ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Low-temperature selective epitaxial growth of silicon at atmospheric pressure (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2689-2691 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial Si has been grown selectively on oxide-patterned substrates from 850 down to 600 °C for the first time in the Si-Cl-H system at atmospheric pressure. Si deposition was achieved by hydrogen reduction of dichlorosilane in an ultraclean system using a load lock. Epitaxy was achieved at low temperatures only when the hydrogen was purified to remove traces of H2O and O2 implying that an oxygen-free environment is the most important factor controlling epitaxy at low temperatures. Cross-sectional transmission electron micrographs reveal perfect crystallinity in the epitaxial layer and a totally clean and featureless interface between epitaxy and substrate.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101036
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Study of end of range loop interactions with B+ implant damage using a boron doped diffusion layer (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 2298-2302 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A boron doped epilayer was used to investigate the interaction between end of range dislocation loops (formed from Ge+ implantation) and excess point defects generated from a low dose 1014/cm2 B+ implant into silicon. The boron doping spike was grown in by chemical vapor deposition at a depth of 8000 A(ring) below the surface. The intrinsic diffusivity of the boron in the doped epilayer was determined by simply annealing the as-grown layer. The end of range (type II) dislocation loops were created using two overlapping room-temperature Ge+ implants of 75 and 190 keV each at a dose of 1×1015/cm2. Upon annealing the amorphous layer regrew and a layer of type II dislocation loops formed ∼2300 A(ring) deep at a density of ∼8×1010/cm2. The enhancement in the buried boron layer diffusivity due to the type II loop forming Ge+ implant was observed to increase approximately between 2.5 and 5 min from 1500× to a value 2500× above the intrinsic diffusivity before dropping back to intrinsic levels after 30 min at 800 °C. A low-energy (8 keV) 1×1014/cm2 B+ (Rp=320 A(ring)) implant into material without loops resulted in an average enhancement of 1540× in boron epilayer diffusivity after 2.5 min at 800 °C. The enhancement dropped down to intrinsic diffusivity levels after 5 min at 800 °C. When a layer of loops was introduced and annealed prior to and deeper than a subsequent low-energy B+ implant, annealing of the B+ implant produced no measurable enhancement in the buried B layer diffusivity. Taken together this imples that the interaction kinetics between the dislocation loop layer and the damage induced interstitials are primarily diffusion limited and the loops are absorbing a significant fraction of the interstitials produced by the low-energy B+ implant. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360147
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Transient boron diffusion in ion-implanted crystalline and amorphous silicon (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 63 (1988), S. 1452-1463 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Boron diffusion in ion-implanted and annealed single-crystal and amorphized Si is compared to determine the effect of amorphization on the initial transient boron motion reported for single crystal. The boron was implanted at 20 keV and at doses of 1×1015 and 3×1015cm−2. The Si was either preamorphized or postamorphized to a depth of 320 nm by implantation of Si ions at three different energies. In the amorphized samples the entire boron profile was always contained within this distance. The samples were annealed by furnace or rapid thermal annealing to 900–1100 °C with or without a preanneal at 600 °C. The initial rapid diffusion transient in the tail region of the boron profile was observed in all the crystal samples. This transient was totally absent in the amorphized samples. This is manifest by careful comparison of boron concentration profiles determined by secondary ion mass spectrometry of single-crystal and amorphized samples after annealing. For anneals where significant motion occurs, the profiles of the amorphized samples could be fit with a computational model that did not include anomalous transient effects. It is proposed that excess interstitials cause the transient diffusion in the case of the crystalline samples. The source of interstitials is believed to be provided by the thermal dissolution of small clusters that are formed by the implantation process. They exist for only a short time, during which they enhance the boron diffusion. Since there is no enhanced diffusion in the amorphous region that regrows to single crystal, apparently interstitial clusters are neither produced by nor do they survive the regrowth process in that region. In addition, the interstitials generated by the damage beyond the amorphous-crystalline boundary are prevented from entering the regrown region by the dislocation loops formed at that boundary which act as a sink consuming the interstitials diffusing toward the surface.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339926
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    Strain relaxation in silicon-germanium microstructures observed by resonant tunneling spectroscopy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 3921-3923 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured the resonant tunneling current–voltage I(V) characteristics of strained p-Si/Si1−xGex double-barrier microstructures ranging from 1.0 to 0.1 μm in lateral extent. The bias spacing between resonant current peaks in the I(V) reflects the energy separation of the Si1−xGex quantum well subbands, which is partially determined by the strain. As the lateral size of the structures decreases, we observe consistent shifts in the I(V) peak spacing corresponding to strain energy relaxation of ∼30% in smaller structures. An additional I(V) fine structure is observed in the 0.1 μm device, consistent with lateral quantization due to nonuniform strain. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.115318
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Cyclotron resonance studies of two-dimensional holes in strained Si1−xGex/Si quantum wells (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 1522-1524 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Far-infrared magnetotransmission spectroscopy has been employed to study p-type modulation-doped strained Si1−xGex/Si quantum wells grown by atmospheric pressure chemical vapor deposition at magnetic fields up to 23 T. The cyclotron resonance (CR) mass of the two-dimensional hole gas (2DHG) in a strained 7.5 nm Si0.63Ge0.37 quantum well was determined to be (0.29±0.02)m0 for a 2D hole density of 2.3×1012/cm2 at 3 K. The CR mass of 2DHGs in strained Si1−xGex is comparable to previous measurements of the CR mass of 2DHGs in strained InyGa1−yAs with similar 2D hole densities.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108627
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Heavy arsenic doping of silicon grown by atmospheric-pressure chemical vapor deposition at low temperatures (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 60 (1992), S. 454-456 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Arsenic doping of epitaxial grown Si over the temperature range from 850 °C to 550 °C was investigated in an ultraclean atmospheric-pressure chemical vapor deposition reactor. Growth was carried out from dichlorosilane (DCS) in H2 carrier gas. Arsenic could be incorporated into single crystal silicon at levels approaching 10 at. %. Carrier concentrations exceeding 1×1020/cm3 were obtained for the as-grown films. The material remained single-crystalline, as measured by ion channeling and cross-section transmission electron microscopy, and exhibited excellent surface morphology with no Hillock formation observed. AsH3 dramatically enhanced the growth rate of Si at lower temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.106632
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Selective growth of silicon-germanium alloys by atmospheric-pressure chemical vapor deposition at low temperatures (1991)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 59 (1991), S. 1479-1481 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Dichlorosilane and germane were used to grow silicon-germanium alloys at temperatures as low as 550 °C at atmospheric pressure. The silicon-germanium alloy composition was varied over the range 15%–44%. Films containing high Ge mole fractions were grown at a temperature of 625 °C and below and exhibit smooth surface morphology. Silicon-germanium/silicon multilayers with abrupt heterointerfaces have been achieved. Selective growth of silicon-germanium on oxide patterned silicon wafers was also demonstrated. A significant feature of the selective deposition is the lack of faceting at the oxide sidewall, which has been commonly observed in high-temperature silicon growth.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.105293
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    Cyclotron effective mass of holes in Si1−xGex/Si quantum wells: Strain and nonparabolicity effects (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1681-1683 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The Ge-composition dependence of cyclotron effective mass of quasi-two-dimensional holes in strained Si1−xGex/Si quantum well structures has been investigated by far-infrared magneto-optical spectroscopy at low temperatures and high magnetic fields up to 23 T. The in-plane effective mass determined from cyclotron resonance energies is much less than that of unstrained Si1−xGex alloys and decreases systematically from 0.40me to 0.29me as the Ge composition increases from x=0.13 to x=0.37, indicating the importance of the strain effect on the valence-band structure. The nonparabolicity correction is significant in explaining the discrepancy between the measured values and the calculated band-edge masses.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111830
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Fabrication of three-terminal resonant tunneling devices in silicon-based material (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 1699-1701 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Laterally gated three-terminal resonant tunneling devices have been fabricated from Si/Si1−xGex double-barrier structures grown by atmospheric pressure chemical vapor deposition. The gate is insulated from the submicrometer vertical channel by a low-temperature oxide and the entire fabrication scheme is compatible with current silicon technology. At T=77 K the resonant peak current can be modulated by 25% by applying a moderate gate voltage; at T=4.2 K, current modulation reaches 50%. We present calculations demonstrating that devices fabricated from optimized Si/Si1−xGex structures will pinch off fully at moderate gate voltages and operate at liquid nitrogen temperatures.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111838
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Selective growth of Si/SiGe resonant tunneling diodes by atmospheric pressure chemical vapor deposition (1992)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 61 (1992), S. 2872-2874 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Atmospheric pressure chemical vapor deposition is used to grow p-type Si/Si1−xGex double-barrier resonant tunneling structures on unstrained substrates, with a Si0.75Ge0.25 well clad by Si barriers. The current-voltage I(V) characteristics at T=77 and 4.2 K exhibit current peaks and negative differential resistance regions corresponding to resonant tunneling through well-resolved heavy- and light-hole subbands in the well. Device quality is comparable to Si/SiGe resonant tunneling structures grown by molecular beam epitaxy. The in situ substrate cleaning and selective growth capabilities of atmospheric pressure chemical vapor deposition are used for the first successful selective growth of resonant tunneling structures through an oxide mask. The resulting diodes exhibit good resonant tunneling characteristics. The selective growth process is promising for the fabrication of small vertical heterostructure devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.108061
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...