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  • 1
    Electronic Resource
    Electronic Resource
    The Metal-Semiconductor Interface (1980)
    Palo Alto, Calif. : Annual Reviews
    Annual Review of Materials Research 10 (1980), S. 65-83 
    Details
    ISSN: 0084-6600
    Source: Annual Reviews Electronic Back Volume Collection 1932-2001ff
    Topics: Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1146/annurev.ms.10.080180.000433
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  • 2
    Electronic Resource
    Electronic Resource
    Electron tunneling time measured by photoluminescence excitation correlation spectroscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 552-554 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tunneling time for electrons to escape from the lowest quasibound state in the quantum wells of GaAs/AlAs/GaAs/AlAs/GaAs double-barrier heterostructures with barriers between 16 and 62 A(ring) has been measured at 80 K using photoluminescence excitation correlation spectroscopy. The decay time for samples with barrier thicknesses from 16 A(ring) (≈12 ps) to 34 A(ring)(≈800 ps) depends exponentially on barrier thickness, in good agreement with calculations of electron tunneling time derived from the energy width of the resonance. Electron and heavy hole carrier densities are observed to decay at the same rate, indicating a coupling between the two decay processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100928
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  • 3
    Electronic Resource
    Electronic Resource
    Correlation between the surface defect distribution and minority carrier transport properties in GaN (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 3438-3440 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have studied linear dislocations and surface defects in p- and n-type metalorganic chemical vapor deposition, hydride vapor phase epitaxy, and molecular beam epitaxy grown GaN films on sapphire with atomic force microscopy. The surface pits due to threading dislocations were found not to be distributed randomly but on the boundaries of growth columns. The dislocations are thought to be electrically active since the average distance between them (average column size) is comparable to minority carrier diffusion lengths as measured by electron beam induced current experiments on Schottky diodes fabricated with the same material. Diffusion lengths found for holes and electrons are on the order of Lp=0.28 μm and Le=0.16 μm which corresponded to the sizes of regions free from surface dislocations in both cases and can be described by a simple model of recombination on grain boundaries. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122790
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  • 4
    Electronic Resource
    Electronic Resource
    Carrier lifetimes in ion-damaged GaAs (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 2424-2426 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence excitation correlation spectroscopy has been used to measure the dependence of carrier lifetime on the H+ ion implantation dose in GaAs. For doses greater than 1×1012 cm−2 the carrier lifetime is inversely proportional to the ion dose. The minimum lifetime measured was 0.6±0.2 ps for a dose of 1×1014 cm−2. Most important, there is no sign of saturation of carrier lifetime with ion dose down to this lifetime, thus still shorter lifetimes should be achievable with increased ion dose.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101096
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  • 5
    Electronic Resource
    Electronic Resource
    Si-Si1−xGex n-type resonant tunnel structures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1537-1539 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the first study of n-type Si-Si1−xGex resonant tunnel structures. Strain effects in these structures induce splittings of the sixfold conduction bands into twofold and fourfold states, and change the band-edge profiles considerably. We demonstrate that resonant tunneling due to twofold, fourfold, or twofold and fourfold electrons can be selectively achieved by a proper choice of the layer thicknesses and alloy concentrations in the barrier layers. The possibilities for using these phenomena for making electron filters and making accurate determinations of the band offsets are discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.102238
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  • 6
    Electronic Resource
    Electronic Resource
    Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1348-1350 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report large peak-to-valley current ratios in InAs/AlxGa1−xSb/InAs single-barrier tunnel structures. The mechanism for single-barrier negative differential resistance (NDR) has been proposed and demonstrated recently. A peak-to-valley current ratio of 3.4 (1.2) at 77 K (295 K), which is substantially larger than what has been previously reported, was observed in a 200-A(ring)-thick Al0.42Ga0.58Sb barrier. A comparison with a calculated current-voltage curve yields good agreement in terms of peak current and the slope of the NDR region. The single-barrier structure is a candidate for high-speed devices because of expected short tunneling times and a wide NDR region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101595
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  • 7
    Electronic Resource
    Electronic Resource
    Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1217-1219 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful growth of ZnTe on nearly lattice-matched III-V buffer layers of InAs (0.75%), GaSb (0.15%), and on GaAs and ZnTe by molecular beam epitaxy. In situ reflection high-energy electron diffraction measurements showed the characteristic streak patterns indicative of two-dimensional growth. Photoluminescence measurements on these films show strong and sharp features near the band edge with no detectable luminescence at longer wavelengths. The integrated photoluminescence intensity from the ZnTe layers increased with better lattice match to the buffer layer. The ZnTe epilayers grown on high-purity ZnTe substrates exhibited stronger luminescence than the substrates. We observe narrow luminescence linewidths (full width at half maximum ≈1–2 A(ring)) indicative of uniform high quality growth. Secondary-ion mass spectroscopy and electron microprobe measurements, however, reveal substantial outdiffusion of Ga and In for growths on the III-V buffer layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101659
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  • 8
    Electronic Resource
    Electronic Resource
    New negative differential resistance device based on resonant interband tunneling (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1094-1096 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and demonstrate a novel negative differential resistance device based on resonant interband tunneling. Electrons in the InAs/AlSb/GaSb/AlSb/InAs structure tunnel from the InAs conduction band into a quantized state in the GaSb valence band, giving rise to a peak in the current-voltage characteristic. This heterostructure design virtually eliminates many of the competing transport mechanisms which limit the performance of conventional double-barrier structures. Peak-to-valley current ratios as high as 20 and 88 are observed at room temperature and liquid-nitrogen temperature, respectively. These are the highest values reported for any tunnel structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101715
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  • 9
    Electronic Resource
    Electronic Resource
    X-ray photoelectron spectroscopy measurement of valence-band offsets for Mg-based semiconductor compounds (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3455-3457 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used x-ray photoelectron spectroscopy to measure the valence-band offsets for the lattice matched MgSe/Cd0.54Zn0.46Se and MgTe/Cd0.88Zn0.12Te heterojunctions grown by molecular beam epitaxy. By measuring core level to valence-band maxima and core level to core level binding energy separations, we obtain values of 0.56±0.07 eV and 0.43±0.11 eV for the valence-band offsets of MgSe/Cd0.54Zn0.46Se and MgTe/Cd0.88Zn0.12Te, respectively. Both of these values deviate from the common anion rule, as may be expected given the unoccupied cation d orbitals in Mg. Application of our results to the design of current II-VI wide band-gap light emitters is discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111239
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  • 10
    Electronic Resource
    Electronic Resource
    Surface morphology of silicon grown on CaF2/Si by electron-beam-assisted molecular-beam epitaxy (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 7328-7331 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The surface morphology of silicon, grown on epitaxial CaF2/Si by electron-beam-assisted molecular-beam-epitaxy was studied using atomic force microscopy, x-ray photoelectron spectroscopy, and low-energy electron diffraction. It was found that the roughness of the silicon overlayer was minimized by exposing the CaF2 to an electron dose of 1.0 mC/cm2 before growing the epitaxial silicon overlayer. The observed hexagonally shaped microcrystals formed by the silicon were explained by a model based on geometrical thermodynamics. Contact angle measurements yielded a Si—Ca interface bond strength of 2.5±0.3 eV and a free energy of 520±95 erg/cm2 for the irradiated CaF2 surface. © 1994 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358022
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