Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
70 (1991), S. 2309-2312
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The temperature dependence of photoluminescence from the Mg-doped In0.5Ga0.5P layers on (100) GaAs substrates grown by liquid-phase epitaxy has been studied. At low temperature, the spectra show only two major emission peaks involving intrinsic recombination and conduction–band-to-acceptor transition. The intrinsic recombination dominates in the doping concentration range studied (1.0×1017–7.0×1018 cm−3) above 60 K. Below 50 K, these two peaks merged with each other when the doping concentration is higher than 1×1018 cm−3. The temperature dependence of band gap in In0.5Ga0.5P layers determined from the photoluminescence peak energy varies as 1.976 − [7.5 ×10−4 T2/(T + 500)] eV. For the moderately doped concentration (p 〈 1.4 × 1018 cm−3), the Mg acceptor ionization energy obtained from 50-K photoluminescent spectra is in the range from 37 to 40 meV.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.349425
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