm InGaAsP/InP multiquantum well buried heterostructure lasers grown by chemical-beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3084-3086 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High performance InGaAsP/InP multiquantum well (MQW) buried heterostructure lasers emitting around 1.3 μm were prepared for the first time by chemical-beam epitaxy. At 20 °C, continuous-wave (cw) threshold currents were 5–8 mA and quantum efficiencies were 0.35–0.45 mW/mA for 250 μm long lasers having one facet ∼85% reflective coated. At 80 °C, the cw threshold currents remained low, 23 mA, quantum efficiency stayed high, 0.22 mW/mA, and output power of ∼10 mW was achieved. cw power output as high as 125 mW was achieved with 750 μm long lasers having AR–HR (∼5%–85%) coatings. Lasers with bulk active were also studied for comparison. Though they also have excellent device performance, in general, they are somewhat inferior to MQW lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105796
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  • 6
    Electronic Resource
    Electronic Resource
    Te doping study in molecular beam epitaxial growth of GaSb using Sb2Te3 (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 56 (1990), S. 1688-1690 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Te evaporated from a Sb2Te3 compound source has been used to dope GaSb grown by molecular beam epitaxy. Te concentrations up to 2×1019 cm−3 followed a simple Arrhenius behavior with respect to source temperature. Efficient incorporation of Te remained insensitive to growth temperature until above 540 °C. Carrier density was found very close to Te doping level up to about 2×1018 cm−3. Above that, electron mobility as well as crystallinity deteriorated with increasing Te concentration. A dependence of surface reconstruction on Te doping level was observed. A complete change from (1×3) to (2×1) pattern occurred when Te concentration considerably exceeded its solubility limit in GaSb.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103118
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  • 7
    Electronic Resource
    Electronic Resource
    Semiconductor distributed feedback lasers with quantum well or superlattice gratings for index or gain-coupled optical feedback (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2580-2582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We introduce a semiconductor distributed feedback (DFB) in which the grating is fabricated out of quantum well (QW) or superlattice multilayers. This approach provides a very simple and effective scheme for achieving gain (loss)-coupled DFB lasers. The present idea was successfully demonstrated with a 1.55-μm wavelength 6-QW In0.6Ga0.4As (5 nm)/InGaAsP (band-gap wavelength=1.25 μm, 18.6 nm) separate confinement heterostructure DFB laser utilizing only a 2-QW In0.62Ga0.38As (4 nm)/InP (9.3 nm) as the grating.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106915
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  • 8
    Electronic Resource
    Electronic Resource
    All-gaseous doping during chemical-beam epitaxial growth of InGaAs/InGaAsP multi-quantum-well lasers (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1008-1010 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The use of all-gaseous doping during chemical-beam epitaxy (CBE) offers several important advantages. Injection of dopants, together with the metalorganic group-III beam, automatically leads to uniform dopant distribution across the entire wafer. Vapor dopant sources also ensure long-term stability and reproducibility. It also allows for instant doping profile control. Most important of all, an all-gaseous doping CBE system is particularly attractive for system manufacture and device production applications. We investigated n- and p-type dopings in InP and InGaAs during CBE using tetraethyltin (TESn) and diethylzinc (DEZn), respectively, and confirmed their suitability for use in growing high-quality long-wavelength InGaAs(P)/InGaAsP semiconductor injection lasers. Buried heterostructure lasers fabricated from CBE-grown 1.5-μm six quantum-well base wafers and metalorganic vapor-phase-epitaxy regrown iron-doped InP have excellent current-voltage characteristics and threshold currents as low as 8 mA. cw operation with threshold current as low as 23 mA at 80 °C and output power of ∼10 mW was achieved for diodes having one facet ∼85% reflective coated.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106327
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  • 9
    Electronic Resource
    Electronic Resource
    Doping in semiconductors with variable activation energy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 115-117 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A concept of doping that permits for the first time the freedom to design the desired activation energy of a dopant in a semiconductor is introduced and demonstrated. This doping engineering (DE) may also offer the possibility of achieving dopings in semiconductors in which a normally employed doping process is not successful, such as in wide band-gap II-VI semiconductors. Experimentally, we demonstrated that the normal activation energy, ∼19–25 meV of berrylium (Be) in GaAs was reduced to 4 meV in DE GaAs/δ-Al0.3Ga0.7As(Be) sample.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107365
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  • 10
    Electronic Resource
    Electronic Resource
    Optical measurement of ion implantation damage depth in multiple-quantum-well mesa structures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1013-1015 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have determined the depth of ion implant damage in semiconductor materials by nonlinear optical measurements. The carrier lifetime in ion-implanted mesas was measured by the pump-probe technique, and the carrier diffusion coefficient in unetched material was measured by degenerate four-wave mixing. An effective depth of damage within which the carriers experience fast recombination is then determined by modeling of the carrier dynamics in the mesa structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106329
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