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  • 1
    Electronic Resource
    Electronic Resource
    Gas source molecular beam epitaxy growth of TlInP for new infrared optical devices (1997)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 81 (1997), S. 1704-1707 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Gas source molecular beam epitaxy growth of TlInP (thallium indium phosphide) on (100) InP substrate is described. TlInP is an important constituent material of newly proposed novel infrared optical device material, TlInGaP, which can be lattice-matched to InP. Reflection high-energy electron diffraction reveals the (2×2), (2×4), and (4×2) streak patterns corresponding to the P-excess, P-stabilized and group-III rich surfaces, respectively. However, facet pattern emerges in the low temperature (380 °C) growth. This pattern is consistent with the scanning electron microscopy image; hatched pattern along the [011] direction, which is caused by insufficient migration of group III adatoms on the surface. Double crystal x-ray diffraction rocking curves for TlP on InP and TlInP on InP samples clearly show the peak from TlP and TlInP as well as that from InP substrate. The peak position is changed with Tl/In flux ratio. Photoluminescence emission is observed for TlInP grown on InP. © 1997 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.364013
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  • 2
    Electronic Resource
    Electronic Resource
    New measuring system for the distribution of a magnetic force by using an optical fiber (1993)
    [S.l.] : American Institute of Physics (AIP)
    Review of Scientific Instruments 64 (1993), S. 243-246 
    Details
    ISSN: 1089-7623
    Source: AIP Digital Archive
    Topics: Physics , Electrical Engineering, Measurement and Control Technology
    Notes: A new measuring system using an optical fiber and a position sensing photodetector was developed to measure a three-dimensional distribution of a magnetic force. A steel ball attached to a cantilever made of an optical fiber generated force in a magnetic field. The displacement of the ball due to the force was detected by a position-sensing photodetector with the capability of detecting two-directional coordinates of the position. By scanning the sensing system in a magnetic field, we obtained distributions of two-directional component of the magnetic force vector. The component represents the gradient of a squared magnetic field. The usefulness of the system for measuring the magnetic field distribution in a narrow clearance and for evaluating superconducting machine components such as magnetic bearings was verified experimentally.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1144444
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  • 3
    Electronic Resource
    Electronic Resource
    Growth of aligned carbon nanotubes by plasma-enhanced chemical vapor deposition: Optimization of growth parameters (2001)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 90 (2001), S. 1529-1533 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Direct-current plasma-enhanced chemical vapor deposition (CVD) with mixtures of acetylene and ammonia was optimized to synthesize aligned carbon nanotubes (CNTs) on Co- or Ni-covered W wires with regard to wire temperature, wire diameter, gas pressure, and sample bias. A phase diagram of CNT growth was established experimentally in this optimization process. It was revealed by transmission electron microscopy that Co-catalyzed CNTs encapsulated a Co carbide nanoparticle at their tip, disagreeing with a previous report that Co particles were located at the base of CNTs CVD grown on Co-covered Si substrates [C. Bower et al., Appl. Phys. Lett. 77, 2767 (2000)]. This leads to the conclusion that the formation mechanism of aligned CNTs depends significantly on the catalyst support material as well as the catalyst material itself. Since the sample bias strongly affected the morphology of CNTs, the selective supply of positive ions to CNT tips was possibly responsible for the alignment of growing CNTs. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1382848
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  • 4
    Electronic Resource
    Electronic Resource
    A convergent lattice approximation for nonlinear electromagnetic fields in four dimensions (1993)
    College Park, Md. : American Institute of Physics (AIP)
    Journal of Mathematical Physics 34 (1993), S. 3327-3342 
    Details
    ISSN: 1089-7658
    Source: AIP Digital Archive
    Topics: Mathematics , Physics
    Notes: A discrete version of the quaternionic Cauchy–Riemann equation ∂A=F, where F is Gauss–Poisson white noise, is discussed. On the lattice δZ4 random variables Fδ(δn) and Aδ(δn) are constructed which approximate the corresponding random fields F and A, respectively, in the limit δ→0. In the Gaussian case the random variables Aδ(δn) can be interpreted as the lattice approximation of the free electromagnetic Euclidean potential field whereas in the non-Gaussian case one obtains an approximation of nonlinear interacting electromagnetic quantum fields. Convergence to the continuum limit is proven.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.530079
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  • 5
    Electronic Resource
    Electronic Resource
    Static analysis of off-axis crystal film growth onto a lattice-mismatched substrate (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 608-610 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The interface construction of tilt growth that is sometimes observed for epilayer growth on a lattice mismatched substrate is modeled on the basis that tilt relieves misfit strain in the epilayer. In this model off-axis misfit accommodation is assumed to be due to only tilt dislocations or tilt dislocations combined with misfit dislocations. The average interval between successive dislocations which are formed along the interface can be estimated using the lattice units of both materials and that of the epilayer in another principal axis direction; the tilt angle can also be calculated geometrically. The tilt angle predicted by this model agrees well with experimental results for several examples of mismatched epilayer growth by molecular-beam epitaxy. The model suggests a method to grow a single domain of stress-free epilayer by using a substrate cut to an angle that allows off-axis fit to the lattice unit of the epilayer. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1385801
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  • 6
    Electronic Resource
    Electronic Resource
    Carbon nanotubes as electron source in an x-ray tube (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 78 (2001), S. 2578-2580 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Field emitters comprised of aligned carbon nanotubes are shown to be promising as a primary electron source in an x-ray tube working in a nonultrahigh vacuum ambience. At a pressure of 2×10−7 Torr, the nanotube emitters continue to emit electrons for more than 1 h, and yield better resolved x-ray images than do thermionic emitters, independently of whether the sample is biological or nonbiological. The near-uniformity in energy distribution of electrons emitted from carbon nanotubes might be related to the improved image quality in the field-emission mode. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1367278
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  • 7
    Electronic Resource
    Electronic Resource
    Optical properties of GaN-rich side of GaNP and GaNAs alloys grown by gas-source molecular beam epitaxy (1998)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 73 (1998), S. 2630-2632 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: GaN-rich side of GaNP and GaNAs layers is grown at 750 °C by gas-source molecular beam epitaxy. Phase separation is observed for the layers with P and As composition of over 1.5% and 1%, respectively. Photoluminescence (PL) spectra for the non-phase-separated GaNP (P composition: 0.37%) and GaNAs (As composition: 0.26%) show redshift of 50 and 40 meV, respectively, from that of GaN, and exhibit Stokes shift of about 80 meV which is smaller than that of GaN (100 meV). On the other hand, the PL spectrum for the phase-separated GaNP shows a large redshift peaking at 2.101 eV. This peak is considered to be an emission from the phase-separated GaP-rich GaPN region. PL excitation spectrum shows two large broad peaks. One at 2.982 eV corresponds to the absorption at the Γ point of GaP-rich region, and the other at 2.308 eV corresponds to the absorption at the isoelectronic band edge of GaP-rich GaPN alloy originated from the X point of GaP. In the case of phase-separated GaNAs, no PL is observed, suggesting that the optical properties are much more sensitive to crystalline quality in GaAs-rich GaAsN than in GaP-rich GaPN. © 1998 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.122535
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  • 8
    Electronic Resource
    Electronic Resource
    Uniaxial locked epitaxy of ZnO on the a face of sapphire (2000)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 77 (2000), S. 1801-1803 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: High-quality, c-oriented ZnO epitaxial films have been grown on the a surface using molecular-beam epitaxy. The use of a-oriented sapphire eliminates rotational domains and related structural defects which have limited the use of ZnO in electronic applications. The ZnO epitaxial layers are uniquely oriented with the ZnO/sapphire orientational relationship [0001]||[112¯0] and 〈112¯0〉||[0001]. This unique orientation is a consequence of the anisotropy of the a-sapphire surface in conjunction with a strong correlation along a single direction leading to the term uniaxial locked epitaxy. High-resolution x-ray diffraction measurements show an increase in x-ray lateral coherence length from several tens of nanometers to 〉0.7 μm for growth of c-oriented ZnO on the a surface as opposed to the c surface of sapphire. © 2000 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1311603
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  • 9
    Electronic Resource
    Electronic Resource
    A One-Step Sandwich Enzyme Immunoassay for Human Matrix Metalloproteinase 9 Using Monoclonal Antibodies (1994)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 732 (1994), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1994.tb24752.x
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  • 10
    Electronic Resource
    Electronic Resource
    Interaction between Progelatinase A and TIMP-2 (1994)
    Oxford, UK : Blackwell Publishing Ltd
    Annals of the New York Academy of Sciences 732 (1994), S. 0 
    Details
    ISSN: 1749-6632
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Natural Sciences in General
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1749-6632.1994.tb24762.x
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