Publication Date:
2016-06-07
Description:
DLTS and EPR measurements are reported on aluminum-doped silicon that was irradiated at room temperature with high-energy electrons. Comparisons are made to comparable experiments on boron-doped silicon. Many of the same defects observed in boron-doped silicon are also observed in aluminum-doped silicon, but several others were not observed, including the aluminum interstitial and aluminum-associated defects. Damage production modeling, including the dependence on aluminum concentration, is presented.
Keywords:
ENERGY PRODUCTION AND CONVERSION
Type:
NASA. Lewis Res. Center Solar Cell High Efficiency and Radiation Damage, 1979; p 185-196
Format:
application/pdf
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