Electronic Resource
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
77 (2000), S. 82-84
ISSN:
1077-3118
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We report the origin of hexagonal-shaped etch pits generally observed by conventional wet etching processes on (0001) GaN-based films based on the investigation with transmission electron microscopy on GaN films after being etched with molten KOH. The origin of hexagonal-shaped etch pits is identified as nanopipes through careful characterization of abnormal contrast of nanopipe (open-core screw dislocation), "lobe contrast" of end-on edge and screw (full-core) dislocations, visible and invisible conditions of edge and screw dislocations. Consideration of energetics of these defects also suggests preferential etch pit formation at nanopipes because of much higher energy. © 2000 American Institute of Physics.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.126884
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