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  • 1
    Electronic Resource
    Electronic Resource
    Direct observation of the Cu2−xSe phase of Cu-rich epitaxial CuInSe2 grown on GaAs (001) (1998)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 84 (1998), S. 6926-6928 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Cu2−xSe is an important impurity phase of the ternary chalcopyrite semiconductor CuInSe2 associated with Cu/In composition ratios greater than unity. We have observed directly in a prototypical epitaxial system the formation of Cu2−xSe on Cu-rich CuInSe2 thin films epitaxially grown on GaAs (001). Atomic force microscopy measurements of the surface topology of as-grown films clearly show faceted rectangular crystallites with dimensions on the order of 100 nm. Cross-sectional transmission electron microscopy measurements of the Cu-rich CuInSe2 showed rectangular protrusions on the surface as well as wedge shaped facets in the CuInSe2 film. Two-dimensional reciprocal space x-ray mapping of the as-grown Cu-rich CuInSe2 showed the in-plane lattice constant of the Cu2−xSe phase to be partially strained to the CuInSe2 layer. The presence of the β phase of Cu2−xSe is also presented as an alternative explanation for Cu–Pt ordering reports in CuInSe2 that have appeared in the literature. Strain-related surface undulations observed only in Cu-rich CuInSe2 are also linked to the presence of this strained Cu2−xSe layer. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.368991
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  • 2
    Electronic Resource
    Electronic Resource
    Effects of the surface Cu2−xSe phase on the growth and properties of CuInSe2 films (1999)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 74 (1999), S. 1630-1632 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Drastic changes in average molecularities (m=Cu/In) from m(very-much-greater-than)1 to m=0.92–0.93 and in hole concentrations from p(very-much-greater-than)1019 cm−3 to as low as p=7.5×1016 cm−3 have been observed in molecular beam epitaxy grown CuInSe2 after selective etching of the Cu–Se phase by a KCN aqueous solution; high hole concentrations and Cu-excess compositions of the as-grown films were attributed to the Cu–Se phase. On the other hand, well-defined photoluminescence emissions were found characteristic of intrinsic CuInSe2. The presence of the Cu–Se phase made possible the growth of high-quality CuInSe2 epitaxial films at a temperature well below the melting point of any Cu–Se compound. Surface topology measurements showed that the surface of the as-grown films was not fully covered by Cu–Se grains, leaving holes with depths of 200–300 nm after KCN etching. The enhanced two-dimensional growth and the reduced defect concentration imply that a very thin Cu-excess surface layer controls the growth of CuInSe2 when grown under Cu-excess conditions. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.123639
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  • 3
    Electronic Resource
    Electronic Resource
    Static analysis of off-axis crystal film growth onto a lattice-mismatched substrate (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 608-610 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface construction of tilt growth that is sometimes observed for epilayer growth on a lattice mismatched substrate is modeled on the basis that tilt relieves misfit strain in the epilayer. In this model off-axis misfit accommodation is assumed to be due to only tilt dislocations or tilt dislocations combined with misfit dislocations. The average interval between successive dislocations which are formed along the interface can be estimated using the lattice units of both materials and that of the epilayer in another principal axis direction; the tilt angle can also be calculated geometrically. The tilt angle predicted by this model agrees well with experimental results for several examples of mismatched epilayer growth by molecular-beam epitaxy. The model suggests a method to grow a single domain of stress-free epilayer by using a substrate cut to an angle that allows off-axis fit to the lattice unit of the epilayer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385801
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  • 4
    Electronic Resource
    Electronic Resource
    Uniaxial locked epitaxy of ZnO on the a face of sapphire (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1801-1803 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality, c-oriented ZnO epitaxial films have been grown on the a surface using molecular-beam epitaxy. The use of a-oriented sapphire eliminates rotational domains and related structural defects which have limited the use of ZnO in electronic applications. The ZnO epitaxial layers are uniquely oriented with the ZnO/sapphire orientational relationship [0001]||[112¯0] and 〈112¯0〉||[0001]. This unique orientation is a consequence of the anisotropy of the a-sapphire surface in conjunction with a strong correlation along a single direction leading to the term uniaxial locked epitaxy. High-resolution x-ray diffraction measurements show an increase in x-ray lateral coherence length from several tens of nanometers to 〉0.7 μm for growth of c-oriented ZnO on the a surface as opposed to the c surface of sapphire. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311603
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  • 5
    Electronic Resource
    Electronic Resource
    Effect of strain and temperature on anomalously large interdiffusion in InAsP/InP heterostructures (1997)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 70 (1997), S. 3410-3412 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present evidence for anomalously large, strain-dependent interdiffusion in InAs1−xPx layers grown on InP(001) substrates by organometallic vapor phase epitaxy at 620 °C. Specifically, there are strong indications for the existence of a "critical strain:" if the strain is ∼1.9% or more, much P–As mixing occurs, but for smaller strain the mixing is greatly decreased. The interdiffusion is also highly sensitive to temperature. A set of samples grown at 580 °C exhibits a factor of ∼2 decrease in P–As mixing compared to a set grown at 620 °C. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.119187
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  • 6
    Electronic Resource
    Electronic Resource
    Excitonic emissions from CuInSe2 on GaAs(001) grown by molecular beam epitaxy (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1289-1291 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: CuInSe2 epitaxial films grown on (001)-oriented GaAs substrates by molecular beam epitaxy have been characterized by means of low temperature photoluminescence spectroscopy at T=2–102 K. Distinct emission lines were observed near the band gap, and have been investigated further with varying sample temperature. An emission at 1.0386 eV (EX1) became broader with increasing sample temperature, and still remained up to T=102 K. A distinct, sharp emission at 1.0311 eV (IX1) which disappeared at a significantly lower temperature than the other peaks was observed only in films with weak donor-related emissions. We attribute such emissions to the ground-state free exciton [FEn=1] and exciton bound to neutral acceptor [A0,X], respectively. The band gap of CuInSe2 epitaxial films was also determined to be Eg=1.046 eV at 2 K using the reported exciton binding energy of Eex=7 meV. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114400
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  • 7
    Electronic Resource
    Electronic Resource
    Photoluminescence investigation of Hg acceptor in GaAs (1995)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 67 (1995), S. 1465-1467 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Photoluminescence spectroscopy has been used to investigate the behavior of Hg, implanted into MBE-grown GaAs. A new recombination path in the near-band-edge region at 1.51291 eV is identified with the neutral Hg-bound exciton recombination (Hg°X), with a localization energy following an anti-Haynes' rule. The electron-acceptor and donor-acceptor transitions are displayed at 1.466 and 1.463 eV, respectively. From the temperature dependence of the photoluminescence, the value of 52.5 meV is extracted for the binding energy of the Hg acceptor in GaAs. With the resonant excitation of the Hg°X line, the electronic signature of the Hg acceptor in GaAs is further evidenced, with the observation of two-hole transitions. Transitions to 2s as well as 3s states are resolved, with Raman shifts of 37.2 and 44.8 meV, respectively. The corresponding binding energies are thus 15.3 and 7.7 meV, respectively. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.114496
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  • 8
    Electronic Resource
    Electronic Resource
    Evidence of crystalline diamond in thin films prepared by laser ablation of hard fullerene-based carbon (1996)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 80 (1996), S. 1182-1185 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Thin carbon films have been prepared by ArF excimer laser ablation of hard fullerene-based carbon in vacuum. The target material was obtained from pressure–temperature treatment of C60 fullerene. Micro-Raman, electron energy loss, and electron diffraction measurements of deposited films reveal distinct evidence of a small microcrystalline diamond fraction. This appears to be the observation of crystalline diamond produced by laser ablation of a nondiamond target. © 1996 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.362856
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  • 9
    Electronic Resource
    Electronic Resource
    Electrical properties of Si(100) films doped with low-energy (≤150 eV) Sb ions during growth by molecular beam epitaxy (1988)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 53 (1988), S. 1732-1734 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: A low-energy ultrahigh-vacuum compatible ion gun with single-grid optics was used to provide accelerated Sb ion doping during the growth of Si(100) by molecular beam epitaxy (MBE). The incorporation probability of accelerated Sb in MBE Si films grown at 800 °C with an ion acceleration potential of 150 eV was near unity, more than four orders of magnitude higher than for thermal Sb. The films exhibited complete dopant substitutionality and temperature-dependent electron mobilities were equal to the best reported bulk Si values for Sb concentrations up to 2×1019 cm−3, more than an order of magnitude higher than obtainable by thermal Sb doping during Si MBE. Transmission electron microscopy examination of all films showed no evidence of dislocations or other extended defects.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.99809
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  • 10
    Electronic Resource
    Electronic Resource
    Epitaxial growth of Si by ArF laser-excited supersonic free jets of Si2H6 (1993)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 63 (1993), S. 3473-3475 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Epitaxial growth processes of Si from ArF laser-excited Si2H6 supersonic free jets have been investigated using reflection high-energy electron diffraction, growth rate, and atomic force microscopy measurements. Layer-by-layer epitaxial growth was observed at substrate temperature Ts=670 °C regardless of the laser excitation. However, it was found that island growth was predominant at Ts=550 °C without the laser excitation, while layer-by-layer growth occurred by using the ArF laser-excited Si2H6 jet probably due to an enhancement of surface reactions induced by precursor species obtained from laser-excited Si2H6 .
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.110124
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