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  • 1
    Electronic Resource
    Electronic Resource
    Quantization effect on capacitance-voltage and current-voltage characteristics of an InAs/AlSb/GaSb interband tunneling diode (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 4286-4289 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Capacitance-voltage measurements were performed on the InAs/AlSb/GaSb interband tunneling diode at various frequencies. Theoretical analyses using a self-consistent Schrödinger–Poisson solver were found in agreement with the experimental results under the forward-bias condition. The quantization energy of each subband of the electron in the InAs accumulation region is used to predict the tunneling current cutoff voltage in agreement with that of the current-voltage measurements. Therefore, the cutoff of the interband tunneling process is mainly caused by the crossover of the electron subband energy in the InAs conduction band with respect to the valence band of the GaSb electrode due to the increased external bias voltage.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346222
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  • 2
    Electronic Resource
    Electronic Resource
    On the effect of the barrier widths in the InAs/AlSb/GaSb single-barrier interband tunneling structures (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3451-3455 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The dependence of the interband tunneling current on AlSb barrier widths is studied in the InAs/AlSb/GaSb single-barrier diode structures. The experimental results show that the peak current density displays an exponential dependence on the barrier width. The Wentzel-Kramers-Brillouin approximation combined with the k⋅p two-band model were used in analyzing the energy level in the AlSb barrier through which the peak tunneling currents occur. The energy level thus obtained (0.48±0.10 eV above the valence band edge of the AlSb) agrees with the valence-band offset (0.40±0.15 eV) between the AlSb and the GaSb obtained by x-ray photoemission measurement reported by Gualtieri et al. [Appl. Phys. Lett. 49, 1037 (1986)]. By adjusting the barrier width properly, we obtained a high peak current density of 24 kA/cm2 (with a peak-to-valley ratio of 1.4) and a high peak-to-valley ratio of 4.5 (with a peak current density of 3.5 kA/cm2) at room temperature. In addition, the peak-current voltages for different AlSb barrier widths were calculated and compared with the measured results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346355
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  • 3
    Electronic Resource
    Electronic Resource
    Temperature dependence of photoluminescence from Mg-doped In0.5Ga0.5P grown by liquid-phase epitaxy (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 2309-2312 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The temperature dependence of photoluminescence from the Mg-doped In0.5Ga0.5P layers on (100) GaAs substrates grown by liquid-phase epitaxy has been studied. At low temperature, the spectra show only two major emission peaks involving intrinsic recombination and conduction–band-to-acceptor transition. The intrinsic recombination dominates in the doping concentration range studied (1.0×1017–7.0×1018 cm−3) above 60 K. Below 50 K, these two peaks merged with each other when the doping concentration is higher than 1×1018 cm−3. The temperature dependence of band gap in In0.5Ga0.5P layers determined from the photoluminescence peak energy varies as 1.976 − [7.5 ×10−4 T2/(T + 500)] eV. For the moderately doped concentration (p 〈 1.4 × 1018 cm−3), the Mg acceptor ionization energy obtained from 50-K photoluminescent spectra is in the range from 37 to 40 meV.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349425
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  • 4
    Electronic Resource
    Electronic Resource
    InAs/AlSb/GaSb single-barrier interband tunneling diodes with high peak-to-valley ratios at room temperature (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 68 (1990), S. 3040-3043 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have fabricated an InAs/AlSb/GaSb single-barrier interband tunneling diode by molecular beam epitaxy. In this structure, a large tunneling current can be obtained by taking the advantage of the large heterojunction-conduction band to valence band overlap (0.15 eV) between InAs and GaSb which offers flexible designs of the AlSb barrier thickness and the doping concentrations. We have obtained a negative differential resistance with a peak-to-valley current ratio as high as 4.7 and a peak current density of 3.5 kA/cm2 at room temperature with a 1.5-nm-thick AlSb barrier. The current transport mechanism in this tunneling structure will be discussed according to the I-V characteristics as a function of temperature.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.346396
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  • 5
    Electronic Resource
    Electronic Resource
    Periodic index separate confinement heterostructure InGaAs/AlGaAs multiple quantum well laser grown by organometallic vapor phase epitaxy (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 598-600 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Organometallic vapor phase epitaxy was used to grow a novel periodic index separate confinement heterostructure (PINSCH) InGaAs/AlGaAs multiple quantum well (MQW) laser. Secondary ion mass spectrometry and transmission electron microscopy were used to characterize the structure. The performance of the PINSCH laser was compared with that of a graded index separate confinement heterostructure (GRINSCH) MQW laser grown under similar conditions. The PINSCH laser uses cladding layers comprised of periodic semiconductor multilayers (Al0.4Ga0.6As/GaAs) which provide both optical and electrical confinement. Since the optical field decays over several multilayers, and therefore is far less tightly confined than in the GRINSCH structure, a significant reduction of the transverse far-field angle occurs. Comparing the performance of 5×750 μm self-aligned ridge waveguide InGaAs/AlGaAs lasers emitting at 980 nm, the PINSCH structure exhibits a transverse far-field angle of 23° compared to 46° for the GRINSCH. This is obtained at the expense of a modest increase in threshold current (19 mA vs 10 mA).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106565
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  • 6
    Electronic Resource
    Electronic Resource
    A periodic index separate confinement heterostructure quantum well laser (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1046-1048 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A novel edge-emitting periodic index separate confinement heterostructure (PINSCH) semiconductor quantum well laser is proposed and demonstrated for the first time. Periodic semiconductor multilayers are used as optical confinement layers to simultaneously reduce the transverse beam divergence and increase the maximum output power. Self-aligned ridge-waveguide InGaAs/GaAs/AlGaAs PINSCH quantum well lasers emitting at 980 nm are fabricated. The 5×750 μm device has far-field angles of 10° by 20°, a threshold current of 45 mA, an external differential quantum efficiency of 1.15 mW/mA (90%), and an output power exceeding 620 mW, all measured at room temperature under CW operation. A record high fiber coupling efficiency of 51% has been achieved with a lensed fiber of 5 μm core diameter.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106340
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  • 7
    Electronic Resource
    Electronic Resource
    1.3 μm InGaAsP/InP multiquantum well buried heterostructure lasers grown by chemical-beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 3084-3086 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High performance InGaAsP/InP multiquantum well (MQW) buried heterostructure lasers emitting around 1.3 μm were prepared for the first time by chemical-beam epitaxy. At 20 °C, continuous-wave (cw) threshold currents were 5–8 mA and quantum efficiencies were 0.35–0.45 mW/mA for 250 μm long lasers having one facet ∼85% reflective coated. At 80 °C, the cw threshold currents remained low, 23 mA, quantum efficiency stayed high, 0.22 mW/mA, and output power of ∼10 mW was achieved. cw power output as high as 125 mW was achieved with 750 μm long lasers having AR–HR (∼5%–85%) coatings. Lasers with bulk active were also studied for comparison. Though they also have excellent device performance, in general, they are somewhat inferior to MQW lasers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105796
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  • 8
    Electronic Resource
    Electronic Resource
    Self-aligned InGaAs/GaAs/InGaP quantum well lasers prepared by gas-source molecular beam epitaxy with two growth steps (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2929-2931 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Index-guided self-aligned InGaAs/GaAs/InGaP quantum well lasers are fabricated by gas-source molecular beam epitaxy in two growth sequences on a GaAs substrate for the first time. The use of aluminum-free InGaP as cladding layers permits regrowth steps without the problem with the oxidation of aluminum alloys. A patterned n-InGaP current confinement layer is used to provide index guiding as well as current blocking. Preliminary results from coated 2.5-μm-wide and 508-μm-long devices show a room temperature continuous wave lasing threshold current of 12 mA with an external differential quantum efficiency of 0.68 mW/mA and a characteristic temperature of 130 K from 30 to 75 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105854
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  • 9
    Electronic Resource
    Electronic Resource
    Semiconductor distributed feedback lasers with quantum well or superlattice gratings for index or gain-coupled optical feedback (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 2580-2582 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We introduce a semiconductor distributed feedback (DFB) in which the grating is fabricated out of quantum well (QW) or superlattice multilayers. This approach provides a very simple and effective scheme for achieving gain (loss)-coupled DFB lasers. The present idea was successfully demonstrated with a 1.55-μm wavelength 6-QW In0.6Ga0.4As (5 nm)/InGaAsP (band-gap wavelength=1.25 μm, 18.6 nm) separate confinement heterostructure DFB laser utilizing only a 2-QW In0.62Ga0.38As (4 nm)/InP (9.3 nm) as the grating.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106915
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  • 10
    Electronic Resource
    Electronic Resource
    1.5 μm wavelength InGaAs/InGaAsP distributed feedback multi-quantum-well lasers grown by chemical beam epitaxy (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 2375-2377 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrated the first successful growth of 1.5 μm strained-layer InGaAs/InGaAsP multi-quantum-well (MQW) distributed feedback (DFB) lasers by chemical beam epitaxy (CBE). In these DFB wafers, a quaternary grating is placed at the bottom of the MQW stack with an InP spacer layer. Studies by transmission electron microscopy show that defect-free InP regrowth was achieved with no mass transport needed over the grating corrugations before regrowth. With CBE regrowth the shapes of the gratings were well preserved. The InP overlayer also very effectively smoothed out the quaternary surface corrugations resulting in very flat MQW structures. Buried-heterostructure 6-QW DFB lasers (250 μm long and as-cleaved) operated at 1.55 μm with cw threshold currents 10–15 mA and slope efficiencies up to 0.35 mW/mA (both facets). Side-mode suppression ratios (SMSR) as high as 49 dB was obtained. The laser operated in the same DFB mode with SMSR staying above 40 dB from threshold and throughout the entire current range even at high temperatures (70 °C checked).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106020
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