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  • 1
    Electronic Resource
    Electronic Resource
    Interaction of Ni90Ti10 alloy thin film with 6H-SiC single crystal (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 167-173 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions, phase formation, microstructure, and composition, as functions of heat treatments (400–800 °C) were investigated in Ni90Ti10 alloy thin film coevaporated on an n-type 6H-SiC (0001) single-crystal substrate. The study was carried out with the aid of Auger electron spectroscopy, x-ray diffraction, and analytical transmission electron microscopy. The interaction was found to begin at 450 °C. Ni and C are the dominant diffusing species. The reaction zone is divided into three layers. In the first layer, adjacent to the SiC substrate, the presence of Ni-rich silicide, Ni2Si, and C precipitates, was observed. The second layer is composed mainly of TiC, while the third consists of Ni2Si. This composite structure, consisting of the silicide as a low resistivity ohmic contact, and of the carbide as a diffusion barrier, promises high-temperature stability crucial to ohmic contact development for SiC technology. Factors controlling phase formation in the Ni–Ti/SiC system are discussed. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362801
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  • 2
    Electronic Resource
    Electronic Resource
    Interaction between Ni90Ti10 alloy thin film and Si single crystal (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 1179-1181 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Interfacial reactions in annealed Ni90Ti10 alloy thin films deposited on Si(100) were studied. The investigation was carried out by Auger electron spectroscopy, x-ray diffraction, and transmission electron microscopy combined with energy dispersive x-ray spectroscopy. Well defined phase separation was observed in the reaction zone. The first layer, adjacent to the Si substrate, contains Ni silicide, the second layer is most probably composed of the ternary Ni-Ti-Si compound. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362669
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of nanocrystallites in porous p-type 6H-SiC (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4045-4049 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the formation of porous p-type 6H-SiC. The existence of uniformly dispersed pores was confirmed by transmission electron microscopy, with interpore spacings in the range of 1–10 nm. The porous film as a whole is a single crystal. Luminescence peaks above the normal band gap of 6H-SiC have been observed in the porous layer, but were not distinguished in the bulk SiC substrate. Quantum confinement is discussed as a possible mechanism for the luminescence effects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.357352
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  • 4
    Electronic Resource
    Electronic Resource
    Crystallization and growth of Ni-Si alloy thin films on inert and on silicon substrates (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 3791-3798 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The crystallization kinetics and thermal stability of NiSi2±0.2 alloy thin films coevaporated on two different substrates were studied. The substrates were: silicon single crystal [Si(100)] and thermally oxidized silicon single crystal. In situ resistance measurements, transmission electron microscopy, x-ray diffraction, Auger electron spectroscopy, and Rutherford backscattering spectroscopy were used. The postdeposition microstructure consisted of a mixture of amorphous and crystalline phases. The amorphous phase, independent of the composition, crystallizes homogeneously to NiSi2 at temperatures lower than 200 °C. The activation energy, determined in the range of 1.4–2.54 eV, depends on the type of the substrate and on the composition of the alloyed films. The activation energy for the alloys deposited on the inert substrate was found to be lower than for the alloys deposited on silicon single crystal. The lowest activation energy was obtained for nonstoichiometric NiSi2.2, the highest for NiSi2—on both substrates. The crystallization mode depends on the structure of the as-deposited films, especially the density of the existing crystalline nuclei. Substantial differences were observed in the thermal stability of the NiSi2 compound on both substrates. With the alloy films deposited on the Si substrate, only the NiSi2 phase was identified after annealing to temperatures up to 800 °C. In the films deposited on the inert substrate, NiSi and NiSi2 phases were identified when the Ni content in the alloy exceeded 33 at. %. The effects of composition and the type of substrate on the crystallization kinetics and thermal stability are discussed. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358554
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  • 5
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing of Al(0.8% Si)/Ti10W90/a-Si contacts (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3025-3031 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of rapid thermal annealing on the composition, structure, and I-V characteristics of Al(0.8% Si)/Ti:W/a-Si contacts was studied. It was established that heat treatments in temperatures ranging between 300 and 500 °C for a time span of 10 s led to grain boundary diffusion of Si and Al through the Ti10W90 layer. Subsequently, Si diffused into the Al film while Al penetrated into the amorphous Si. No silicides or intermetallic compounds were observed to form as a result of the rapid heat treatments. The electrical measurements showed that the I-V curve in the forward bias is identical to that of the reversed bias. The electrical resistance of the contacts increased as a result of a rise in the heat treatment temperature. A model of electrical conductivity in amorphous semiconductors was applied to explain the electrical behavior of the contacts.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345425
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  • 6
    Electronic Resource
    Electronic Resource
    The effect of heat treatments on the structure and composition of Al(0.8% Si)/TiW/polycrystalline Si system (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 4341-4343 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The effect of heat treatments on the structure and composition of a system consisting of a conductive outer layer made of Al(0.8% Si) thin film, TiW(30:70 at. %) thin film as a diffusion barrier, and a polycrystalline Si substrate was studied. It was established that heat treatments at temperatures ranging between 400 and 500 °C led to the diffusion of Si and Al through the TiW layer, following which Al diffused into the polycrystalline Si, while Si diffused into the Al film. The silicides of TiSi, TiSi2, and intermetallic compounds of Al3Ti and WAl12 were formed at the Al/TiW interface as a result of the 30-min heat treatment at temperatures ranging between 450 and 500 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.348409
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  • 7
    Electronic Resource
    Electronic Resource
    Morphology and kinetics of crystallization of amorphous V75Si25 thin-alloy films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 60 (1986), S. 2445-2452 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical and microstructural changes of coevaporated V75Si25 alloy thin films have been studied as a function of temperature from room temperature to 830 °C. In situ resistivity measurements, hot-stage transmission electron microscopy, Rutherford backscattering spectroscopy and the Seeman–Bohlin glancing angle incidence x-ray diffraction technique were applied. Upon heat treatment at a heating rate of 8 °C/min, a sharp decrease in resistivity occurs at ∼670 °C which results from an amorphous to crystalline phase transformation. The crystallized phase was identified as V3Si. The mechanism of transformation is random nucleation at a rapidly decreasing rate and a fast quasi-isotropic growth. The kinetics of crystallization have been studied by utilizing electrical resistivity measurements during isothermal heat treatment. Six different temperatures between 570 °C and 630 °C were adopted. The apparent activation energy (∼3.6 eV) obtained from isothermal measurements was found to be in agreement with that obtained from nonisothermal treatments at varying rates of heating. The distinct change of the Avrami mode parameter from 4 to 2 at a constant value of t/τ during the process of crystallization is not immediately understood.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.337157
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  • 8
    Electronic Resource
    Electronic Resource
    Effect of temperature on electrical and microstructural changes of coevaporated Ir-Si alloy films (1986)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 59 (1986), S. 415-423 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Electrical and microstructural changes of coevaporated Ir50Si50 have been studied as a function of temperature from room temperature to 970 °C. In situ resistivity measurements, in situ annealing and transmission electron microscopy, Rutherford backscattering spectroscopy and Seeman–Bohlin glancing angle incidence x-ray diffraction were applied. In the as-deposited state the alloy film is amorphous and exhibits semiconducting behavior. A two-stage phase transformation occurs in the process of heating. The first transition from amorphous to crystalline IrSi is nucleation controlled. It is accompanied by an abrupt decrease in resistivity and was found to be dependent on the heating rate and chemical composition. The second crystalline-to-crystalline transformation is controlled by nonstoichiometry of the alloy film. An excess of Ir atoms leads to formation of Ir2Si at ∼640 °C while an excess of Si atoms leads to formation of IrSi3 at ∼710 °C. The second transition is independent of the heating rate. The formation of both Ir2Si and IrSi3 decreases the electrical resistivity. The isothermal transformation from amorphous to crystalline structure follows a sigmoidal function. The apparent activation energy of this process is about 1.32 eV. The kinetic behavior implies random nucleation and interface-controlled two-dimensional growth of the crystalline phase.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336646
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  • 9
    Electronic Resource
    Electronic Resource
    Thermal stability and electrical conduction behavior of coevaporated WSi2±x thin films (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 354-364 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The thermal stability of coevaporated amorphous WSi2±x(x(approximately-equal-to)±0.2) thin films from room temperature to 1000 °C has been studied by in situ resistivity measurements and hot-stage transmission-electron microscopy. During continuous heating two consecutive phase transformations were observed to occur via nucleation and growth processes. The first which occurs at ∼420 °C is the crystallization of the amorphous film to a metastable, semiconducting hexagonal phase WSi2. The second which occurs at ∼620 °C is the transformation of the hexagonal phase to the thermodynamically stable, metallic, tetragonal phase of WSi2. The hexagonal phase is characterized by an acicular morphology and its formation is associated with a drastic increase in resistivity. The crystallites (grains) of the stable tetragonal phase are equiaxed and their formation is associated with a rapid decrease in resistivity. In order to achieve a low value of resistivity, ∼70 μΩ cm at room temperature, the tetragonal phase must be annealed to the neighborhood of 1000 °C. The activation energy for the hexagonal to tetragonal transformation (∼3 eV) was found to be higher than that for the crystallization (∼2 eV). The mode parameters for both transformations were found to be almost the same, n∼2. The characteristics of both transformations were not greatly influenced by the compositional changes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341435
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  • 10
    Electronic Resource
    Electronic Resource
    High-resolution x-ray diffraction measurements of residual stresses in polycrystalline thin films deposited on single crystalline substrates (1996)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 69 (1996), S. 4242-4244 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A nondestructive method for stress determination in polycrystalline/amorphous thin films deposited on the nearly perfect crystals was developed. High-resolution x-ray diffraction rocking curves are taken from the substrate using a monochromatized and quasiparallel incident x-ray beam. Changes in the rocking curve shape, caused by stress-induced bending of the substrate, are compared with the newly derived analytical expression of the diffraction spectrum, and as a result the radius of curvature and hence the biaxial stress is obtained. For the (004) Si reflection and the Cu Kα1 radiation the radii of curvature within the interval, 3 m〈R〈500 m, can be resolved. The method was successfully applied to measure stresses in heat-treated Ni90Ti10 alloy films deposited on a Si (001) substrate. The stress behavior (as a function of the annealing temperature) was found to reflect the sequence of the formation of silicides and enabled the evaluation of their thermal expansion coefficients. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.116958
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