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  • 1
    Electronic Resource
    Electronic Resource
    Thermal behavior and stability of room-temperature continuous AlxGa1−xAs-GaAs quantum well heterostructure lasers grown on Si (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 2854-2860 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on the thermal characteristics of p-n AlxGa1−xAs-GaAs quantum well heterostructure (QWH) diode lasers grown on Si substrates. Continuous 300-K operation for over 10 h is demonstrated for lasers mounted with the junction side away from the heat sink ("junction-up'') and the heat dissipated through the Si substrate. "Junction-up'' diodes that are grown on Si substrates have measured thermal impedances that are 38% lower than those grown on GaAs substrates, with further reductions possible. Thermal impedance data on "junction-down'' diodes are presented for comparison. Measured values are consistent with calculated values for these structures. Low sensitivity of the lasing threshold current to temperature is also observed, as is typical for QWH lasers, with T0 values as high as 338 °C.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341596
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  • 2
    Electronic Resource
    Electronic Resource
    High-power disorder-defined coupled stripe AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure lasers (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 55 (1989), S. 271-273 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented describing continuous (cw) room-temperature laser operation of AlyGa1−yAs-GaAs-InxGa1−xAs quantum well heterostructure (QWH) phase-locked arrays. The ten-stripe arrays have 3 μm emitters, with emitter to emitter spacing of 4 μm, and are patterned onto the QWH crystal using a self-aligned Si-O impurity-induced layer disordering (IILD) procedure. The IILD process is devised to provide limited layer intermixing to ensure optical coupling (across ∼1 μm). The coupled stripe QWH lasers exhibit narrow twin-lobed far-field patterns that show unambiguously phase locking in the highest order supermode. The cw output power of the lasers (differential quantum efficiency 52%) is shown from threshold (∼75 mA) to over 280 mW (both facets, no optical coatings).
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101926
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  • 3
    Electronic Resource
    Electronic Resource
    Room-temperature 1.5 μm photoluminescence of Er3+-doped AlxGa1−xAs native oxides (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 72 (1998), S. 3411-3413 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating 300 K, continuous wave (cw) photoluminescence near λ=1.53 μm from Er-implanted Al0.8Ga0.2As films oxidized in water vapor (N2+H2O, 500 °C) and annealed (1 h, 700 °C) in Ar+O2. The 40 nm full width at half-maximum (FWHM) spectra are 1.5× broader and ∼10× more intense relative to spectra from unoxidized but annealed samples. The fluorescence decay shows a τ=7 ms lifetime, with a faster τ=1.9 ms component characteristic of a cooperative upconversion mechanism. The data suggest that AlxGa1−xAs native oxides may provide a suitable host for rare-earth optical activity. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.121649
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  • 4
    Electronic Resource
    Electronic Resource
    High-power gain-guided coupled-stripe quantum well laser array by hydrogenation (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 52 (1988), S. 691-693 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-power coupled-stripe (ten-stripe) AlxGa1−xAs-GaAs quantum well lasers that are fabricated by hydrogenation are described. Continuous (cw) room-temperature thresholds as low as Ith=90 mA and internal quantum efficiency as high as 85% are demonstrated. Continuous 300 K laser operation generating 2×375 mW (0.75 W) at 910 mA (10Ith) or 57% efficiency is described (8-μm-wide stripes on 12 μm centers). Minimal heating effects are observed up to the point of catastrophic failure.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99349
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  • 5
    Electronic Resource
    Electronic Resource
    Effects of microcracking on AlxGa1−xAs-GaAs quantum well lasers grown on Si (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 874-876 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented demonstrating continuous (cw) 300 K operation of p-n AlxGa1−xAs-GaAs quantum well heterostructure lasers grown on Si and fabricated with naturally occurring microcracks running parallel to or perpendicular to the laser stripe. Operation for over 17 h is demonstrated for a diode with a parallel microcrack inside the active region. Diodes with microcracks perpendicular to the laser stripe exhibit relatively "square'' light output versus current (L-I) characteristics and spectral behavior indicating internal reflections involving coupled multiple (internal) cavities. The lasers have operated (cw, 300 K) as long as 16 h.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.100100
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  • 6
    Electronic Resource
    Electronic Resource
    Low-temperature operating life of continuous 300-K AlxGa1−xAs-GaAs quantum-well heterostructure lasers grown on Si (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 69 (1991), S. 6844-6849 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on the continuous (cw) 77–200 K operational characteristics of cw 300-K AlxGa1−xAs-GaAs quantum-well heterostructure diode lasers grown on Si substrates. Operation is demonstrated for over 500 h with a junction temperature as high as ∼200 K for a diode previously operated cw 300 K for over 10 h with its junction side mounted away from the heat sink. The data indicate that longer cw 300-K lifetimes than previously demonstrated (17 h) may be possible. The effects of the optical power level on the degradation rate are examined, and it is shown that the maximum cw 300-K power output for these devices (∼30 mW/facet) is limited by catastrophic facet degradation. The effects of naturally occurring microcracks on device stability are also considered, and the effect of stress on the output polarization is measured and discussed.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.347674
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  • 7
    Electronic Resource
    Electronic Resource
    Anomalous threshold current and time delays in index-guided AlxGa1−xAs-GaAs quantum-well lasers (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 4356-4362 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Anomalous threshold current (Ith) variation with temperature and with pulse length, and large delays (up to 6 μs) between excitation and the turn-on of stimulated emission are observed in index-guided AlxGa1−xAs-GaAs quantum-well heterostructure (QWH) lasers. These effects are found in laser diodes incorporating "spike'' doping layers (δ-Mg and δ-Se) within the QWH active region and that are fabricated via laser-assisted Si impurity-induced layer disordering. The introduction of contaminants during the localized melting and regrowth of the laser-induced layer disordering, and the effect of these impurities (or defects) with the active region "spike'' doping create traps. The traps cause Ith to increase (not decrease) at lower temperature and at shorter current pulses, and cause time delay in turn-on of the operation.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339068
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  • 8
    Electronic Resource
    Electronic Resource
    Supermode behavior of coupled two-stripe AlxGa1−xAs-GaAs quantum-well heterostructure lasers (1987)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 62 (1987), S. 381-385 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Data are presented on the simplest form of multiple-stripe laser array, a gain-guided two-stripe configuration of wide spacing (∼15 μm, weak or moderate coupling), showing the effects of the two forms of supermode oscillation on the laser's L-I characteristic, far-field emission pattern, and radiation spectrum. Measurements of the spatial dependence of the gain, at various currents, for a modified (antireflection-coated) two-stripe AlxGa1−xAs-GaAs quantum-well heterostucture laser diode provides a basis for explaining the onset of oscillations of both forms of supermodes (n=1, symmetric or "even,'' and n=2, antisymmetric or "odd''). These results agree with the significant band filling of the single quantum well and the supermode energy splitting of ∼15 meV in high-level laser operation. The data and results presented are obtained by operating antireflection-coated diodes in a tunable external grating cavity and by taking gain measurements on and between the stripes at the Fabry–Perot facets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.339808
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  • 9
    Electronic Resource
    Electronic Resource
    Oxidized AlxGa1−xAs heterostructure planar waveguides (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 3078-3080 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Waveguiding by total internal reflection is demonstrated within AlxGa1−xAs semiconductor heterostructures which have been fully oxidized in water vapor at ∼490 °C. Refractive index, mode propagation constant, propagation loss (≤3 cm−1) at λ0=1.3 and 1.55 μm, secondary ion mass spectrometry depth profile, and Fourier transform infrared transmission spectra measurements are presented to characterize a multimode single-heterostructure oxide waveguide. An index contrast of Δn=0.06 is observed between oxidized x=0.4 and x=0.8 AlxGa1−xAs oxide layers. Absorption loss at 1.55 μm is observed due to OH groups. Near-field images are presented showing waveguiding in a single-mode oxide double heterostructure. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.125236
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  • 10
    Electronic Resource
    Electronic Resource
    Refractive index and hygroscopic stability of AlxGa1−xAs native oxides (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 75 (1999), S. 1110-1112 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present prism coupling measurements on AlxGa1−xAs native oxides showing the dependence of refractive index on composition (0.3≤x≤0.97), oxidation temperature (400≤T≤500), and carrier gas purity. Index values range from n=1.490 (x=0.9, 400 °C) to 1.707 (x=0.3, 500 °C). The oxides are shown to adsorb moisture, increasing their index by up to 0.10 (7%). Native oxides of AlxGa1−xAs (x≤0.5) have index values up to 0.27 higher and are less hygroscopic when prepared with a small amount of O2 in the N2+H2O process gas. The higher index values are attributed to a transition from a hydroxide to a denser (AlxGa1−x)2O3 oxide phase. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.124612
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