Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 1123-1125
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
The doping characteristics of Mg–Zn codoped GaN films grown by metalorganic chemical vapor deposition are investigated. By means of the concept of Mg–Zn codoping technique, we have grown p-GaN showing a low electrical resistivity (0.72 Ω cm) and a high hole concentration (8.5×1017 cm−3) without structural degradation of the film. It is thought that the codoping of Zn atoms with Mg raises the Mg activation ratio by reducing the hydrogen solubility in p-GaN. In addition, the measured specific contact resistance of Mg–Zn codoped GaN film is 5.0×10−4 Ω cm2, which is one order of magnitude lower than that of Mg doped only GaN film (1.9×10−3 Ω cm2). © 2000 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.1289494
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