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  • 1
    Call number: 9783319969787 (e-book)
    Description / Table of Contents: Ecologists and natural resource managers are charged with making complex management decisions in the face of a rapidly changing environment resulting from climate change, energy development, urban sprawl, invasive species and globalization. Advances in Geographic Information System (GIS) technology, digitization, online data availability, historic legacy datasets, remote sensors and the ability to collect data on animal movements via satellite and GPS have given rise to large, highly complex datasets. These datasets could be utilized for making critical management decisions, but are often “messy” and difficult to interpret. Basic artificial intelligence algorithms (i.e., machine learning) are powerful tools that are shaping the world and must be taken advantage of in the life sciences. In ecology, machine learning algorithms are critical to helping resource managers synthesize information to better understand complex ecological systems. Machine Learning has a wide variety of powerful applications, with three general uses that are of particular interest to ecologists: (1) data exploration to gain system knowledge and generate new hypotheses, (2) predicting ecological patterns in space and time, and (3) pattern recognition for ecological sampling. Machine learning can be used to make predictive assessments even when relationships between variables are poorly understood. When traditional techniques fail to capture the relationship between variables, effective use of machine learning can unearth and capture previously unattainable insights into an ecosystem's complexity. Currently, many ecologists do not utilize machine learning as a part of the scientific process. This volume highlights how machine learning techniques can complement the traditional methodologies currently applied in this field
    Type of Medium: 12
    Pages: 1 Online-Ressource (xxiv, 441 Seiten) , Illustrationen, Diagramme, Karten
    ISBN: 9783319969787 , 978-3-319-96978-7
    Language: English
    Note: Contents Part I Introduction 1 Machine Learning in Wildlife Biology: Algorithms, Data Issues and Availability, Workflows, Citizen Science, Code Sharing, Metadata and a Brief Historical Perspective / Grant R. W. Humphries and Falk Huettmann 2 Use of Machine Learning (ML) for Predicting and Analyzing Ecological and ‘Presence Only’ Data: An Overview of Applications and a Good Outlook / Falk Huettmann, Erica H. Craig, Keiko A. Herrick, Andrew P. Baltensperger, Grant R. W. Humphries, David J. Lieske, Katharine Miller, Timothy C. Mullet, Steffen Oppel, Cynthia Resendiz, Imme Rutzen, Moritz S. Schmid, Madan K. Suwal, and Brian D. Young 3 Boosting, Bagging and Ensembles in the Real World: An Overview, some Explanations and a Practical Synthesis for Holistic Global Wildlife Conservation Applications Based on Machine Learning with Decision Trees / Falk Huettmann Part II Predicting Patterns 4 From Data Mining with Machine Learning to Inference in Diverse and Highly Complex Data: Some Shared Experiences, Intellectual Reasoning and Analysis Steps for the Real World of Science Applications / Falk Huettmann 5 Ensembles of Ensembles: Combining the Predictions from Multiple Machine Learning Methods / David J. Lieske, Moritz S. Schmid, and Matthew Mahoney 6 Machine Learning for Macroscale Ecological Niche Modeling - a Multi-Model, Multi-Response Ensemble Technique for Tree Species Management Under Climate Change / Anantha M. Prasad 7 Mapping Aboveground Biomass of Trees Using Forest Inventory Data and Public Environmental Variables within the Alaskan Boreal Forest / Brian D. Young, John Yarie, David Verbyla, Falk Huettmann, and F. Stuart Chapin III Part III Data Exploration and Hypothesis Generation with Machine Learning 8 ‘Batteries’ in Machine Learning: A First Experimental Assessment of Inference for Siberian Crane Breeding Grounds in the Russian High Arctic Based on ‘Shaving’ 74 Predictors / Falk Huettmann, Chunrong Mi, and Yumin Guo 9 Landscape Applications of Machine Learning: Comparing Random Forests and Logistic Regression in Multi-Scale Optimized Predictive Modeling of American Marten Occurrence in Northern Idaho, USA / Samuel A. Cushman and Tzeidle N. Wasserman 10 Using Interactions among Species, Landscapes, and Climate to Inform Ecological Niche Models: A Case Study of American Marten (Martes americana) Distribution in Alaska / Andrew P. Baltensperger 11 Advanced Data Mining (Cloning) of Predicted Climate-Scapes and Their Variances Assessed with Machine Learning: An Example from Southern Alaska Shows Topographical Biases and Strong Differences / Falk Huettmann 12 Using TreeNet, a Machine Learning Approach to Better Understand Factors that Influence Elevated Blood Lead Levels in Wintering Golden Eagles in the Western United States / Erica H. Craig, Tim H. Craig, and Mark R. Fuller Part IV Novel Applications of Machine Learning Beyond Species Distribution Models 13 Breaking Away from ‘Traditional’ Uses of Machine Learning: A Case Study Linking Sooty Shearwaters (Ardenna griseus) and Upcoming Changes in the Southern Oscillation Index / Grant R. W. Humphries 14 Image Recognition in Wildlife Applications / Dawn R. Magness 15 Machine Learning Techniques for Quantifying Geographic Variation in Leach’s Storm-Petrel (Hydrobates leucorhous) Vocalizations / Grant R. W. Humphries, Rachel T. Buxton, and Ian L. Jones Part V Implementing Machine Learning for Resource Management 16 Machine Learning for ‘Strategic Conservation and Planning’: Patterns, Applications, Thoughts and Urgently Needed Global Progress for Sustainability / Falk Huettmann 17 How the Internet Can Know What You Want Before You Do: Web-Based Machine Learning Applications for Wildlife Management / Grant R. W. Humphries 18 Machine Learning and ‘The Cloud’ for Natural Resource Applications: Autonomous Online Robots Driving Sustainable Conservation Management Worldwide? / Grant R. W. Humphries and Falk Huettmann 19 Assessment of Potential Risks from Renewable Energy Development and Other Anthropogenic Factors to Wintering Golden Eagles in the Western United States / Erica H. Craig, Mark R. Fuller, Tim H. Craig, and Falk Huettmann Part VI Conclusions 20 A Perspective on the Future of Machine Learning: Moving Away from ‘Business as Usual’ and Towards a Holistic Approach of Global Conservation / Grant R. W. Humphries and Falk Huettmann Index
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  • 2
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1878-1880 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The unstrained valence-band offset ΔEv for the x=0 and x=1 end points of the InxGa1−xAs/InP (100) heterojunction system has been measured by x-ray photoemission spectroscopy (XPS). Although the GaAs/InP and InAs/InP interfaces are strained because of lattice mismatch, the ΔEv values obtained by the XPS measurement method used are characteristic of an unstrained interface. Values of ΔEv (GaAs/InP)=0.19 eV and ΔEv (InAs/InP)=0.31 eV are observed. A linear interpolation between the x=0 and x=1 values gives ΔEv (In0.53 Ga0.47As/ InP)=0.25 eV for the x=0.53 lattice-matched interface (ΔEc /ΔEv =58/42).
    Type of Medium: Electronic Resource
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  • 3
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 72 (1992), S. 4757-4760 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Formation of Schottky barrier contacts to n-type 6H-SiC for a number of metals chosen to include a variety of physical and chemical properties has been investigated. The metals (Pd, Au, Ag, Tb, Er, Mn, Al, and Mg) were deposited onto room temperature surfaces terminated with a submonolayer coverage of oxygen. The metal/6H-SiC interface chemistry and Schottky barrier height φB during contact formation were obtained with x-ray photoemission spectroscopy; the electrical properties of subsequently formed thick contacts were characterized by current-voltage and capacitance-voltage techniques. The øB values for these metals extend over a wide 1.3 eV range. To a varying degree φB depends on the 6H-SiC crystal face (Si vs C). Mg and Al (Si face of latter) have φB=0.3 eV, a value which is suitable for nonalloyed ohmic contacts.
    Type of Medium: Electronic Resource
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3455-3457 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used x-ray photoelectron spectroscopy to measure the valence-band offsets for the lattice matched MgSe/Cd0.54Zn0.46Se and MgTe/Cd0.88Zn0.12Te heterojunctions grown by molecular beam epitaxy. By measuring core level to valence-band maxima and core level to core level binding energy separations, we obtain values of 0.56±0.07 eV and 0.43±0.11 eV for the valence-band offsets of MgSe/Cd0.54Zn0.46Se and MgTe/Cd0.88Zn0.12Te, respectively. Both of these values deviate from the common anion rule, as may be expected given the unoccupied cation d orbitals in Mg. Application of our results to the design of current II-VI wide band-gap light emitters is discussed.
    Type of Medium: Electronic Resource
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  • 5
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 5910-5912 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The relationship between the Al mole fraction (x) and the angular separation (Δθ) of film and substrate maxima in double axis x-ray diffraction rocking curves for strained epitaxial AlxGa1−xAs films on (110)- and (111)-oriented GaAs substrates was determined. It was derived from measured Δθ's for 5000-A(ring)-thick strained epitaxial AlAs films grown by molecular beam epitaxy on (110)- and (111)-oriented GaAs substrates and published values of the AlAs and GaAs lattice parameters and GaAs elastic constants. The critical thickness for relaxation appears to be significantly less for (111)- than for (100)- and (110)-oriented films.
    Type of Medium: Electronic Resource
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  • 6
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 1794-1796 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Metal Schottky barrier contacts to n-type (100) GaAs are described in which a 1 eV Schottky barrier height φB is achieved by using a very thin Si interface layer to influence the interface Fermi energy EiF. The metals investigated are Au, Cr, and Ti. The contact structure consists of a thick metal in combination with a ∼15–30 A(ring) heavily p-type Si interface layer. The EiF and interface composition during initial contact formation were obtained by x-ray photoemission spectroscopy (XPS); the φB for the corresponding thick contacts was measured by current-voltage (I-V) and capacitance-voltage (C-V) techniques. The XPS, I-V, and C-V measurements gave consistent results. The 1 eV φB for the Si interface layer contact structure is independent of the contact metal.
    Type of Medium: Electronic Resource
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  • 7
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 259-262 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used time-resolved reflection high energy electron diffraction (RHEED) measurements to study anion exchange reactions in molecular beam epitaxy (MBE) grown III-V semiconductors. In the experiment, InAs surfaces are exposed to Sbx fluxes and subsequent changes in the crystals RHEED patterns are examined. We find that when an InAs surface is initially exposed to an Sb flux the specular spot intensity first decreases, then recovers back toward its initial value. The shape of the intensity versus time curves is extremely reproducible if the absolute Sb flux and the Sb species are kept constant. The length of time required for the RHEED pattern to stabilize is much shorter for cracked Sb than for uncracked Sb. The RHEED dynamics are also faster if the total Sb flux increases. The behavior of the RHEED dynamics as a function of Sb flux and Sb species is consistent with the changes in the RHEED pattern being due to an Sb/As exchange reaction on the crystal's surface. The RHEED data are compared to previously published x-ray photoelectron spectroscopy (XPS) data which studied exchange reactions on InAs surfaces exposed to Sb fluxes. The XPS study confirmed that the incident Sb did indeed exchange with As in the epilayer and estimated the exposure time needed to complete the Sb/As exchange reaction. The time scales for exchange associated with the RHEED and XPS data are in good agreement. This further indicates that RHEED could be used to indirectly probe anion exchange reactions, potentially opening up several avenues of research ranging from basic materials science to MBE process control in manufacturing.
    Type of Medium: Electronic Resource
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  • 8
    Electronic Resource
    Electronic Resource
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 372-378 
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: X-ray photoemission spectroscopy (XPS) has been used to measure the valence-band offset ΔEv for the lattice-matched InP/ In0.53Ga0.47As and In0.53Ga0.47As/ In0.52Al0.48As heterojunction interfaces. The heterojunctions were formed by molecular-beam epitaxy. We obtain values of ΔEv (InP/In0.53Ga0.47As) =0.34 eV (ΔEc/ ΔEv=43/57) and ΔEv (In0.53Ga0.47As/ In0.52Al0.48As) =0.22 eV (ΔEc/ ΔEv =68/32) for the respective interfaces. By combining these measurements with available XPS ΔEv (InP/ In0.52Al0.48As) data we find that band offset transitivity is satisfied. Accordingly, the band offsets for heterojunction pairs formed from InP, In0.53Ga0.47As, and In0.52Al0.48As are not influenced by interface specific effects.
    Type of Medium: Electronic Resource
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  • 9
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 66 (1995), S. 2981-2983 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have used x-ray photoelectron spectroscopy (XPS) to measure the dependence of the InAs/GaSb valence band offset on both interface composition and growth order. Molecular beam epitaxy was used to grow InAs-on-GaSb and GaSb-on-InAs interfaces with both InSb-like and GaAs-like interface compositions. Analysis of XPS core level separations showed no dependence of the valence band offset on interface composition; however, a 90 meV increase in the valence band offset was observed for InAs grown on GaSb compared to GaSb grown on InAs. This difference is attributed to the extended nature of the InAs-on-GaSb interface. Results from analysis of an intentionally extended GaSb-on-InAs interface were consistent with this conclusion. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
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  • 10
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 62 (1993), S. 2685-2687 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The electrical properties and interface chemistry of unannealed and annealed Ni, Ti, and Al contacts to both Si (0001) and C (0001¯) terminated faces of 6H-SiC are compared by using x-ray photoemission spectroscopy, current-voltage, and capacitance-voltage data. For annealing temperatures in the 400 to 600 °C range Ni and Ti contacts have significantly more dissociation of interface SiC and formation of reaction products for the C-face than the Si-face. The chemical reactivity of the Al contact was limited and equal for both faces. Stability of the Schottky barrier height with annealing, which has a wide variation according to metal and face, is not correlated with the degree of metal/6H-SiC interface chemical reactivity
    Type of Medium: Electronic Resource
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