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High-energy electron-induced damage production at room temperature in aluminum-doped siliconDLTS and EPR measurements are reported on aluminum-doped silicon that was irradiated at room temperature with high-energy electrons. Comparisons are made to comparable experiments on boron-doped silicon. Many of the same defects observed in boron-doped silicon are also observed in aluminum-doped silicon, but several others were not observed, including the aluminum interstitial and aluminum-associated defects. Damage production modeling, including the dependence on aluminum concentration, is presented.
Document ID
19790024491
Acquisition Source
Legacy CDMS
Document Type
Conference Paper
Authors
Corbett, J. W. (State Univ. of New York Albany, NY, United States)
Cheng, L. J. (State Univ. of New York Albany, NY, United States)
Jaworowski, A. (State Univ. of New York Albany, NY, United States)
Karins, J. P. (State Univ. of New York Albany, NY, United States)
Lee, Y. H. (State Univ. of New York Albany, NY, United States)
Lindstroem, L. (Foersvaret Forskningsanstalt Stockholm, Sweden)
Mooney, P. M. (Vassar Coll. Albany, NY, United States)
Oehrlen, G. (State Univ. of New York Schenectady, N. Y., United States)
Wang, K. L. (GE Co.)
Date Acquired
August 9, 2013
Publication Date
August 1, 1979
Publication Information
Publication: NASA. Lewis Res. Center Solar Cell High Efficiency and Radiation Damage, 1979
Subject Category
Energy Production And Conversion
Accession Number
79N32662
Distribution Limits
Public
Copyright
Work of the US Gov. Public Use Permitted.

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IDRelationTitle19790024469Collected WorksSolar Cell High Efficiency and Radiation Damage, 1979
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