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  • 1
    Electronic Resource
    Electronic Resource
    Explanation of spurious features in tungsten deposition using an atomic momentum model (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 4157-4163 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Adequate uniformity of thin film coverage is necessary in very large scale integration. Recently, cross-sectional scanning electron microscope micrographs of thin films deposited by sputter systems producing highly directional flux have exhibited unusual growth features. A model based on the momenta of the incident sputter flux and resultant asymmetric diffusion has been developed to explain the effects and has been incorporated into simulation of ballistic deposition, a Monte Carlo simulation package. Experimental growth of tungsten films deposited over VLSI topography is presented illustrating the unique features of the deposited films which necessitated the use of the momentum model. The model reflects a general effect for thin film growth in sputtering systems that is more apparent for directional deposition, for example, tungsten deposition at low pressure or when using a collimated system. Experimental results of tungsten films deposited over high aspect ratio contact cuts are carefully compared to simulations incorporating the atomic momentum model. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.359875
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  • 2
    Electronic Resource
    Electronic Resource
    Theoretical and practical aspects of collimated sputtering (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 76 (1994), S. 4857-4862 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Aspects and implications of collimated sputtering have been studied through experiments and simulations. Dependences and scaling relationships of via bottom coverage, deposition efficiency, thickness and coverage uniformity, and collimator lifetime have been examined. Geometrically, collimator effectiveness, transmission efficiency, and target erosion-related nonuniformity scale principally with collimator cell aspect ratio. Ripple variations in thickness and coverage depend not only on aspect ratio, but also on the ratio of cell depth to the collimator-substrate distance. Collimator lifetime depends on cell size, aspect ratio, and on the positions of the collimator and substrate in front of the target. Such geometrical factors are complicated by scattering by the sputter gas which scales according to the product of pressure and the appropriate distance.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.358444
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  • 3
    Electronic Resource
    Electronic Resource
    Experimental study and computer simulation of collimated sputtering of titanium thin films over topographical features (1993)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 74 (1993), S. 1339-1344 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: An experimental study and computer simulation of collimated sputtering of titanium (Ti) thin films onto submicrometer trenches is presented. The effect of square grid collimators with aspect ratios varying from 0.5 to 2 has been studied. Simulation of collimated sputtering involves the combination of the simulation of sputter distributions vapor transport model and the simulation by ballistic deposition film growth model. This combination is able to simulate the effect of collimation on the spatial and angular distributions of deposited atoms, and is able to predict the film coverage, deposition rate change, and microstructure of the deposited films. Both experimental and simulation results show that bottom coverage in trenches of aspect ratio 1.2 can be significantly improved from 50% to more than 80% using collimation. However, a penalty is paid by a corresponding decrease in deposition rate down to 15% of the uncollimated value. Additionally, the microstructure (grain size and orientation) is altered by collimation. The good agreement between the simulation and experimental results indicates that the model will be very useful for predicting and optimizing the properties of films deposited by collimated sputtering over topographical features.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.354889
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  • 4
    Electronic Resource
    Electronic Resource
    Compositional variations in Ti-W films sputtered over topographical features (1994)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 75 (1994), S. 8114-8120 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: To study compositional variations in Ti-W films sputtered from Ti-W alloy targets and deposited over topographical features, the sticking coefficients and angular distributions of sputtered flux arriving at the substrate for titanium (Ti) and tungsten (W) atoms have been investigated by an overhang structure, pinhole experiment, and simulation package. The simulation involves the combination of a vapor transport model which is able to model the angular distributions for the respective materials, and a film growth model which is able to predict the compositional variation of the deposited Ti-W films over topographical features. Experimentally, it was found that the sticking coefficients of Ti and W are both very close to unity for the conditions considered. However, the angular distributions of these two materials are quite different due to their different transport properties through the sputter gas. For the Ti-W films, the compositional variations calculated using the simulated angular distributions agreed well with the ones measured experimentally. This result clearly demonstrates that the differences between the angular distributions of Ti and W atoms cause the compositional variations in the films. In the case of Ti-W films deposited over vias or trenches, the films on the sidewalls are Ti enriched, but on the bottom are Ti deficient. The good agreement between the simulation and experimental results indicates that the model will be very useful for predicting and optimizing the properties of films deposited by alloy targets.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.356531
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  • 5
    Electronic Resource
    Electronic Resource
    Effects and loss of lead in doped Bi-Sr-Ca-Cu-O films (1989)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 54 (1989), S. 1929-1931 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Films of Bi-Sr-Ca-Cu-O, with and without lead doping, were prepared by rf magnetron sputtering of oxide targets. The films were annealed in oxygen for varying durations and characterized by electron microprobe and x-ray diffraction. The results show a drastic loss of lead during annealing. Films with the lead-enhanced Bi2Sr2Ca2Cu3Oy (2223) phase had no detectable lead after annealing. The films were seen to grow in stages of 2201, 2212, and finally 2223 phases. The lead affected film development through these stages.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.101499
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  • 6
    Electronic Resource
    Electronic Resource
    Simulation of the effect of bulk vacancy diffusion on the shape of sputtered films deposited onto trenches and vias (1995)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 78 (1995), S. 3572-3579 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We present a model for the shape evolution of a thin metal film due to the bulk diffusion of vacancies. High-temperature Al sputter deposition and postdeposition annealing are currently becoming significant (very large scale integrated circuit metallization processes. The attractiveness of these processes lies in the ability to fill and planarize high-aspect-ratio vias and contacts with very few process steps. Previous attempts to model these processes have not fully emphasized the role played by bulk diffusion and three-dimensional curvature. We present the differential equation and boundary conditions that describe the flow of vacancies in metal films. An approximate method of solution for this equation system is presented and incorporated into the thin-film deposition simulator SIMBAD (simulation of ballistic deposition). This simulator is then used to present results pertaining to both postdeposition annealing and high-temperature sputter deposition. Particular emphasis is placed upon determining the effects of via and contact geometries, wetting angles and deposition rate during sputtering. © 1995 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.360708
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  • 7
    Electronic Resource
    Electronic Resource
    Density variation of tungsten films sputtered over topography (1991)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 70 (1991), S. 4295-4300 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: Density and resistivity of sputtered tungsten films are directly measured as a function of angle-of-vapor incidence. The film density is found to drop off quickly at deposition angles greater than 50°, and the resistivity rises sharply at angles greater than 70°. These deposition angle effects in films deposited over topography can be predicted using simulation by ballistic deposition (SIMBAD), a two-dimensional computer simulation of thin-film growth using ballistic deposition of hard disks. Simulated film structure and density is in good agreement with real tungsten films deposited over vias. To confirm density predictions, etch rate measurements made on planar films are presented which confirm the dependence of etch rate on film density. The results of the measurement are used to develop an etching algorithm using SIMBAD density predictions. Films deposited over vias are etched to reveal the presence of low-density regions of film covering the via sidewalls, showing excellent agreement with the simulation results.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.349107
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  • 8
    Electronic Resource
    Electronic Resource
    Discrete-path transport theory of physical sputtering (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 92 (2002), S. 1699-1708 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The fundamentals of low-energy physical sputtering currently attract increasing interest in relation to ion-based and plasma-based micro- and nanofabrication technologies. However, explaining sputtering in the sub-keV bombardment regime has long been a challenge for the kinetic theory, partly because of a simplistic treatment of the surface. Here, transport theory of sputtering is formulated, which includes a more realistic analytical model of the surface in a semi-infinite target. In contrast to the traditional theory, which is based on the linearized Boltzmann equation, the new approach uses the discrete-path master equation for particle transport in matter. Starting from the discrete-path formalism, the deflection of incoming projectiles and focusing of emitted particles when they pass the surface are described by a unified few-collision approach and combined with the bulk master equation through sophisticated boundary conditions. The numerical results are compared with available experiments. Major anisotropies that affect differential sputtering yields in the sub-keV bombardment regime are considered as obtained from the kinetic modeling. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1488245
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  • 9
    Electronic Resource
    Electronic Resource
    Nodular defect growth in thin films (1992)
    Springer
    Journal of materials science 3 (1992), S. 64-70 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Notes: Abstract The formation and microstructure of nodular defects in thin films of sputtered Ti and evaporated MgF2 are studied and modelled. Unintentional nodular defects in Ti occurred from growth onto uncleaned substrates whereas nodule growth in MgF2 was initiated by seeding the substrate with polystyrene spheres. Nodules grew in a characteristic shape consisting of a cone with a domed top, and with the nodule separated from the bulk of the film by a low density boundary. Simulation of nodule growth by a ballistic deposition model in two and three dimensions confirmed this nodular shape, but also predicted that a low density region extends into the nodule from the boundary. Further predictions of the minimum seed size required to initiate nodule growth lead to suggestions for a technique for film adatom mobility measurement.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00701096
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  • 10
    Electronic Resource
    Electronic Resource
    Nodular defect growth in thin films (1992)
    Springer
    Journal of materials science 3 (1992), S. 200-200 
    Details
    ISSN: 1573-482X
    Source: Springer Online Journal Archives 1860-2000
    Topics: Electrical Engineering, Measurement and Control Technology , Mechanical Engineering, Materials Science, Production Engineering, Mining and Metallurgy, Traffic Engineering, Precision Mechanics
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1007/BF00695522
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