Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
79 (2001), S. 785-787
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
N-type ZnTe layers with high electron concentration are grown by molecular-beam epitaxy using aluminum as the donor species. The ZnTe:Al layers show a high structural quality with a narrow x-ray diffraction linewidth (24 arcsec) and a high carrier concentration up to n=4×1018 cm−3 with low resistivity (ρ=0.017 Ω cm). The dependence of the electron mobility on the carrier concentration suggests that the dominant scattering mechanisms in the ZnTe:Al layers are ionized impurity scattering and polar optical phonon scattering. The photoluminescence spectrum of moderately doped ZnTe layers shows strong Al–donor-related bound exciton lines: I2 (2.378 eV) and donor–acceptor pair emission (zero phonon energy=2.324 eV) with a weak deep-level emission (2.19 eV). Highly Al-doped layers show an increase in the deep-level emission intensity and a decrease in carrier mobility, which are interpreted in terms of the increase in the carrier compensation. © 2001 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.1390481
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