ISSN:
1013-9826
Source:
Scientific.Net: Materials Science & Technology / Trans Tech Publications Archiv 1984-2008
Topics:
Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
Notes:
SiC-based boundary layer capacitors were prepared by hot pressing. XRD, TEM and thehigh-resolution TEM techniques were used to characterize the sintered samples. It was found that thewidth of the grain boundary within the SiC-based boundary capacitors was about 200 nm. Extremely highdielectric constant of 〉2,400,000 appeared in a wide temperature range from 590oC to 730oC, with themaximum of 〉2,900,000. The critical temperature was about 500oC. Space charge polarization wasdetected as the temperature increased. Nano grains in the boundary phase were observed, which mightenhance the space charge behavior
Type of Medium:
Electronic Resource
URL:
http://www.tib-hannover.de/fulltexts/2011/0528/01/56/transtech_doi~10.4028%252Fwww.scientific.net%252FKEM.368-372.235.pdf
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