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  • 1
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    Late Quaternary paleoenvironmental changes in the southeastern Yellow Sea, Korea (2006)
    In:  EPIC3Quaternary International, 144, pp. 38-52
    Details
    Publication Date: 2019-07-16
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , isiRev
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  • 2
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    Paleoenvironmental changes in the northern East China Sea and the Yellow Sea since the last deglaciation marine transgression (2003)
    In:  EPIC3Journal of the Geological Society of Korea, 39(2), pp. 149-160
    Details
    Publication Date: 2019-07-16
    Repository Name: EPIC Alfred Wegener Institut
    Type: Article , peerRev
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  • 3
    Electronic Resource
    Electronic Resource
    Characterization of Lactoferrin (LF) from Colostral Whey Using Anti-LF Antibody Immunoaffinity Chromatography (2002)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 67 (2002), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: : Lactoferrin (LF) in colostral whey was isolated by anti-LF immunoglobulin in yolk (IgY)-Sepharose 4B immunoaffinity chromatography, and parameters such as binding capacity (qm) and dissociation constant (Kd, × 10−6 M) of this immunoaffinity gel for LF were discussed. Purification folds for colostral whey I (from colostrum collected within 6 d of postpartum) and colostral whey II (from colostrum collected within 1 d of postpartum) by anti-LF IgY-immunoaffinity chromatography were 135.80 and 103.60, respectively. The recovery for LF in the same colostral whey sample by anti-LF IgY-immunoaffinity chromatography was 82 to 99 %. qm of anti-LF IgY-immunoaffinity gel for LF in colostral whey I and whey II were 0.372 and 0.272 mg LF/mL wet gel, respectively. Kd of anti-LF IgY-immunoaffinity gel for LF in colostral whey I was 1.594 × 10−6 M and II was 1.587 × 10−6 M.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.2002.tb09442.x
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  • 4
    Electronic Resource
    Electronic Resource
    Properties of Liposomes Prepared with Various Lipids (2002)
    Oxford, UK : Blackwell Publishing Ltd
    Journal of food science 67 (2002), S. 0 
    Details
    ISSN: 1750-3841
    Source: Blackwell Publishing Journal Backfiles 1879-2005
    Topics: Agriculture, Forestry, Horticulture, Fishery, Domestic Science, Nutrition , Process Engineering, Biotechnology, Nutrition Technology
    Notes: : Use of several lipids as an alternative to cholesterol to prepare stable liposomes was tried. Liposome prepared at 1/0.25 lecithin/stearic acid ratio exhibited better (55%) encapsulation efficiency (EE) of bovine serum albumin (BSA) than that (41%) prepared at 1/0.25 lecithin/cholesterol ratio. Liposomes showed the minimal released percentage of encapsulated BSA at pH 6. Storage at −20 °C caused serious damage to liposomes. Addition of α–tocopherol was effective in stabilizing liposomes. Liposomes, incorporated with α–amylase, prepared at 1/0.25 lecithin/cholesterol or stearic acid ratio were effective in protecting enzyme against acid (pH 2.8) and pepsin (15 mg/mL). Use of stearic acid, instead of cholesterol, would be feasible in preparing stable liposomes.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1111/j.1365-2621.2002.tb08820.x
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  • 5
    Electronic Resource
    Electronic Resource
    Heteroepitaxial growth of ZnSe on (111) Si by low-pressure metalorganic chemical vapor deposition (1988)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 64 (1988), S. 4241-4243 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe epitaxial layers were successfully grown on (111) Si substrates by low-pressure metalorganic chemical vapor deposition. It is not necessary that the reactant inlet tubes project to near the substrates. From x-ray and scanning electron microscopy examinations, single-crystalline ZnSe epilayers with mirrorlike surfaces can be obtained. The carrier concentration profile shows that the carrier distribution in the epilayer is very uniform. The electron mobility of the epilayer at room temperature is 280 cm2 /V s. The efficient 77-K photoluminescence indicates that the ZnSe epilayers are of good quality.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.341292
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  • 6
    Electronic Resource
    Electronic Resource
    Compact, high-current accelerators and their prospective applications (1991)
    New York, NY : American Institute of Physics (AIP)
    Physics of Fluids 3 (1991), S. 2396-2402 
    Details
    ISSN: 1089-7666
    Source: AIP Digital Archive
    Topics: Physics
    Notes: This paper briefly surveys the three compact, high-current accelerators that are presently under development in the United States in support of a national program. In addition, it reports recent experimental results from the Naval Research Laboratory (NRL) modified betatron [Phys. Rev. Lett. 64, 2374 (1990)] with emphasis on the electron-cyclotron resonance that presently limits the energy of the beam to approximately 18 MeV. Finally, it briefly addresses selective existing and prospective applications of accelerators.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.859609
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  • 7
    Electronic Resource
    Electronic Resource
    Growth and characterization of beryllium-based II–VI compounds (1999)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 85 (1999), S. 512-517 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: We report on the growth and characterization of beryllium–chalcogenide layers prepared on GaAs (100) by molecular beam epitaxy. Be- and Te-terminated BeTe surfaces show (4×1) and (2×1) reconstructions, respectively. The stability of each surface is investigated by reflection high energy electron diffraction as a function of substrate temperature. The dependence of growth rate of BeTe on growth temperature and Be cell temperature is investigated. The best full width at half maximum (FWHM) of a (400) x-ray rocking curve of BeTe is 78 arcsec. The dependence of the ZnBeSe energy gap on Be composition is obtained by four-crystal x-ray diffraction (XRD) and low temperature photoluminescence measurements. The energy gap of Zn1−xBexSe varies as Eg=0.0107x+2.790 (eV) for small Be composition (x〈0.25) at 77 K. Lattice-matched ZnBeSe (Eg=2.82 eV) and ZnMgBeSe (Eg=2.975 eV) layers show narrower XRD peaks, the FWHM values of which are 64 and 21 arcsec, respectively. The variation of FWHM of x-ray rocking curve due to lattice misfit is investigated for ZnMgBeSe quaternaries with various lattice misfits extending from compressive to tensile strain. The FWHM value under compressive strain increases more steeply with lattice misfit than that under tensile strain. © 1999 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.369479
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  • 8
    Electronic Resource
    Electronic Resource
    Band alignment of ZnSe/Zn0.75Mg15Be10Se heterostructures (2002)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 91 (2002), S. 5811-5814 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: The optical properties and band alignment of ZnSe/ZnMgBeSe heterostructures are investigated. Two sets of ZnSe/ZnMgBeSe multi-quantum-well structures that consist of five or three wells with different well thicknesses and 100-nm-thick ZnMgBeSe barrier layers are grown on GaAs (100) substrates by molecular beam epitaxy. Low-temperature photoluminescence spectra show dominant sharp excitonic emission whose peak position systematically shifts to the higher energy side with decreasing the well thickness. Photoluminescence excitation spectra show optical transitions between excited quantum levels in addition to the ground levels. The standard analysis based on the effective-mass approximation gives the valence band offset of ΔEυ=(0.4±0.1)ΔEg. This is consistent with calculated values based on Harrison's linear combination of atomic orbitals theory. © 2002 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1468279
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  • 9
    Electronic Resource
    Electronic Resource
    Characterization of the ZnSe heteroepilayer on a GaAs/Si substrate (1990)
    [S.l.] : American Institute of Physics (AIP)
    Journal of Applied Physics 67 (1990), S. 3898-3900 
    Details
    ISSN: 1089-7550
    Source: AIP Digital Archive
    Topics: Physics
    Notes: ZnSe is a semiconductor with a direct band gap of 2.68 eV at room temperature, which makes it one of the most important materials for blue electroluminescent devices and short wavelength laser diodes. In this communication, heteroepitaxial growth of ZnSe on a GaAs/Si substrate by low-pressure organometallic chemical vapor deposition is reported. The ZnSe/GaAs/Si epilayer exhibits a uniform surface morphology. Strong photoluminescence near-band-edge emission was observed. The thickness of the GaAs buffer layer seems to be an important factor in the energy shift of the photoluminescence peak.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.344996
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  • 10
    Electronic Resource
    Electronic Resource
    Aluminum-doped n-type ZnTe layers grown by molecular-beam epitaxy (2001)
    Woodbury, NY : American Institute of Physics (AIP)
    Applied Physics Letters 79 (2001), S. 785-787 
    Details
    ISSN: 1077-3118
    Source: AIP Digital Archive
    Topics: Physics
    Notes: N-type ZnTe layers with high electron concentration are grown by molecular-beam epitaxy using aluminum as the donor species. The ZnTe:Al layers show a high structural quality with a narrow x-ray diffraction linewidth (24 arcsec) and a high carrier concentration up to n=4×1018 cm−3 with low resistivity (ρ=0.017 Ω cm). The dependence of the electron mobility on the carrier concentration suggests that the dominant scattering mechanisms in the ZnTe:Al layers are ionized impurity scattering and polar optical phonon scattering. The photoluminescence spectrum of moderately doped ZnTe layers shows strong Al–donor-related bound exciton lines: I2 (2.378 eV) and donor–acceptor pair emission (zero phonon energy=2.324 eV) with a weak deep-level emission (2.19 eV). Highly Al-doped layers show an increase in the deep-level emission intensity and a decrease in carrier mobility, which are interpreted in terms of the increase in the carrier compensation. © 2001 American Institute of Physics.
    Type of Medium: Electronic Resource
    URL: http://dx.doi.org/10.1063/1.1390481
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