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  • 1
    Electronic Resource
    Electronic Resource
    Accurate base and collector current modeling of polysilicon emitter bipolar transistors: Quantification of hole surface recombination velocity (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 79 (1996), S. 2738-2744 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present predictive and accurate modeling of base and collector currents in poly-Si emitter bipolar transistors Ref. . Using a standard 0.8 μm bipolar complementary metal–oxide–semiconductor technology process flow Ref. , numerous experiments are performed. The base and emitter doping profiles are varied intentionally over a wide range in a controlled manner, so as to extract a self-consistent set of apparent band-gap narrowing, minority-carrier mobility, intrinsic concentration parameter, and Auger recombination rate that is valid for simultaneously modeling bipolar transistor base and collector currents. The standard nature of the fabrication process technology chosen for this study allows the results to be more generally applicable. The doping concentrations for physical device simulations are taken directly from secondary-ion-mass spectrometry measurements. These profiles are then verified using spreading resistance measurements and capacitance–voltage measurements. It is shown that the measured base and collector currents for all experiments at room temperature can be fit simultaneously using Klaasen's unified apparent band-gap narrowing and mobility model Ref. . The emitter poly-Si/epi-Si interface (surface) hole recombination velocity is derived as a function of the emitter implant dose (arsenic concentration in the emitter) consistent with the model mentioned above. Sensitivity of the simulation results to model parameters is shown. It is further shown that the emitter implant dose can be used as a bipolar transistor optimization parameter. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.361147
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  • 2
    Electronic Resource
    Electronic Resource
    Controlled doping of GaAs films grown with tertiarybutylarsine (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 6507-6512 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To assess the suitability of alternative arsenic compounds for device applications, development of growth procedures for controlled n and p doping are required. In this paper we report the first studies of the doping characteristics of sulfur, silicon, and carbon species in GaAs films grown with tertiarybutylarsine, t-BuAsH2. Hydrogen sulfide, H2S, and hexamethyldisilane, (CH3)6Si2, were used as dopant sources. The effects of growth temperature, dopant source concentration, V/III ratio and substrate crystallographic orientation on dopant incorporation were investigated. We demonstrate the capability of controllably doping GaAs films grown with t-BuAsH2, and report the first fabrication of active devices (n+-n metal-semiconductor field effect transistors) from t-BuAsH2-grown material. These devices exhibited dc and microwave performance comparable to that achieved with arsine-grown devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345126
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  • 3
    Electronic Resource
    Electronic Resource
    Rapid thermal annealing of dopants implanted into preamorphized silicon (1985)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 58 (1985), S. 683-687 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The rapid thermal annealing behavior of BF+2 and As+ +BF+2 implanted into crystalline and preamorphized silicon is studied. After solid phase epitaxy nearly complete electrical activity is obtained without channeling tails (for the preamorphized silicon) or significant thermal diffusion. Dislocation loops always appear near the amorphous-crystalline (α/c) interface of the preamorphized layer after solid phase epitaxy annealing (called "deep disorder''). For preamorphization using Si+ damage into room-temperature silicon targets, dislocations also span between the deep disorder and the surface, called "spanning dislocations.'' The spanning dislocations are eliminated by preamorphization using Ge+ implanted into room-temperature silicon targets. Transmission electron microscopy studies show the spanning dislocations move to the surface under thermal treatment, while the deep disorder remains to act as a getter region. The deep disorder is shown to getter F, or Au when Au is intentionally diffused from the wafer backside. The same kind of disorder correlates the limited diffusion behavior of B for BF+2 implants into crystalline Si. Otherwise, for the cases studied, the secondary ion mass spectrometry and Rutherford backscattering spectrometry profiles show nearly normal diffusive behavior for B or As dopants for 10-sec rapid thermal anneal. General physical interpretations are noted.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.336182
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  • 4
    Electronic Resource
    Electronic Resource
    The influence of ammonia on rapid-thermal low-pressure metalorganic chemical vapor deposited TiNx films from tetrakis (dimethylamido) titanium precursor onto InP (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 993-1000 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The process kinetics, chemical composition, morphology, microstructures, and stress of rapid-thermal low pressure metalorganic chemical vapor deposited (RT-LPMOCVD) TiNx films on InP, using a combined reactive chemistry of ammonia (NH3) gas and tetrakis (dimethylamido) titanium (DMATi) liquid precursors, were studied. Enhanced deposition rates of 1–3 nm s−1 at total chamber pressures in the range of 3–10 Torr and temperatures of 300 °C–350 °C at a NH3:DMATi flow rate ratio of 1:8 to 1:15 were achieved. Stoichiometric film compositions were obtained, with carbon and oxygen impurity concentrations as low as 5%. Transmission electron microscopy analysis identified the deposited films as TiN with some epitaxial relationship to the underlying (001) InP substrate. This process provides a superior film to the preview RT-LPMOCVD TiNx film deposited using only the DMATi precursor.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.351271
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  • 5
    Electronic Resource
    Electronic Resource
    Characterization of sulfuric acid proton-exchanged lithium niobate (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 627-633 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A series of bulk proton-exchanged lithium niobate waveguides has been prepared by using concentrated sulfuric acid as the proton source and varying the time and temperature of the exchange process. The optical and physical properties of the proton-exchanged lithium niobate layer have been measured and found to be essentially identical to proton-exchanged layers obtained by other workers using the benzoic acid process. Sulfuric acid offers a number of advantages over benzoic acid as a proton source, including a wider temperature liquid range and a greater ease of handling in a clean-room environment.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.345764
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  • 6
    Electronic Resource
    Electronic Resource
    Diffusion parameters of indium for silicon process modeling (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 4944-4947 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The diffusion parameters of indium in silicon are investigated. Systematic diffusion experiments in dry oxidizing ambients at temperatures ranging from 800 to 1050 °C are conducted using silicon wafers implanted with indium. Secondary-ion-mass spectrometry (SIMS) is used to analyze the dopant distribution before and after heat treatment. The oxidation-enhanced diffusion parameter [R. B. Fair, in Semiconductor Materials and Process Technology Handbook, edited by G. E. McGuire (Noyes, Park Ridge, NJ, 1988); A. M. R. Lin, D. A. Antoniadis, and R. W. Dutton, J. Electrochem. Soc. Solid-State Sci. Technol. 128, 1131 (1981); D. A. Antoniadis and I. Moskowitz, J. Appl. Phys. 53, 9214 (1982)] and the segregation coefficient at the Si/SiO2 interface [R. B. Fair and J. C. C. Tsai, J. Electrochem. Soc. Solid-State Sci. Technol. 125, 2050 (1978)] (ratio of indium concentration in silicon to that in silicon dioxide) are extracted as a function of temperature using SIMS depth profiles and the silicon process simulator PROPHET [M. Pinto, D. M. Boulin, C. S. Rafferty, R. K. Smith, W. M. Coughran, I. C. Kizilyalli, and M. J. Thoma, in IEDM Technical Digest, 1992, p. 923]. It is observed that the segregation coefficient of indium at the Si/SiO2 interface is mIn(very-much-less-than)1, similar to boron; however, unlike boron, the segregation coefficient of indium at the Si/SiO2 interface decreases with increasing temperature. Extraction results are summarized in analytical forms suitable for incorporation into other silicon process simulators. Finally, the validity of the extracted parameters is verified by comparing the simulated and measured SIMS profiles for an indium implanted buried-channel p-channel metal–oxide–semiconductor field-effect-transistor [I. C. Kizilyalli, F. A. Stevie, and J. D. Bude, IEEE Electron Device Lett. (1996)] process that involves a gate oxidation and various other thermal processes. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.363537
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  • 7
    Electronic Resource
    Electronic Resource
    Silicon-fluorine bonding and fluorine profiling in SiO2 films grown by NF3-enhanced oxidation (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 780-782 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The incorporation and chemical bonding of fluorine introduced in SiO2 thin films by NF3-enhanced oxidation of silicon has been studied by means of x-ray photoelectron spectroscopy and secondary ion mass spectrometry depth profiling. Fluorine bonding in the oxide network is observed, indicated to occur in the area of the oxidizing interface and resulting in depth profiles which reflect the manner of the exposure of the growing oxide to the NF3 fluorine source during oxidation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.107796
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  • 8
    Electronic Resource
    Electronic Resource
    Observation of strong contrast from doping variations in transmission electron microscopy of InP-based semiconductor laser diodes (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 341-343 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report strong transmission electron microscope (TEM) contrast between p-, i-, and n-doped InP layers in semiconductor laser diodes. For doping concentrations ∼1018 cm−3, contrast levels on the order 30% are observed between p- and n-type layers. A critical feature of these experiments is that the samples imaged in the TEM are relatively perfect, plane-parallel sided membranes fabricated with a focused ion beam. This technique offers the ability to detect and map doping variations with nm-scale resolution, simultaneously with the other compositional and defect information inherent to TEM. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114206
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  • 9
    Electronic Resource
    Electronic Resource
    Microscopic studies of semiconductor lasers utilizing a combination of transmission electron microscopy, electroluminescence imaging, and focused ion beam sputtering (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 3408-3410 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The microstructure of semiconductor laser diodes is studied using a combination of focused ion beam sputtering, electroluminescence imaging, and cross-sectional transmission electron microscopy. Careful control of focused ion beam sputtering allows fabrication of high quality thin membranes for transmission electron microscope imaging, which can be located to submicron accuracy at a given position on the laser active stripe. By correlation with electroluminescence imaging, the membrane may then be positioned at an optically degraded region of the active stripe. In addition, imaging of the complete cross-sectional laser structure, from substrate to surface contact layers is possible. The applications of these techniques to studies of laser degradation mechanisms are demonstrated and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.109032
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  • 10
    Electronic Resource
    Electronic Resource
    Hydrogen passivation of Si δ-doped GaAs grown by molecular beam epitaxy (1990)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 57 (1990), S. 2928-2930 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Hydrogen passivation of Si δ-doped GaAs grown by molecular beam epitaxy is studied. Just as in uniformily Si-doped GaAs, exposure of the δ-doped material to a low frequency (30 kHz) hydrogen plasma at 250 °C for 30 min deactivates the Si donors in the δ spikes. For samples with Si doping of (1–6)×1018 cm−3, carrier concentration in the spikes decreased by nearly three orders of magnitude following hydrogenation. Secondary-ion mass spectrometric analysis of deuterated samples confirmed trapping of deuterium in the Si-doped spikes. Consistent with the deactivation of Si donors following hydrogenation, changes were observed in the near-band edge luminescence spectrum at 4.2 K, which showed in the hydrogenated sample the absence of Burstein–Moss shift that was observed in the as-grown sample. This hydrogen-induced passivation of Si donors in the δ spikes can be of benefit in selectively deactivating donor atoms in device applications, and also provide a method for tailoring the hydrogen distribution in an epitaxial structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.103733
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