Digitale Medien
Woodbury, NY
:
American Institute of Physics (AIP)
Applied Physics Letters
71 (1997), S. 3236-3238
ISSN:
1077-3118
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Dielectric polarization noise in silicon p-n junctions was measured at low leakage current, less than 1×10−17 A, and at temperatures between 110 and 200 K. The power spectra of the noise voltages exhibit 1/f characteristics, where f is the frequency. The dielectric loss of the p-n junctions, which was derived from the 1/f noise by using the fluctuation-dissipation theorem, is proportional to the temperature, and is almost independent of the characteristics of the p-n junctions. © 1997 American Institute of Physics.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.120301
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