ALBERT

All Library Books, journals and Electronic Records Telegrafenberg

X
feed icon rss

Your email was sent successfully. Check your inbox.

An error occurred while sending the email. Please try again.

Proceed reservation?

Export
  • 1
    Electronic Resource
    Electronic Resource
    Electron tunneling time measured by photoluminescence excitation correlation spectroscopy (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 552-554 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The tunneling time for electrons to escape from the lowest quasibound state in the quantum wells of GaAs/AlAs/GaAs/AlAs/GaAs double-barrier heterostructures with barriers between 16 and 62 A(ring) has been measured at 80 K using photoluminescence excitation correlation spectroscopy. The decay time for samples with barrier thicknesses from 16 A(ring) (≈12 ps) to 34 A(ring)(≈800 ps) depends exponentially on barrier thickness, in good agreement with calculations of electron tunneling time derived from the energy width of the resonance. Electron and heavy hole carrier densities are observed to decay at the same rate, indicating a coupling between the two decay processes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100928
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 2
    Electronic Resource
    Electronic Resource
    Demonstration of large peak-to-valley current ratios in InAs/AlGaSb/InAs single-barrier heterostructures (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1348-1350 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report large peak-to-valley current ratios in InAs/AlxGa1−xSb/InAs single-barrier tunnel structures. The mechanism for single-barrier negative differential resistance (NDR) has been proposed and demonstrated recently. A peak-to-valley current ratio of 3.4 (1.2) at 77 K (295 K), which is substantially larger than what has been previously reported, was observed in a 200-A(ring)-thick Al0.42Ga0.58Sb barrier. A comparison with a calculated current-voltage curve yields good agreement in terms of peak current and the slope of the NDR region. The single-barrier structure is a candidate for high-speed devices because of expected short tunneling times and a wide NDR region.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101595
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 3
    Electronic Resource
    Electronic Resource
    Growth and characterization of ZnTe films grown on GaAs, InAs, GaSb, and ZnTe (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1217-1219 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the successful growth of ZnTe on nearly lattice-matched III-V buffer layers of InAs (0.75%), GaSb (0.15%), and on GaAs and ZnTe by molecular beam epitaxy. In situ reflection high-energy electron diffraction measurements showed the characteristic streak patterns indicative of two-dimensional growth. Photoluminescence measurements on these films show strong and sharp features near the band edge with no detectable luminescence at longer wavelengths. The integrated photoluminescence intensity from the ZnTe layers increased with better lattice match to the buffer layer. The ZnTe epilayers grown on high-purity ZnTe substrates exhibited stronger luminescence than the substrates. We observe narrow luminescence linewidths (full width at half maximum ≈1–2 A(ring)) indicative of uniform high quality growth. Secondary-ion mass spectroscopy and electron microprobe measurements, however, reveal substantial outdiffusion of Ga and In for growths on the III-V buffer layers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101659
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 4
    Electronic Resource
    Electronic Resource
    New negative differential resistance device based on resonant interband tunneling (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 1094-1096 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We propose and demonstrate a novel negative differential resistance device based on resonant interband tunneling. Electrons in the InAs/AlSb/GaSb/AlSb/InAs structure tunnel from the InAs conduction band into a quantized state in the GaSb valence band, giving rise to a peak in the current-voltage characteristic. This heterostructure design virtually eliminates many of the competing transport mechanisms which limit the performance of conventional double-barrier structures. Peak-to-valley current ratios as high as 20 and 88 are observed at room temperature and liquid-nitrogen temperature, respectively. These are the highest values reported for any tunnel structure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101715
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 5
    Electronic Resource
    Electronic Resource
    Auger lifetime enhancement in InAs–Ga1−xInxSb superlattices (1994)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 64 (1994), S. 3160-3162 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have experimentally and theoretically investigated the Auger recombination lifetime in InAs–Ga1−xInxSb superlattices. Data were obtained by analyzing the steady-state photoconductive response to frequency-doubled CO2 radiation, at intensities varying by over four orders of magnitude. Theoretical Auger rates were derived, based on a k⋅p calculation of the superlattice band structure in a model which employs no adjustable parameters. At 77 K, both experiment and theory yield Auger lifetimes which are approximately two orders of magnitude longer than those in Hg1−xCdxTe with the same energy gap. This finding has highly favorable implications for the application of InAs–Ga1−xInxSb superlattices to infrared detector and nonlinear optical devices.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.111325
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 6
    Electronic Resource
    Electronic Resource
    Electrical determination of the valence-band discontinuity in HgTe-CdTe heterojunctions (1987)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 51 (1987), S. 2230-2232 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Current-voltage behavior is studied experimentally in a Hg0.78Cd0.22Te-CdTe-Hg0.78Cd0.22Te heterostructure grown by molecular beam epitaxy. At temperatures above 160 K, energy-band diagrams suggest that the dominant low-bias current is thermionic hole emission across the CdTe barrier layer. This interpretation yields a direct determination of 390±75 meV for the HgTe-CdTe valence-band discontinuity at 300 K. Similar analyses of current-voltage data taken at 190–300 K suggest that the valence-band offset decreases at low temperatures in this heterojunction.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.98949
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 7
    Electronic Resource
    Electronic Resource
    Fabrication and dc, microwave characteristics of submicron Schottky-collector AlAs/In0.53Ga0.47As/InP resonant tunneling diodes (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 77 (1995), S. 4819-4821 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report the fabrication and dc, microwave characteristics of 0.1 μm, Schottky-collector resonant tunnel diodes (SRTDs) in the AlAs/In0.53Ga0.47As/InP material system. Devices with contact areas as small as 0.05 μm2 have been fabricated using electron beam lithography with an interrupted footprint T-gate process. SRTD's fabricated with 1.4 nm AlAs barriers exhibited a 5×105 A/cm2 peak current density at 0.95 V and a −19 mS/μm2 peak negative conductance. The devices incorporate fully depleted P-doped cap layers to suppress surface leakage currents. From the measured dc and microwave characteristics, a maximum frequency of oscillation fmax=2.2 THz is estimated. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359405
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 8
    Electronic Resource
    Electronic Resource
    High structural quality Ga1−xInxSb/InAs strained-layer superlattices grown on GaSb substrates (1992)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 71 (1992), S. 211-214 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Strained Ga1−xInxSb/InAs superlattices exhibiting a high degree of structural perfection have been grown on GaSb substrates. The superlattices display ideal, defect-free structure, to within the resolution limits of transmission electron microscopy (TEM) and high-resolution x-ray diffraction. Cross-sectional micrographs reveal the layers to be highly planar, regular, and coherently strained to the GaSb substrates. No crystalline defects were observable by TEM, despite an internal lattice mismatch of almost 2%. Planarity of the layers is confirmed by the presence of Pendellösung fringes in high-resolution x-ray diffraction, while the observation of numerous sharp satellite peaks indicates little or no interdiffusion within the superlattices. Observed x-ray diffraction is closely fit by simulations based on a kinematical model which accounts properly for the highly strained interfaces and absence of strict translational symmetry in the superlattice growth direction. Based on this fit, an InSb-rich character is assigned to the interfaces, yielding superlattice layer thicknesses and compositions that are in quantitative agreement with those derived from independent growth rate calibrations.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.350744
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 9
    Electronic Resource
    Electronic Resource
    Observation of large peak-to-valley current ratios and large peak current densities in AlSb/InAs/AlSb double-barrier tunnel structures (1989)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 66 (1989), S. 5106-5108 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report improved peak-to-valley current ratios and peak current densities in InAs/AlSb double-barrier, negative differential resistance tunnel structures. Our peak-to-valley current ratios are 2.9 at room temperature and 10 at liquid-nitrogen temperatures. Furthermore, we have observed peak current densities of 1.7×105 A/cm2. These figures of merit are substantially better than previously reported values. The improvements are obtained by adding spacer layers near the barriers, thinner well regions, and thinner barriers.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.343742
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
  • 10
    Electronic Resource
    Electronic Resource
    Energy-band diagrams and current-voltage characteristics of single-barrier tunnel structures (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 3836-3844 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Energy-band diagrams of single-barrier heterostructures are calculated by solving Poisson's equation self-consistently. The implications of these energy-band profiles for the electronic properties of a few tunnel structures of current interest are discussed. The voltage drops across the cladding layers are found to be significant, in contrast with the commonly made assumption that all of the applied voltage drops linearly across the barrier layer. Furthermore, energy-band diagrams have substantial effects upon calculated tunneling current-voltage characteristics, which are extremely sensitive to the actual shape of the barrier through which the charge carriers tunnel. It is found that, in some cases, the dominant current transport mechanisms may be quite different from those expected when band bending is neglected.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339225
    Location Call Number Expected Availability
    BibTip Others were also interested in ...
    Paper (German National Licenses)
    Fulltext
Close ⊗
This website uses cookies and the analysis tool Matomo. More information can be found here...