Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
62 (1993), S. 2084-2086
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We have extended the capability and versatility of a chemical beam epitaxial (CBE) system by demonstrating reactive chemical beam etching (RCBE) of InP using phosphorus trichloride (PCl3) as the gaseous etching beam injected directly into the growth chamber. This permits instant switching from etching to growth (and vice versa) in the same run for the first time in CBE. We investigate RCBE of InP at various substrate temperatures between ∼400 and 580 °C, under different PCl3 fluences, and etching conditions. Excellent surface morphology was obtained at high temperatures ((approximately-greater-than)530–570 °C) and under an etching rate of (approximately-less-than)6 A(ring)/s. We also found that upon addition of trimethylindium flow equivalent to a growth rate of 1 A(ring)/s during RCBE a dramatic improvement in surface morphology was obtained even at a high net etching rate of 10 A(ring)/s. The surface morphology obtained under such conditions is indistinguishable from that of the original substrate surface.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.109486
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