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  • 1
    Publication Date: 2014-08-22
    Description: In graphene-based electronic devices like in transistors, the field effect applied thanks to a gate electrode allows tuning the charge density in the graphene layer and passing continuously from the electron to the hole doped regime across the Dirac point. Homogeneous doping is crucial to understand electrical measurements and for the operation of future graphene-based electronic devices. However, recently theoretical and experimental studies highlighted the role of the electrostatic edge due to fringing electrostatic field lines at the graphene edges [P. Silvestrov and K. Efetov, Phys. Rev. B 77 , 155436 (2008); F. T. Vasko and I. V. Zozoulenko, Appl. Phys. Lett. 97 , 092115 (2010)]. This effect originates from the particular geometric design of the samples. A direct consequence is a charge accumulation at the graphene edges giving a value for the density, which deviates from the simple picture of a plate capacitor and also varies along the width of the graphene sample. Entering the quantum Hall regime would, in principle, allow probing this accumulation thanks to the extreme sensitivity of this quantum effect to charge density and the charge distribution. Moreover, the presence of an additional and counter-propagating edge channel has been predicted [P. Silvestrov and K. Efetov, Phys. Rev. B 77 , 155436 (2008)] giving a fundamental aspect to this technological issue. In this article, we investigate this effect by tuning a high mobility graphene wire into the quantum Hall regime in which charge carriers probe the electrostatic potential at high magnetic field close to the edges. We observe a slight deviation to the linear shift of the quantum Hall plateaus with magnetic field and we study its evolution for different filling factors, which correspond to different probed regions in real space. We discuss the possible origins of this effect including an increase of the charge density towards the edges.
    Print ISSN: 0021-8979
    Electronic ISSN: 1089-7550
    Topics: Physics
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  • 2
    Publication Date: 2014-08-08
    Description: Over the past two decades, single-walled carbon nanotubes (SWCNTs) have received much attention because their extraordinary properties are promising for numerous applications. Many of these properties depend sensitively on SWCNT structure, which is characterized by the chiral index (n,m) that denotes the length and orientation of the circumferential vector in the hexagonal carbon lattice. Electronic properties are particularly strongly affected, with subtle structural changes switching tubes from metallic to semiconducting with various bandgaps. Monodisperse 'single-chirality' (that is, with a single (n,m) index) SWCNTs are thus needed to fully exploit their technological potential. Controlled synthesis through catalyst engineering, end-cap engineering or cloning strategies, and also tube sorting based on chromatography, density-gradient centrifugation, electrophoresis and other techniques, have delivered SWCNT samples with narrow distributions of tube diameter and a large fraction of a predetermined tube type. But an effective pathway to truly monodisperse SWCNTs remains elusive. The use of template molecules to unambiguously dictate the diameter and chirality of the resulting nanotube holds great promise in this regard, but has hitherto had only limited practical success. Here we show that this bottom-up strategy can produce targeted nanotubes: we convert molecular precursors into ultrashort singly capped (6,6) 'armchair' nanotube seeds using surface-catalysed cyclodehydrogenation on a platinum (111) surface, and then elongate these during a subsequent growth phase to produce single-chirality and essentially defect-free SWCNTs with lengths up to a few hundred nanometres. We expect that our on-surface synthesis approach will provide a route to nanotube-based materials with highly optimized properties for applications such as light detectors, photovoltaics, field-effect transistors and sensors.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Sanchez-Valencia, Juan Ramon -- Dienel, Thomas -- Groning, Oliver -- Shorubalko, Ivan -- Mueller, Andreas -- Jansen, Martin -- Amsharov, Konstantin -- Ruffieux, Pascal -- Fasel, Roman -- England -- Nature. 2014 Aug 7;512(7512):61-4. doi: 10.1038/nature13607.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉1] nanotech@surfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dubendorf, Switzerland [2] Nanotechnology on Surfaces Laboratory, Instituto de Ciencia de Materiales de Sevilla (CSIC-US), Avenida Americo Vespucio 49, E-41092 Sevilla, Spain (J.R.S.-V.); BASF SE, GVM/I-L 544, 67056 Ludwigshafen, Germany (A.M.); University Erlangen-Nuremberg, Institut fur Organische Chemie II, Henkestrasse 42, 91054 Erlangen, Germany (K.A.). ; nanotech@surfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dubendorf, Switzerland. ; Laboratory for Reliability Science and Technology, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dubendorf, Switzerland. ; 1] Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, Germany [2] Nanotechnology on Surfaces Laboratory, Instituto de Ciencia de Materiales de Sevilla (CSIC-US), Avenida Americo Vespucio 49, E-41092 Sevilla, Spain (J.R.S.-V.); BASF SE, GVM/I-L 544, 67056 Ludwigshafen, Germany (A.M.); University Erlangen-Nuremberg, Institut fur Organische Chemie II, Henkestrasse 42, 91054 Erlangen, Germany (K.A.). ; Max Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569 Stuttgart, Germany. ; 1] nanotech@surfaces Laboratory, Empa, Swiss Federal Laboratories for Materials Science and Technology, 8600 Dubendorf, Switzerland [2] Department of Chemistry and Biochemistry, University of Bern, Freiestrasse 3, 3012 Bern, Switzerland.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/25100481" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0028-0836
    Electronic ISSN: 1476-4687
    Topics: Biology , Chemistry and Pharmacology , Medicine , Natural Sciences in General , Physics
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  • 3
    Publication Date: 2014-04-20
    Description: A two-dimensional (2D) porous layer can make an ideal membrane for separation of chemical mixtures because its infinitesimal thickness promises ultimate permeation. Graphene--with great mechanical strength, chemical stability, and inherent impermeability--offers a unique 2D system with which to realize this membrane and study the mass transport, if perforated precisely. We report highly efficient mass transfer across physically perforated double-layer graphene, having up to a few million pores with narrowly distributed diameters between less than 10 nanometers and 1 micrometer. The measured transport rates are in agreement with predictions of 2D transport theories. Attributed to its atomic thicknesses, these porous graphene membranes show permeances of gas, liquid, and water vapor far in excess of those shown by finite-thickness membranes, highlighting the ultimate permeation these 2D membranes can provide.〈br /〉〈span class="detail_caption"〉Notes: 〈/span〉Celebi, Kemal -- Buchheim, Jakob -- Wyss, Roman M -- Droudian, Amirhossein -- Gasser, Patrick -- Shorubalko, Ivan -- Kye, Jeong-Il -- Lee, Changho -- Park, Hyung Gyu -- New York, N.Y. -- Science. 2014 Apr 18;344(6181):289-92. doi: 10.1126/science.1249097.〈br /〉〈span class="detail_caption"〉Author address: 〈/span〉Nanoscience for Energy Technology and Sustainability, Department of Mechanical and Process Engineering, Eidgenossische Technische Hochschule (ETH) Zurich, Sonneggstrasse 3, CH-8092 Zurich, Switzerland.〈br /〉〈span class="detail_caption"〉Record origin:〈/span〉 〈a href="http://www.ncbi.nlm.nih.gov/pubmed/24744372" target="_blank"〉PubMed〈/a〉
    Print ISSN: 0036-8075
    Electronic ISSN: 1095-9203
    Topics: Biology , Chemistry and Pharmacology , Computer Science , Medicine , Natural Sciences in General , Physics
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  • 4
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1384-1386 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on nonlinear electrical properties of three-terminal ballistic junctions (TBJs) based on high-electron-mobility GaInAs/InP quantum-well structures. Nonlinear electrical transport behavior of the TBJs is found, and we show a correlation between this behavior and the linear regime of electron transmission in the devices. We also study device geometry effects on these electrical properties of the TBJs. Finally, we demonstrate room-temperature operation of the devices. The results obtained are compared with recent predictions by Xu [H. Q. Xu, Appl. Phys. Lett. 78, 2064 (2001)] and good agreement is found. © 2001 American Institute of Physics.
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  • 5
    Electronic Resource
    Electronic Resource
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 1357-1359 
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We demonstrate an artificial electronic nanomaterial, constructed by arrangement of nanometer-sized symmetry-breaking elements into a two-dimensional lattice. The material exhibits intrinsic nonlinear electronic functionality, and therefore functions also as a two-dimensional ratchet. We show that individual devices can be made by simply cutting pieces from the material. We also demonstrate that these devices operate at temperatures up to room temperature and at frequencies at least up to 50 GHz. © 2001 American Institute of Physics.
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  • 6
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We have measured at low temperatures the conductance of electron waveguides fabricated from modulation-doped quantum wells by wet etching and regrowth. We have found that, for a waveguide with abruptly changed geometry at the entrance and exit, the conductance shows oscillations, which are superimposed on a conventional conductance plateau structure. The periods and amplitudes of conductance oscillations depend on the length to width aspect ratio of the waveguide. In addition, the amplitudes of conductance oscillations decrease with increasing temperature. We propose that the observed oscillations are caused by the formation of longitudinal resonant electron states in the waveguide, in analogy with optical Fabry–Perot effects. © 2000 American Institute of Physics.
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  • 7
    ISSN: 1573-7357
    Source: Springer Online Journal Archives 1860-2000
    Topics: Physics
    Notes: Abstract Bulk samples and 50–125 μm thick films of (1-x)YBa2Cu3O7−δ-xBaTiO3 (0⩽x⩽0.12 by weight) composites have been synthesized, the films being obtained by Stokes sedimentation on SrTiO3 ceramic plates and firing in oxygen by Melt Textured Growth techniques. The phase composition and texture have been studied by X-ray diffraction and microstructure. Resistance and magnetic susceptibility of prepared samples have been measured.
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  • 8
    ISSN: 1573-8663
    Keywords: binary systems ; lutecium niobate ; relaxor ; phase diagram ; dielectric and electromechanical properties
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract Solid solution series of the (1 - x)Pb(Lu1/2Nb1/2)O3 - x PbTiO3 binary system ceramics (PLuNT) were synthesized and hot-pressed (temperature 950°C to 1130°C, pressure 25 MPa); its structure, dielectric and piezoelectric properties were studied. Pure lutecium niobate PLuN (x = 0) has a pronounced long-range order in the B-sublattice and an antiferroelectric to paraelectric phase transition at ∼258°C. The phase structure of the PLuNT system, at room temperature, changes from a pseudomonoclinic (psd-M, space group Bmm2) to tetragonal (T, space group P4mm). The pseudomonoclinic phase extends over the 0 ≤ x ≤ 0.38 interval within which the monoclinic angle β proceeds a minimum near to 90° at x ≅ 0.2. The morphotropic region covers the interval x = 0.38 - 0.49, the concentration ratio psd-M:T≅ 1 (the morphotropic phase boundary—MPB) corresponds to x = 0.41. Within the morphotropic region, a rather strong distortion of the unit cell—(c/a - 1)≥ 0.02, β ≥ 90.37º, characteristic of “hard” piezoelectrics is maintained. Dielectric dispersion and broadening of the phase transition, features typical to relaxors, are observed within the concentration interval of 0.1 ≤ x ≤ 0.3. The highest electromechanical coupling coefficients: kp = 0.66, kt = 0.48, k31 = 0.34 of (1 - x) PLuN−xPT ceramics are attained in compositions near the MPB at x ≈ 0.41. Non-isovalent doping of PLuNT with La3+ in Pb sublattice shifts the MPB to lower values of x.
    Type of Medium: Electronic Resource
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  • 9
    Publication Date: 2003-09-22
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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  • 10
    Publication Date: 2001-08-27
    Print ISSN: 0003-6951
    Electronic ISSN: 1077-3118
    Topics: Physics
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